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Method and device for testing contact resistance

A technology of contact resistance and testing method, which is applied in the direction of measuring device, measuring resistance/reactance/impedance, measuring electrical variables, etc. It can solve the problems of contact resistance change and the influence of MOS transistor test accuracy, so as to eliminate the influence and improve the measurement accuracy degree of effect

Pending Publication Date: 2022-05-10
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
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  • Claims
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Problems solved by technology

However, in the actual test process, since the resistance value of the contact resistance will change with the change of the ambient temperature, it is difficult to maintain a fixed value, so it will have a great impact on the test accuracy of the entire MOS transistor

Method used

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  • Method and device for testing contact resistance
  • Method and device for testing contact resistance
  • Method and device for testing contact resistance

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Embodiment Construction

[0061] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0062] In the existing integrated circuit manufacturing, with the continuous improvement of semiconductor integrated circuit technology and the continuous reduction of feature size, the number of devices on a single wafer has been continuously increased, and the function of the circuit has been improved. The link requirements in the process are becoming more ...

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Abstract

The invention provides a method and a device for testing contact resistance. The method and the device are used for testing the contact resistance of an MOS (Metal Oxide Semiconductor) transistor. The method comprises the following steps: acquiring a unit area resistance value and a resistance temperature coefficient of a contact resistor, and determining a target resistance value of the contact resistor according to the unit area resistance value, the resistance temperature coefficient and the area of the contact resistor. According to the contact resistance test method provided by the embodiment of the invention, the measurement result of the contact resistance can be corrected according to the resistance temperature coefficient of the contact resistance in the test process, the influence of the environment temperature on the measurement result of the contact resistance can be effectively eliminated, and the measurement accuracy of the MOS transistor is further improved.

Description

technical field [0001] The embodiments of the present application relate to the technical field of semiconductors, and in particular to a method and device for testing contact resistance. Background technique [0002] Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET for short), also known as MOS transistor, is the most basic component in the manufacturing process of semiconductor devices and has been widely used in various integrated circuits. [0003] During the manufacturing process of the MOS transistor, it is usually necessary to test the reliability of the MOS transistor, for example, to test the contact resistance thereof. However, in the actual test process, since the resistance value of the contact resistance will change with the change of the ambient temperature, it is difficult to keep it at a fixed value, so it will have a great impact on the test accuracy of the entire MOS transistor. Contents of the invention [0004] Embodiments of the present appli...

Claims

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Application Information

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IPC IPC(8): G01R27/02
CPCG01R27/02
Inventor 杨海洋
Owner CHANGXIN MEMORY TECH INC
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