Semiconductor structure, preparation method and application

Abstract

The invention provides a semiconductor structure and a preparation method and application thereof, and the preparation method at least comprises the following steps: providing a substrate; forming a semiconductor epitaxial layer on the substrate, wherein the semiconductor epitaxial layer comprises a first type semiconductor layer, a quantum well layer and a second type semiconductor layer which are arranged in sequence; introducing a first type of gas, and etching the second type of semiconductor layer on one side of the semiconductor epitaxial layer, the quantum well layer and the first type of semiconductor layer with a preset thickness; introducing a second type of gas, and etching and repairing the etched first type of semiconductor layer to form a repairing layer; forming a first electrode on the repairing layer; and forming a second electrode on the second type semiconductor layer. According to the semiconductor structure, the preparation method and the application provided by the invention, the problem of difficulty in ohmic contact of the electrodes of the semiconductor structure can be effectively improved.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a semiconductor structure, preparation method and application. Background technique [0002] In recent years, due to the great advantages of high-aluminum component AlGaN-based semiconductor devices in terms of energy saving, environmental protection, and portability, as well as important applications in sterilization and safe communication, especially for the inactivation of new coronaviruses, high-aluminum components Research on AlGaN-based diodes and transistors has attracted much attention. However, AlGaN with high aluminum composition has a larger band gap and higher electron affinity, and it is difficult to achieve high-quality ohmic contacts, which limits the device performance. Furthermore, as the aluminum content in AlGaN increases, the contact problem becomes more difficult due to the lower carrier concentration in the conductive layer. [0003] ...

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Problems solved by technology

However, plasma etching can cause various forms of damage to nitride materials, resulting in changes in the electrical properties of the material

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