12 results about "Germanium crystal" patented technology

The application discloses a kind of based on two-dimensional germanium selenide / molybdenum disulfide polarized photoelectric detector and preparation method thereof, belong to the technical field of germanium selenide crystal material.The application discloses a kind of based on two-dimensional germanium selenide / molybdenum disulfide polarized photoelectric detector, adopt two-dimensional germanium selenide as anisotropic two-dimensional semiconductor layer, adopt molybdenum disulfide as two-dimensional semiconductor layer, molybdenum disulfide is main conductive channel, germanium selenide is as top layer photosensitive material, the built-in electric field of the PN junction formed in vertical direction, the separation of photo-generated carrier is enhanced, so as to improve photoelectric detection performance.Using the method of gas phase transmission, germanium selenide crystal is synthesized using germanium powder, selenium powder and crystalline iodine powder as anisotropic two-dimensional semiconductor layer two-dimensional germanium selenide, with the advantages of simple operation steps, low production cost, can be used for industrial production.

To provide a method for industrially advantageously producing a crystal excellent in crystallinity and useful for a semiconductor device, etc.SOLUTION: A method for producing a germanium dioxide crystal by crystal growth using a germanium-containing source material, wherein the source material contains antimony and the antimony content is 0.1 mol% or more and 10 mol% or less based on the source material, and the crystal is produced by heating the source material.SELECTED DRAWING: Figure 1

The application provides a long-wave athermal optical imaging lens, comprising, in sequence from an object side to an image side of a light path, a first lens of a meniscus lens with positive refractive power, a second lens of a double-concave lens with negative refractive power, a third lens of a meniscus lens with positive refractive power, and a fourth lens of a meniscus lens with negative refractive power; wherein the lens material types of the first lens, the second lens, the third lens and the fourth lens are at least three; the lens material comprises sulfide glass, ZnS crystal and germanium crystal. The application eliminates the thermal difference and the chromatic aberration of the optical system through the combination of different lens materials and the surface type design of the aspheric lens, so that the optical imaging lens can clearly image without re-focusing under the condition that the working spectrum is 8-12 mu m and the working temperature is -40 DEG C to 60 DEG C, and is suitable for application in the fields of security and protection, unmanned aerial vehicle, industrial monitoring, temperature measurement, forest fire prevention and the like.

The multi-rotating mirror coaxial composite long-wave infrared monitoring optical system belongs to the technical field of monitoring optics. The prior art is not suitable for long-wave infrared imaging and has a high processing cost. In the present application, a multi-rotating mirror coaxial composite mirror group and a subsequent meniscus lens are arranged along the system optical axis; the multi-rotating mirror coaxial composite mirror group is composed of six mirror surfaces, all of which are rotating around the system optical axis, and the six mirror surfaces along the light-in and light-out path are in turn a convex aspheric light-in refractive mirror surface, a plane primary reflecting mirror surface, a plane secondary reflecting mirror surface, a plane tertiary reflecting mirror surface, a convex aspheric fourth reflecting mirror surface and a convex aspheric light-out refractive mirror surface; the plane tertiary reflecting mirror surface is recessed by a distance d towards the inside of the mirror body relative to the plane primary reflecting mirror surface; the outer dimension of the subsequent meniscus lens matches the recessed distance d and the outer diameter D of the plane tertiary reflecting mirror surface; the subsequent meniscus lens is embedded in the middle of the rear end of the multi-rotating mirror coaxial composite mirror group; and the material of the present application is germanium crystal.

The invention belongs to the technical field of germanium crystal production and processing equipment, and provides a single crystal furnace and a germanium single crystal volatilization hole defect inhibition method, and the single crystal furnace comprises a furnace body with a furnace cover, a crucible, a heating system, a seed rod system, a crucible driving system, a gas control system, a heat sealing assembly, a magnetic field regulation and control system, an electric field regulation and control system and a multi-dimensional monitoring system. The heat sealing assembly is used for blocking or adsorbing germanium volatile matters; and the magnetic field regulation and control system and the electric field regulation and control system act on the crucible. According to the single crystal furnace, the heat sealing assembly capable of being adjusted in the vertical direction is arranged on the basis of a conventional single crystal furnace, the germanium melt volatile matter is blocked or adsorbed and captured while the single crystal growth area is subjected to heat preservation, and pollution of the germanium volatile matter to single crystals is inhibited; meanwhile, aiming at a crucible integrated magnetic field regulation and control system and an electric field regulation and control system, germanium melt convection is inhibited, atom escape is restrained, formation of volatilization holes is effectively inhibited, and the finished product quality of germanium single crystals is improved.

To bond a germanium (Ge) photosensor and a silicon (Si) drive circuit layer. Due to the difference in lattice constant of 4.18% between Ge and Si, positional displacement (dislocation) of Ge and Si atoms occurs at the Ge / Si interface, which causes large dark current noise.SOLUTION: The lattice constants of Ge and Si are 0. 5658nm and 0. 5431nm, respectively. The reason why the number of digits is four is that the lattice constants of Ge reported in recent years are all 0. 5658nm in the range of four significant figures. An insulating layer having a large number of openings is interposed between the Ge layer and the Si layer. When there are 24 Ge atoms and 25 Si atoms between adjacent openings, 24 * 0. 5658nm = 13. 5792nm, 25 * 0. 5431nm = 13. 5775nm. Since the number of significant figures is four, dislocation does not occur if the Ge crystal and the Si crystal are bonded by forming openings in the insulating layer at a pitch of 13. 58nm.SELECTED DRAWING: Figure 12

The present application relates to the technical field of fuel detection, and discloses a reactor core fuel detection device and a working method thereof.The reactor core fuel detection device comprises a first detector, a second detector, a support assembly and a detection assembly.The first detector, the second detector and the detection assembly are connected with the support assembly respectively, and the first detector and the second detector are arranged on the same straight line.The detection assembly is arranged around the first detector, and the gamma ray of the fuel ball is irradiated on the germanium crystal of the first detector through the gap of the support assembly.The second detector and the detection assembly cooperate with the first detector to detect the gamma ray.Through the cooperation of the first detector, the second detector and the detection assembly to detect the reflected, refracted or transmitted gamma ray of the germanium crystal, and through the support and fixation of the support assembly to the first detector, the second detector and the detection assembly, the efficiency of the detected gamma ray is higher, the technical problem of low detection efficiency in the prior art is solved, and the technical effect of high detection efficiency is achieved.

The invention belongs to the technical field of semiconductor material preparation, and discloses a composite crucible for preparing germanium crystals through a casting method and a preparation method and application. The in-situ transition layer and the compact barrier layer are constructed on the inner wall of the high-purity silicon crucible by utilizing the processing advantages of high thermal conductivity, thermal stability and geometric dimension of the high-purity silicon crucible, so that the mutual dissolution reaction of silicon and molten germanium is effectively avoided, the wettability is reduced, and the impurity pollution is reduced. The content of Si in germanium crystals prepared by adopting the composite crucible is lower than 10ppbw, the dislocation density is controlled to be 103-104 cm <-2 >, the crystals have no macroscopic cracks, and the inclusion proportion is smaller than 1%. Compared with a quartz crucible or a silicon crucible without a coating, the crystal prepared by the method is high in purity and few in defect, the yield is remarkably improved, and the method is suitable for industrial preparation of single-crystal and large-size polycrystalline germanium crystals.

The application discloses a kind of germanium crystal dead layer thickness automation photon scanning collimator and measuring method, wherein the germanium crystal dead layer thickness automation photon scanning collimator includes the plexiglass plate being set in the top of lead chamber and being rotatable relative to lead chamber, the pose adjustable measuring component is arranged on the plexiglass plate, the upper surface of lead chamber is provided with the openable and closable lead cover for covering the plexiglass plate and pose adjustable measuring component.The application can realize the measurement of high-purity germanium crystal dead layer thickness, solve the problem that dead layer related parameters cannot be measured.The whole device is easy to process and install, and can realize measurement in multiple directions;The method creatively uses photon scanning method, which can further reduce cost, and the accurate measurement of dead layer can be realized without disassembling the detector to expose high-purity germanium crystal.

The invention discloses a multi-revolution mirror coaxial composite long-wave infrared monitoring optical system, and belongs to the technical field of monitoring optics. The prior art is not suitable for long-wave infrared imaging and is high in processing cost. According to the invention, a multi-revolution mirror surface coaxial composite lens group and a subsequent meniscus lens are arranged along the optical axis of the system; the multi-rotation mirror surface coaxial composite mirror group is composed of six mirror surfaces with a system optical axis as a rotation axis. The six mirror surfaces are a convex aspheric light inlet refracting mirror surface, a planar primary reflecting mirror surface, a planar secondary reflecting mirror surface, a planar tertiary reflecting mirror surface, a convex aspheric quartic reflecting mirror surface and a convex aspheric light outlet refracting mirror surface in sequence along a light inlet path and a light outlet path; the plane three-time reflecting mirror surface retracts for a certain distance d towards the interior of the mirror body relative to the plane one-time reflecting mirror surface; the overall dimension of the subsequent meniscus lens is matched with the indentation distance d and the outer diameter D of the plane tertiary reflection mirror surface; the subsequent meniscus lens is embedded in the middle of the rear end of the lens body of the multi-revolution mirror surface coaxial composite lens group; the device is made of germanium crystals.

The processing method for improving the utilization rate of the high-purity germanium crystal comprises the following steps: S1, respectively carrying out sheet taking and Hall testing on the head part and the tail part of the high-purity germanium crystal obtained by a czochralski method to obtain a purity qualified section; s2, taking wafers from the head part and the tail part with qualified purity, and carrying out dislocation defect and deep-energy-level impurity tests; s3, according to the dislocation defects of the head part and the tail part of the purity qualified section, rounding from the diameter with the qualified dislocation defect of the tail part to the middle part of the purity qualified section, wherein the diameter is not smaller than the minimum diameter of the plane detector; s4, according to the deep-energy-level impurity content of the head and the tail of the purity qualified section, the diameter of the head with the qualified deep-energy-level impurity content is rolled towards the middle part of the purity qualified section from the position where the diameter is not smaller than the minimum diameter of the plane detector; s5, the inverted circular truncated cone of the tail part, the circular truncated cone of the head part and the cylinder between the inverted circular truncated cone of the tail part and the circular truncated cone of the head part are qualified high-purity germanium crystals; and S6, cutting.

The high-purity germanium detector electrode mask tool comprises a base, a mounting sleeve and a sealing module, the mounting sleeve is mounted on the base, a connecting plate at the bottom of the mounting sleeve is connected with the base through a fastening bolt, and the sealing module is mounted at the top of the mounting sleeve; according to the electrode mask tool for the high-purity germanium detector, the high-purity germanium crystal is placed in the mounting sleeve, the high-purity germanium crystal is pushed by the base in the mounting and fixing process of the mounting sleeve and the base, so that the top of the high-purity germanium crystal is tightly attached to the sealing attaching ring, and then the sealing gasket penetrates through the opening in the top of the mounting sleeve through the screw rod; the top of the high-purity germanium crystal is pressed and attached to the top of the high-purity germanium crystal, partial area of the top of the high-purity germanium crystal is sealed under the action of the sealing attaching ring and the sealing gasket, then the tool is placed in etching liquid, and the high-purity germanium crystal can be etched. And the etching effect of the high-purity germanium crystal is enhanced.