Device and method for removing particles on surface of electrostatic chuck of etching equipment

An electrostatic chuck and surface particle technology, applied in circuits, discharge tubes, electrical components, etc., can solve the problems of declining product yield, increasing preventive maintenance, and declining production efficiency, reducing downtime and preventive maintenance. , the effect of improving production efficiency

Pending Publication Date: 2022-05-20
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above analysis, the present invention aims to provide a device and method for removing particles on the surface of the electrostatic chuck of etching equipment, to solve the problem of microparticles attached to the surface of the electrostatic chuck in the etching process in the existing semiconductor production equipment, and then Causes the decline of product yield, the increase of preventive maintenance, the increase of downtime, and the decline of production efficiency

Method used

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  • Device and method for removing particles on surface of electrostatic chuck of etching equipment
  • Device and method for removing particles on surface of electrostatic chuck of etching equipment
  • Device and method for removing particles on surface of electrostatic chuck of etching equipment

Examples

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Embodiment 1

[0050] This embodiment relates to a device for removing particles on the surface of an electrostatic chuck of an etching device:

[0051] Such as figure 1 and figure 2 As shown, the device for removing particles on the surface of the electrostatic chuck of the etching equipment includes: a gas supply device, a regulating valve 3 , a main gas supply pipe 4 , a branch gas supply pipe 5 and a nozzle 2 . Wherein the branch gas supply pipe 4 is close to the inner wall 7 of the etching chamber, and connects the main gas supply pipe 5 and the nozzle 2 . The horizontal height of the nozzle 2 is higher than that of the electrostatic chuck 1, the axial height between the nozzle and the upper surface of the electrostatic chuck is 2 cm, and the angle between the nozzle 2 and the horizontal plane is 15 degrees; the regulating valve 3 is composed of a swing valve for starting and Stop purging, and it can also be used to adjust the flow of gas; the gas supply device is a gas cylinder, and...

Embodiment 2

[0057] This embodiment relates to a device for removing particles on the surface of an electrostatic chuck of an etching device:

[0058] Such as image 3 As shown, the device for removing particles on the surface of the electrostatic chuck of the etching equipment includes: a gas supply device, a regulating valve 3 , a main gas supply pipe 4 , a branch gas supply pipe 5 and a nozzle 2 . Wherein the branch gas supply pipe 4 is close to the inner wall 7 of the etching chamber, and connects the main gas supply pipe 5 and the nozzle 2 . The horizontal height of the nozzle 2 is slightly higher than that of the electrostatic chuck 1, the axial height between the nozzle and the upper surface of the electrostatic chuck is 3 cm, and the angle between the nozzle 2 and the horizontal plane is 10 degrees; the regulating valve 3 is composed of a butterfly valve for starting and Stop purging, and it can also be used to adjust the flow of gas; the gas supply device is a gas cylinder, and t...

Embodiment 3

[0064] Such as Figure 4 As shown, the device for removing particles on the surface of the electrostatic chuck of the etching equipment includes: a gas supply device, a regulating valve 3, a main gas supply pipe 4, a branch gas supply pipe 5, a nozzle 2 and a control device. Wherein the branch gas supply pipe 4 is close to the inner wall 7 of the etching chamber, and connects the main gas supply pipe 5 and the nozzle 2 . The horizontal height of the nozzle 2 is slightly higher than that of the electrostatic chuck 1, the axial height between the nozzle and the upper surface of the electrostatic chuck is 5 cm, and the angle between the nozzle 2 and the horizontal plane is 10 degrees; the regulating valve 3 is composed of a butterfly valve for starting and Stop purging, and it can also be used to adjust the flow of gas; the gas supply device is a gas cylinder, and the inert gas nitrogen is stored in the cylinder, and the purity of the high-purity inert gas nitrogen supplied is 5N...

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Abstract

The invention relates to a device and a method for removing particles on the surface of an electrostatic chuck of etching equipment, belongs to the field of semiconductor manufacturing equipment, and solves the problems that in existing semiconductor production equipment in the prior art, microparticles are attached to the surface of the electrostatic chuck in the etching process, so that the product yield is lowered, preventive overhaul is increased, downtime is prolonged, and production cost is reduced. And the production efficiency is reduced. The invention discloses a device for removing particles on the surface of an electrostatic chuck of etching equipment. The device comprises a gas supply device, an adjusting valve, a main gas supply pipe, branch gas supply pipes and nozzles. The branch air supply pipes are arranged along the inner wall of the etching cavity and are connected with the main air supply pipe and the nozzles; the nozzles are higher than the upper surface of the electrostatic chuck; the adjusting valve is used for adjusting the gas flow; the gas supply device supplies a purge gas. According to the device and the method, the particles on the surface of the electrostatic chuck of the etching equipment in semiconductor manufacturing equipment are automatically and effectively removed.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing equipment, in particular to a device and method for removing particles on the surface of an electrostatic chuck of etching equipment. Background technique [0002] During the production process of the semiconductor process, some tiny particulate matter often falls on the surface of the wafer. These particulate matter have different shapes, and the characteristic size is generally between micron level and tens of nanometers, and are collectively referred to as microparticles (particle) in the present invention. In the production and manufacture of integrated circuit chips, microparticles are very harmful, so there are strict regulations on the size and quantity of microparticles on each wafer. With the shrinking of the feature size of the device on the integrated circuit chip and the increasing of the integration of the device, the quality control standard is getting higher and higher, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/683H01L21/67
CPCH01J37/32862H01J37/32715H01L21/6831H01L21/67069H01J2237/334
Inventor 金根浩周娜李俊杰李琳王佳
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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