Preparation method of mesa-type infrared detector indium dot matrix, infrared detector, focal plane array chip and readout circuit chip

Abstract

The invention provides a mesa type infrared detector indium dot matrix preparation method, an infrared detector, a focal plane array chip and a readout circuit chip, and aims to overcome the defects that a common electrode of a mesa type infrared detector in the prior art is prone to breakage in the climbing process, and a UBM film layer is poor in component certainty, thin in film layer and poor in reliability. According to the manufacturing method, a chip substrate is provided with a table board with the height of h3, the top of the table board is a pixel electrode area, a common electrode area is arranged below the table board, a pixel electrode and a common electrode are manufactured in the pixel electrode area and the common electrode area respectively, and the table board type infrared detector comprises a focal plane array chip and a reading circuit chip. The electrodes on the focal plane array chip and the readout circuit chip are connected through the indium dot matrixes on the corresponding pixel electrode and the public electrode in a pressure welding mode, and by the adoption of the preparation method of the mesa-type infrared detector indium dot matrix, the infrared detector, the focal plane array chip and the readout circuit chip, the electrodes are not prone to being damaged and broken, and the production efficiency is improved. And the connection is more reliable.

Description

technical field [0001] The invention relates to the technical field of infrared detectors, in particular to a method for preparing an indium lattice of a mesa-type infrared detector, an infrared detector, a focal plane array chip and a readout circuit chip. Background technique [0002] Usually, the focal plane array chip and the readout circuit chip of the cooled infrared detector are electrically conducted and mechanically connected through a flip-chip interconnection process. The flip-chip interconnection process is to prepare indium lattices on the focal plane array chip and the readout circuit chip respectively, and connect the corresponding pixel electrodes of the two chips to the indium lattices on the common electrode by pressure welding, or only in the focal plane array chip. An indium lattice is arranged on the planar array chip or the readout circuit chip, and then the two are pressure-welded and interconnected through the indium lattice. For the table-type infra...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a mesa-type infrared detector indium point for the problems of the common electrode of the mesa-type infrared detector in the prior art that is easy to break during the climbing process, the composition of the UBM film is poor in certainty, and the film is thin and reliable. Fabrication method of array, infrared detector, focal plane array chip and readout circuit chip

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