Method for cutting germanium initial wafer

A wafer and cutting fluid technology, applied in sustainable manufacturing/processing, climate sustainability, final product manufacturing, etc., can solve the problems of deep surface damage layer, reduced single crystal utilization rate, increased cost, etc.

Pending Publication Date: 2022-05-24
BEIJING TONGMEI XTAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the applicant found that the surface damage layer depth of the wafer obtained by multi-wire cutting is relatively large, so that the germanium wafer obtained by cutting needs more removal amount in the subsequent surface processing, which reduces the utilization of single crystal. rate, increasing the cost

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example I-1

[0039] An acrylic modified silicon carbide micropowder is prepared by the following method:

[0040] Place 50kg of silicon carbide micropowder in a vacuum drying oven to dry for 30min, then take out the silicon carbide micropowder, add 120kg of toluene to the silicon carbide micropowder, stir until uniformly mixed; then add 65kg of acrylic acid, heat up to 65 ° C, pass nitrogen, Ultrasonic for 30min, filter; then add the filter residue to 60kg of toluene, stir for 3min, filter; add the filter residue to 60kg of toluene, stir for 3min, filter; then add the filter residue to 60kg of toluene, stir for 3min, filter, and dry the filter residue, Acrylic-modified silicon carbide micropowder was obtained, and the graft ratio of the acrylic-modified silicon carbide micropowder was 5%.

preparation example I-2

[0042] An acrylic modified silicon carbide micropowder is prepared by the following method:

[0043] 50kg of silicon carbide micropowder was placed in a vacuum drying oven to dry for 30min, then the silicon carbide micropowder was taken out, and 120kg of toluene was added to the silicon carbide micropowder, stirred until uniformly mixed; 9kg of aminosilane coupling agent was added, and the type of aminosilane coupling agent was For KH-1121, ultrasonic for 20min; then add 65kg acrylic acid, heat up to 65℃, pass nitrogen, ultrasonic for 30min, filter; then add the filter residue to 60kg toluene, stir for 3min, filter; add the filter residue to 60kg toluene, stir 3min, filter; then add the filter residue to 60kg of toluene, stir for 3min, filter, and dry the filter residue to obtain acrylic modified silicon carbide micropowder, and the graft ratio of the acrylic modified silicon carbide micropowder is 15%.

preparation example II-1

[0046] A kind of cutting fluid, it adopts the following method to prepare:

[0047] 10kg is added in 11.7kg polyethylene glycol by the acrylic acid modified silicon carbide micropowder that preparation example 1-1 is prepared, 3kg alumina micropowder is added in 11.7kg polyethylene glycol, is stirred to mixing, ultrasonic 15min obtains cutting fluid, and the viscosity of cutting fluid is 1000mPa. s;

[0048] Wherein, the acrylic-modified silicon carbide micropowder includes 40wt% acrylic-modified silicon carbide micropowder with a particle size of 0.4-0.6 μm and 60wt% acrylic-modified silicon carbide micropowder with a particle size of 2-4 μm;

[0049] The particle size of alumina micropowder is 0.2-10μm continuous gradation.

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PUM

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Abstract

The invention relates to the technical field of wafer cutting, and particularly discloses a method for cutting an initial germanium wafer. The method for cutting the germanium initial wafer comprises the following steps that S1, a germanium crystal bar to be cut is bonded to a material plate of a multi-wire cutting machine; s2, a multi-wire cutting machine is used for cutting the germanium crystal bar, cutting liquid is loaded on a cutting wire in the multi-wire cutting machine, the cutting liquid is formed by mixing solid particles and polyethylene glycol, the solid particles are a mixture of acrylic acid modified silicon carbide micro powder and aluminum oxide micro powder, and the polyethylene glycol is polyethylene glycol; the acrylic acid modified silicon carbide micro-powder is prepared by grafting and modifying acrylic acid on the surface of silicon carbide micro-powder; and S3, the cut germanium cutting initial wafer is placed in a cleaning solution which is alkali liquor of triethylamine and sodium hydroxide, ultrasonic treatment and drying are conducted, the germanium wafer is obtained, and the cleaning solution is alkali liquor of triethylamine and sodium hydroxide. According to the method for cutting the germanium initial wafer, the thickness of a damaged layer of the cut germanium wafer can be remarkably reduced, and the quality of the germanium wafer is improved.

Description

technical field [0001] The present application relates to the technical field of wafer cutting, and more particularly, to a method for cutting a germanium initial wafer. Background technique [0002] Germanium single crystal is an important semiconductor material, which is widely used in solar cells. The germanium single crystal is usually used in solar cells in the form of germanium wafers as substrate sheets. The high-purity polycrystalline germanium is subjected to a single crystal growth technique to obtain a germanium single crystal rod, and the germanium crystal rod needs to be cut to obtain a germanium single crystal. [0003] At present, a single wafer is commonly used in a multi-line dicing method. Multi-wire cutting is a new type of cutting method that uses the high-speed reciprocating motion of metal wires to bring abrasives into the semiconductor processing area for grinding, and simultaneously cuts hard and brittle materials such as semiconductors into hundred...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304H01L21/02
CPCH01L21/304H01L21/02076Y02P70/50
Inventor 王元立洪庆福韩东
Owner BEIJING TONGMEI XTAL TECH CO LTD
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