59 results about "Germanium crystal" patented technology

A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

The present invention relates to a method for a high purity germanium detector efficiency calibration without a radioactive source. Said method is capable of automatically, quickly and correctly ascentaining a high purity germanium crystal and its sensitive region size, then directly performing a simulation calculation adopting a monte carlo method, and then quickly achieving the high purity germanium detector efficiency calibration without a radioactive source.

The invention relates to radiation measuring technical field, specifically to a germanium crystal size automatic adjustment method with souceless efficiency calibration used in high-purity germanium detector, wherein, a plurality of measuring values of gamma radial omnipotence peak testing efficiency of different Ei energies can be obtained at one testing position, and then the computing valves of all gamma radial omnipotence peak testing efficiency of different Ei can be attained through Monte Carlo analog computation according to the original size of crystal provided by the product instruction of the detector; and error analysis is performed on the efficiency computing value and the measuring value, an efficiency influence formula of the crystal sizes T, R, L on E-energy gamma radial can be calculated under the present crystal sizes through Monte Carlo calculation; a computational efficiency expecting change percentage is set, and an equation group is built to get the size of a new crystal, a final result can be got by repeating the above procedures. The invention can automatically, quickly, accurately determine a high-purity germanium crystal and the size of the sensitive area to effectively ensure the realization of quick Monte Carlo souceless efficiency calibration for high-purity germanium detector.

Devices for improving the capturing and utilization of high-energy electromagnetic radiation, for example, x-rays, gamma rays, and neutrons, for use in physical, medical, and industrial analysis and control applications are disclosed. The devices include optics having a plurality of optical crystals, for example, doubly-curved silicon or germanium crystals, arranged to optimize the capture and redirection of divergent radiation via Bragg diffraction. In one aspect, a plurality of optic crystals having varying atomic diffraction plane orientations are used to capture and focus divergent x-rays upon a target. In another aspect, a two- or three-dimensional matrix of crystals is positioned relative to an x-ray source to capture and focus divergent x-rays in three dimensions.

The invention generally relates to a vertical directional solidification casting method using a crystal selection process, which is used for manufacturing a crystal material with a reserved crystal orientation and comprises a polycrystal material and a monocrystal material. When a traditional method for casting the crystal by using the crystal selection process is used for producing the crystal with a bigger size, the problems that the crystal selection effect is bad, a mixed crystal is easy to generate, the internal stress is high, the monocrystal material is hard to obtain or the expected quality requirement is hard to reach and the like exist. The problems are solved by the invention through providing a gradually-changed crystal growth area of which the horizontal cross section is gradually increased, thereby, a good crystal growth effect is obtained, and the obtained cast monocrystal or polycrystal material, such as silicon or silicon germanium, has fewer defects, high quality and a good performance, and is especially suitable for the application of the semiconductor field and the photovoltaic field.

The invention discloses a method of air-floating mechanical polishing, mainly adaptable on fine grinding and super-smooth surface processing of metal parts, optical glass, germanium crystal, monocrystalline silicon wafer, gemstone, quartz crystal, etc. The method is technically characterized in that a millstone with even air-jet, which is close to the surface of a rotating workpiece on the chassis, together with the workpiece is immersed in polishing solution with certain abrasive inside; the millstone can rotate in the opposite direction to the workpiece, or can stay still; in the polishing process, a layer of air-liquid membrane is naturally formed between the surfaces of the millstone and the workpiece; while the abrasive in the air-liquid membrane flexibly and evenly polish the workpiece. The invention is proved by practical application that the method fundamentally improves and stabilizes the quality of super-smooth surface mechanical polishing of the workpiece, greatly increases the procedure qualification rate and overcomes the shortcoming of the original polishing process that the operators are required to have high technical capability and rich experience.

The invention discloses an automatic equal diameter controlling method for germanium single crystal straight-pull growth method, which includes the following steps: setting the diameter of the germanium crystal required to be prepared, setting the initial lifting speed SL of a crystal rise motor, and establishing a speed control ring, a temperature control ring a and a temperature control ring b. When a diameter measurement value deviates from a diameter set value during the growth process of the germanium single crystal, a diameter deviation e1 is formed between the diameter measurement value and the diameter set value, then the three control rings are matched mutually to automatically adjust lifting speed of the crystal rise motor and the temperature set SP of a temperature controller, so as to enable the diameter measurement value to be equal to the diameter set value. The automatic equal diameter controlling method improves the manual diameter control during the germanium single crystal production into automatic diameter control, improves the production efficiency, reduces the wastes caused by the follow-up polishing, rounding and slicing processes of the single crystal bar.

The invention provides a growth method of a germanium substrate. The growth method comprises the following steps of: providing a supporting substrate, wherein the supporting substrate is a crystal material; epitaxially growing a first germanium crystal layer on the surface of the supporting substrate at a first temperature; and epitaxially growing a second germanium crystal layer on the surface of the first germanium crystal layer at a second temperature, wherein the first temperature is lower than the second temperature. The growth method has the advantages that: a growth process combining low and high-temperature germanium epitaxial growth is provided; firstly, a germanium layer is grown at a low temperature, thus the germanium layer has low epitaxial growth speed, has two-dimensional growth characteristics and is completely relaxed, and the thin low-temperature germanium layer has multiple defects and is easy for stress relaxing and dislocation annihilation; and then, a germanium epitaxial layer is grown at a high temperature, thus the germanium layer has high growth speed, and a single crystal germanium layer which has high crystal quality and is completely relaxed can be obtained.

The invention provides an alloy germanium chinlon filament and a production method thereof. The alloy germanium chinlon filament comprises the following components in percentage by weight: 2-6 percentof nano alloy germanium and 94-98 percent of chinlon 6 slice. The nano alloy germanium comprises a germanium crystal and a titanium crystal, wherein the weight ratio of the germanium crystal and thetitanium crystal is 3:1. Compared with the common chinlon filament fabric, the fabric made of the alloy germanium chinlon filament has the following technical advantages: far infrared ray function: the fabric can keep warm and promote blood circulation; (2) antistatic ability; (3) deodorization: nano alloy germanium is provided with large holes, has higher deodorizing ability and can repeatedly adsorb and decompose odor; (4) good air permeability, refreshing and comfort.

The invention discloses a germanium-doped crystalline silicon solar cell capable of suppressing light attenuation and preparation thereof. The preparation method comprises the following steps of: doping germanium and boron into a polycrystalline silicon raw material, wherein the concentration of the germanium is 1,018-1,021cm<-3>, and the concentration of the boron is 1,015-1,017cm<-3>; growing germanium-doped crystalline silicon under a protection atmosphere; and slicing the obtained crystalline silicon for the preparation of the solar cell, wherein the preparation of the solar cell comprises the flows of: carrying out cleaning and wool making on an obtained silicon wafer; carrying out phosphorous diffusion after wool making; etching and depositing an anti-reflecting film; and finally, preparing an electrode and sintering to obtain the germanium-doped crystalline silicon solar cell. The invention has the advantages of simple method and low cost, realizes the compatibility of the whole solar cell preparation and conventional processes and prepares the germanium-doped crystalline silicon solar cell capable of suppressing light attenuation.

Systems, methods, and substrates for growth of single crystal germanium (Ge) are disclosed. In an exemplary embodiment, a method of growing a single crystal germanium (Ge) crystal is provided. Additionally, the method may comprise charging the first Ge feedstock into a crucible, charging the second Ge feedstock into a container for replenishing the Ge melt material, sealing the crucible and container within the ampoule, Putting the ampoule with the crucible into a crystal growth furnace, and melting the first Ge raw material and the second Ge raw material, and controlling the crystallization temperature gradient of the melt to reproducibly provide single crystal germanium crystals with improved/desired properties ingot.

The present invention is the process of utilizing metal hydride to reduce germanium chloride to prepare near monodisperse nanometer germanium crystal under supersonic reaction condition. The present invention has high energy supersonic water bath to replace high temperature reaction environment to promote the formation of nanometer crystal and the dispersion in the solution, and adopts strongly reductive metal hydride as reductant for preparing near monodisperse nanometer germanium crystal under room temperature condition. Through experiments, the nanometer germanium crystal preparing conditions are optimized. Preparing monodisperse nanometer germanium crystal is significant in research of the relationship between the performance and the size of nanometer material and is valuable in the design and manufacture of semiconductor devices.

A laser device for emitting waves in a frequency range belonging to the terahertz range, includes the following, in combination: a wave guide extending longitudinally along an axis A-A′; a superconducting coil arranged coaxially to the wave guide and arranged at a first end of the wave guide; a p-Ge p-doped germanium crystal arranged inside the coil such that the turns of the superconducting coil at least partially surround the p-Ge crystal; a cooling device containing a coolant, the superconducting coil and the p-Ge crystal being arranged in the cooling device, and the wave guide partially extending outside the cooling device; and removing the coolant from the wave guide.

The invention relates to a polishing solution for chemically mechanically polishing germanium crystal and an application method. The polishing solution comprises a rough polishing solution and a fine polishing solution, wherein the rough polishing solution is mainly prepared from the following raw materials in percentage by weight: 10 to 50% of hydrosol grinding material, 0.2 to 1.5% of an oxidant, 0.5 to 2% of a pH conditioner, 0.2 to 1.5% of a chelating agent, and 0.1 to 1% of a surface active agent, wherein the hydrosol grinding material is 15 to 110nm in particle size and has the concentration being not less than 40wt% (percentage by weight) and hardness being not greater than 7 Mohs; the fine polishing solution is mainly prepared from 0.1 to 0.5% of a surface active agent, and the balance of deionized water. The two-step polishing method is performed for chemical mechanical polishing and comprises two steps of selecting the rough polishing solution and then second the fine polishing solution; the two polishing can be performed through one polishing machine. The polishing solution has the beneficial effect that the problems of low rate, high roughness and pollution of metal ions and particles in chemical mechanical polishing of germanium crystal materials can be solved.

A portable radiation detector using a high-purity germanium crystal as the sensing device. The crystal is fabricated such that it exhibits a length to width ratio greater than 1:1 and is oriented within the detector to receive radiation along the width of said crystal. The crystal is located within a container pressurized with ultra-pure nitrogen, and the container is located within a cryostat under vacuum.

The invention provides a method for removing fluorine from a germanium-containing material. The germanium-containing material is calcined under the microwave condition and is subjected to air pumping.The germanium-containing material is calcined by microwave, the inside and the outside of the germanium-containing material are heated simultaneously by microwave, so that the inside and the outsideof the germanium-containing material are heated uniformly and transformation of germanium crystal form is avoided; meanwhile, fluorine elements distributed in the germanium-containing material are decomposed and volatized uniformly, and the fluorine content of the germanium-containing material after calcination is reduced to be below 0.5 percent.

In accordance with the present invention, taught is a high purity germanium crystal growth method utilizing a quartz shield inside a steel furnace. The quartz shield is adapted for not only guiding the flow of an inert gas but also preventing the germanium melt from contamination by insulation materials, graphite crucible, induction coil and stainless steel chamber. A load cell provides automatic control of crystal diameter and helps to ensure exhaustion of the germanium melt. The method is both convenient and effective at producing high purity germanium crystals by relatively low skilled operators.

Systems and methods are disclosed for crystal growth including features of reducing micropit cavity density in grown germanium crystals. In one exemplary implementation, there is provided a method of inserting an ampoule with raw material into a furnace having a heating source, growing a crystal using a vertical growth process wherein movement of a crystallizing temperature gradient relative to the raw material/crucible is achieved to melt the raw material, and growing, at a predetermined crystal growth length, the material to achieve a monocrystalline crystal, wherein monocrystalline ingots having reduced micro-pit densities are reproducibly provided.

The invention provides a polishing solution for germanium crystals. The polishing solution is mainly prepared from the following raw materials in percentage by weight: 20-80% of a polishing agent; 10%-50% of an organic solvent; 1%-30% of a pH value regulator; and the balance of deionized water. The invention also provides a preparation method of the polishing solution for the germanium crystal. The preparation method comprises the following steps: step 1, adding deionized water into the polishing agent, and adding an organic solvent under a stirring condition; and 2, adding the pH additive into the solution obtained in the step 1, and uniformly stirring to obtain the polishing solution. The polishing solution for the germanium crystal does not contain an oxidizing agent, does not contain heavy metal ions and has no pollution to the environment. The polished wafer has low roughness and is not easy to scratch, and the chemical reagent of the polishing solution is simple and is an ideal polishing solution material.

The invention discloses a preparation method for growing a germanium sulfide single crystal film on a SiO2 substrate. The method comprises the following steps: cleaning the surface of the substrate by using acetone, ethanol and deionized water, wherein the substrate material is a Si/SiO2 substrate or a SiO2 glass substrate; carrying out photoetching on the substrate, spin-coating photoresist, and after photoetching is carried out, obtaining a groove pattern through dry etching or wet etching; depositing a layer of germanium crystal in the groove pattern of the substrate to obtain a processed substrate; and placing the processed substrate in chemical vapor deposition equipment for growth, taking high-purity sulfur powder and high-purity germanium powder as growth sources, and then preparing the germanium sulfide single crystal thin film on the SiO2 substrate. The preparation method provided by the invention is simple to operate, the monocrystal germanium sulfide GeS2 can be grown on the SiO2 substrate, and the monocrystal germanium sulfide crystal is high in quality and small in surface roughness and has a forbidden band width corresponding to blue-violet light of a visible light band.

The invention discloses an optical athermalization, high-pixel, high-illumination and low-cost heat imaging system. The optical athermalization, high-pixel, high-illumination and low-cost heat imaging system is sequentially provided with a first lens, a diaphragm, a second lens, a third lens and a light sensing chip from an object side to an image side, wherein the first lens, the second lens and the third lens are chalcogenide glass non-spherical surface lenses; focal distances of the first lens and the third lens are positive; and the focal distance of the second lens is negative. According to the optical athermalization, high-pixel, high-illumination and low-cost heat imaging system, low-price chalcogenide glass is adopted and the material can be molded by die pressing, so that the processing cost can be reduced; the thermal refractive index coefficient of the chalcogenide glass is only 1/10 of a germanium crystal material, so that the change of the resolving power of a system composed of the chalcogenide glass lenses along with temperature is relatively small, and stable resolving power and no focus shift can be realized through optical athermalization; and meanwhile, the complexity of the structure is reduced and the cost is reduced. The lens is designed by adopting wide spectrums with the lengths of 7.5 microns to 14 microns at the ratio of 1 to 1 to 1 to 1, and has extremely good image sharpness at a far-infrared band; and a whole picture can be clearly imaged.

The invention relates to polishing liquid for germanium crystal chemical and mechanical polishing and a use method thereof. The polishing liquid comprises coarse polishing liquid and fine polishing liquid, wherein the coarse polishing liquid is mainly prepared from the following raw materials in percentage by weight: 10 to 50 percent of SiO2 hydrosol abrasive grinding materials with the grinding material particle diameter being 15 to 110nm, the concentration being higher than or equal to 40 weight percent and the hardness being smaller than or equal to 7Mohs, 0.2 to 1.5 percent of oxidizing agents, 0.5 to 2 percent of pH regulating agents, 0.2 to 1.5 percent of chelating agents and 0.1 to 1 percent of surfactants; the fine polishing liquid is mainly prepared from 0.1 to 0.5 percent of surfactants and the balance deionized water. A two-step polishing method is used for chemical mechanical polishing; coarse polishing liquid is selected in the first step; the fine polishing liquid is selected in the second step; the two steps of polishing are completed on the same polishing machine. The polishing liquid has the beneficial effects that the problems of low speed, high roughness, metal ion and particle staining and the like of the germanium crystal materials in the chemical and mechanical polishing process can be solved.