28 results about "Germanium crystal" patented technology

The utility model discloses a temperature gradient regulation and control device for large-size germanium single crystal growth, and belongs to the technical field of germanium crystal growth. The device comprises a furnace body, a guide cylinder, a heat preservation cylinder, a ventilation ring and a graphite crucible, the furnace body comprises a main chamber and an auxiliary chamber, and the auxiliary chamber is arranged at the top of the main chamber; the ventilation ring is a tubular metal circular ring, the circular ring is hollow, the inner diameter of the circular ring is larger than the equal diameter of growing germanium single crystals, a plurality of air outlets are evenly formed in the inner wall and the outer wall of the circular ring, an air inlet is formed in the top face of the circular ring, and the ventilation ring is installed on the upper portion of the inner side of the guide cylinder and tightly attached to the guide cylinder or installed on the upper portion of the outer side of the guide cylinder and tightly attached to the guide cylinder. Low-temperature protective gas is blown to the flow guide cylinder through the ventilation ring, so that the temperature of the flow guide cylinder is reduced, the low-temperature flow guide cylinder serves as a cold end, crystallization latent heat, especially crystallization latent heat in the shouldering stage, transmission of crystallization latent heat radiation during shouldering is accelerated, the shouldering probability of growing large-size germanium single crystals is increased, and the purpose that the large-size germanium single crystals enter the equal-diameter stage through shouldering is smoothly achieved.

The invention discloses a vacuum adsorption large-size spherical curved crystal monochromator and a preparation method thereof. The crystal diffraction unit comprises a polycarbonate sheet and a plurality of stripes obtained by cutting the crystal diffraction unit, all the strips are bonded to the polycarbonate sheet and cured, and a combined body is obtained; taking the surface with the strip as the upper surface of the assembly; the lower surface of the assembly is placed on the concave spherical surface of a porous ceramic plate, gas between the lower surface of the assembly and the concave spherical surface of the porous ceramic plate is removed through vacuum adsorption, and the assembly is bent to obtain the spherical curved crystal monochromator. According to the invention, the problem of non-uniform stress of the crystal in the bending process is solved, and the problems that the wafer is easy to break and generates microcracks when the germanium crystal is bent to the curvature radius of less than or equal to 0.5 m are avoided; and meanwhile, the problem that vacuum sealing is not easy due to large curvature is solved.

An integrated circuit transistor structure is disclosed that reduces n-type dopant diffusion, such as phosphorus or arsenic, from the source and drain regions of a germanium n-MOS device into adjacent shallow trench isolation (STI) regions during fabrication. The n-MOS transistor device may include at least 75% germanium by atomic percentage. In an example embodiment, the structure includes an intermediate diffusion barrier deposited between the n-MOS transistor and the STI region to provide dopant diffusion reduction. In some embodiments, the diffusion barrier may include silicon dioxide having a carbon concentration between 5% and 50% by atomic percentage. In some embodiments, the diffusion barrier layer may be deposited using chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) techniques to achieve a diffusion barrier layer thickness in the 1-5 nanometer range.

The application discloses a kind of based on two-dimensional germanium selenide / molybdenum disulfide polarized photoelectric detector and preparation method thereof, belong to the technical field of germanium selenide crystal material.The application discloses a kind of based on two-dimensional germanium selenide / molybdenum disulfide polarized photoelectric detector, adopt two-dimensional germanium selenide as anisotropic two-dimensional semiconductor layer, adopt molybdenum disulfide as two-dimensional semiconductor layer, molybdenum disulfide is main conductive channel, germanium selenide is as top layer photosensitive material, the built-in electric field of the PN junction formed in vertical direction, the separation of photo-generated carrier is enhanced, so as to improve photoelectric detection performance.Using the method of gas phase transmission, germanium selenide crystal is synthesized using germanium powder, selenium powder and crystalline iodine powder as anisotropic two-dimensional semiconductor layer two-dimensional germanium selenide, with the advantages of simple operation steps, low production cost, can be used for industrial production.

To provide a method for industrially advantageously producing a crystal excellent in crystallinity and useful for a semiconductor device, etc.SOLUTION: A method for producing a germanium dioxide crystal by crystal growth using a germanium-containing source material, wherein the source material contains antimony and the antimony content is 0.1 mol% or more and 10 mol% or less based on the source material, and the crystal is produced by heating the source material.SELECTED DRAWING: Figure 1

The application provides a long-wave athermal optical imaging lens, comprising, in sequence from an object side to an image side of a light path, a first lens of a meniscus lens with positive refractive power, a second lens of a double-concave lens with negative refractive power, a third lens of a meniscus lens with positive refractive power, and a fourth lens of a meniscus lens with negative refractive power; wherein the lens material types of the first lens, the second lens, the third lens and the fourth lens are at least three; the lens material comprises sulfide glass, ZnS crystal and germanium crystal. The application eliminates the thermal difference and the chromatic aberration of the optical system through the combination of different lens materials and the surface type design of the aspheric lens, so that the optical imaging lens can clearly image without re-focusing under the condition that the working spectrum is 8-12 mu m and the working temperature is -40 DEG C to 60 DEG C, and is suitable for application in the fields of security and protection, unmanned aerial vehicle, industrial monitoring, temperature measurement, forest fire prevention and the like.

The invention provides a preparation method and application of a one-dimensional germanium triphosphide nanowire, and belongs to the technical field of preparation of germanium triphosphide. The one-dimensional germanium triphosphide crystal is prepared by adopting an electrochemical method, which is the first preparation of the material in a one-dimensional form. The one-dimensional germanium triphosphide nanowire is obtained by taking the germanium triphosphide polycrystalline block as a raw material and performing electrochemical preparation on the germanium triphosphide polycrystalline block by adopting an electrochemical dissociation-preparation technology, a brand new thought is provided for preparation of a low-dimensional material, and compared with a traditional preparation method of a one-dimensional material, the preparation method has the advantages of low energy consumption, less time consumption, low cost and easiness in operation. The one-dimensional germanium triphosphide nanowire prepared by the preparation method disclosed by the invention has the advantages of good conductivity, large specific surface area, high ion diffusion rate and the like as an electrode material, has huge application potential and wide development prospect as the electrode material of an energy storage device, and meanwhile, has good mechanical flexibility and can be applied to the field of energy storage devices. Therefore, the material has the potential of serving as an electrode material of novel energy storage devices such as flexible wearable devices and the like.

The multi-rotating mirror coaxial composite long-wave infrared monitoring optical system belongs to the technical field of monitoring optics. The prior art is not suitable for long-wave infrared imaging and has a high processing cost. In the present application, a multi-rotating mirror coaxial composite mirror group and a subsequent meniscus lens are arranged along the system optical axis; the multi-rotating mirror coaxial composite mirror group is composed of six mirror surfaces, all of which are rotating around the system optical axis, and the six mirror surfaces along the light-in and light-out path are in turn a convex aspheric light-in refractive mirror surface, a plane primary reflecting mirror surface, a plane secondary reflecting mirror surface, a plane tertiary reflecting mirror surface, a convex aspheric fourth reflecting mirror surface and a convex aspheric light-out refractive mirror surface; the plane tertiary reflecting mirror surface is recessed by a distance d towards the inside of the mirror body relative to the plane primary reflecting mirror surface; the outer dimension of the subsequent meniscus lens matches the recessed distance d and the outer diameter D of the plane tertiary reflecting mirror surface; the subsequent meniscus lens is embedded in the middle of the rear end of the multi-rotating mirror coaxial composite mirror group; and the material of the present application is germanium crystal.

The invention belongs to the technical field of germanium crystal production and processing equipment, and provides a single crystal furnace and a germanium single crystal volatilization hole defect inhibition method, and the single crystal furnace comprises a furnace body with a furnace cover, a crucible, a heating system, a seed rod system, a crucible driving system, a gas control system, a heat sealing assembly, a magnetic field regulation and control system, an electric field regulation and control system and a multi-dimensional monitoring system. The heat sealing assembly is used for blocking or adsorbing germanium volatile matters; and the magnetic field regulation and control system and the electric field regulation and control system act on the crucible. According to the single crystal furnace, the heat sealing assembly capable of being adjusted in the vertical direction is arranged on the basis of a conventional single crystal furnace, the germanium melt volatile matter is blocked or adsorbed and captured while the single crystal growth area is subjected to heat preservation, and pollution of the germanium volatile matter to single crystals is inhibited; meanwhile, aiming at a crucible integrated magnetic field regulation and control system and an electric field regulation and control system, germanium melt convection is inhibited, atom escape is restrained, formation of volatilization holes is effectively inhibited, and the finished product quality of germanium single crystals is improved.

The invention provides high-purity germanium crystal pulling growth equipment and a high-purity germanium crystal pulling growth method. The high-purity germanium crystal pulling growth equipment comprises a furnace body, an inner quartz crucible, an outer graphite crucible, a heater, a pulling rod, a seed crystal and a direct-current power supply, the inner quartz crucible and the outer graphite crucible are arranged in the furnace body, the inner quartz crucible is fixed in the outer graphite crucible, the inner quartz crucible and the outer graphite crucible are spaced in the vertical direction and the circumferential direction, and the inner quartz crucible is used for containing germanium ingots; the heater is used for heating the germanium ingot to form a melt; the lifting rod is arranged on the furnace body, can ascend, descend and rotate and can conduct electricity. The seed crystal is mounted at the tail end of the lifting rod; the negative electrode end and the positive electrode end of the direct-current power supply are electrically connected to the lifting rod and the outer graphite crucible respectively, and the direct-current power supply is used for applying potential in the process that the seed crystal is lifted from the melt of the inner quartz crucible along with lifting of the lifting rod to grow the high-purity germanium crystal. The pulling growth method of the high-purity germanium crystal adopts the pulling growth equipment of the high-purity germanium crystal.

The application provides a germanium crystal processing method and device, and relates to the field of semiconductor detectors.The germanium crystal processing method comprises the following steps: cutting from a milling surface of a germanium crystal by using a first cutter and a grinding slurry to form a cutting surface, wherein the grinding slurry comprises grinding powder and a liquid carrier, the first cutter is embedded with a plurality of first abrasive grains, and the first abrasive grains can drive the grinding powder in the grinding slurry to cut the milling surface of the germanium crystal in a rotating cutting state of the first cutter; and polishing the cutting surface by using a second cutter and a polishing slurry, wherein the powder particle concentration in the grinding slurry is greater than the powder particle concentration in the polishing slurry; and the problems of insufficient processing efficiency and processing precision of the surface of the existing high-purity germanium crystal are solved.

To bond a germanium (Ge) photosensor and a silicon (Si) drive circuit layer. Due to the difference in lattice constant of 4.18% between Ge and Si, positional displacement (dislocation) of Ge and Si atoms occurs at the Ge / Si interface, which causes large dark current noise.SOLUTION: The lattice constants of Ge and Si are 0. 5658nm and 0. 5431nm, respectively. The reason why the number of digits is four is that the lattice constants of Ge reported in recent years are all 0. 5658nm in the range of four significant figures. An insulating layer having a large number of openings is interposed between the Ge layer and the Si layer. When there are 24 Ge atoms and 25 Si atoms between adjacent openings, 24 * 0. 5658nm = 13. 5792nm, 25 * 0. 5431nm = 13. 5775nm. Since the number of significant figures is four, dislocation does not occur if the Ge crystal and the Si crystal are bonded by forming openings in the insulating layer at a pitch of 13. 58nm.SELECTED DRAWING: Figure 12

The utility model relates to the technical field of germanium crystal production, and provides a germanium crystal growth equipment composite speed reducer device which comprises a growth furnace, clamping grooves are symmetrically formed in the outer wall of the growth furnace, a cover ring is movably inserted into the inner sides of the clamping grooves and located above the growth furnace, a first supporting plate is fixed to the edge of the top face of the cover ring, and a second supporting plate is fixed to the edge of the top face of the cover ring. A first transverse plate is fixed to the top end of the first supporting plate, an electric push rod is fixed to the edge of the bottom face of the first transverse plate, a top cover is fixed to the lower end of the electric push rod and located above the cover ring, a notch is formed in the outer wall of the top cover, and the first supporting plate penetrates through the notch. The motor drives the third gear to rotate, the third gear drives the second gear to rotate, and the second gear drives the first gear to rotate, so that the rotating rod rotates, the sizes of the third gear, the second gear and the first gear are gradually increased, the speed is gradually reduced, and the problem that the rotating speed of the rotating rod is too high can be effectively prevented; and the crystal growth quality is ensured.

The present application relates to the technical field of fuel detection, and discloses a reactor core fuel detection device and a working method thereof.The reactor core fuel detection device comprises a first detector, a second detector, a support assembly and a detection assembly.The first detector, the second detector and the detection assembly are connected with the support assembly respectively, and the first detector and the second detector are arranged on the same straight line.The detection assembly is arranged around the first detector, and the gamma ray of the fuel ball is irradiated on the germanium crystal of the first detector through the gap of the support assembly.The second detector and the detection assembly cooperate with the first detector to detect the gamma ray.Through the cooperation of the first detector, the second detector and the detection assembly to detect the reflected, refracted or transmitted gamma ray of the germanium crystal, and through the support and fixation of the support assembly to the first detector, the second detector and the detection assembly, the efficiency of the detected gamma ray is higher, the technical problem of low detection efficiency in the prior art is solved, and the technical effect of high detection efficiency is achieved.

The invention belongs to the technical field of semiconductor material preparation, and discloses a composite crucible for preparing germanium crystals through a casting method and a preparation method and application. The in-situ transition layer and the compact barrier layer are constructed on the inner wall of the high-purity silicon crucible by utilizing the processing advantages of high thermal conductivity, thermal stability and geometric dimension of the high-purity silicon crucible, so that the mutual dissolution reaction of silicon and molten germanium is effectively avoided, the wettability is reduced, and the impurity pollution is reduced. The content of Si in germanium crystals prepared by adopting the composite crucible is lower than 10ppbw, the dislocation density is controlled to be 103-104 cm <-2 >, the crystals have no macroscopic cracks, and the inclusion proportion is smaller than 1%. Compared with a quartz crucible or a silicon crucible without a coating, the crystal prepared by the method is high in purity and few in defect, the yield is remarkably improved, and the method is suitable for industrial preparation of single-crystal and large-size polycrystalline germanium crystals.

The present disclosure provides a multi-electrode high-purity germanium detector, comprising: a planar high-purity germanium crystal having an exposed intrinsic layer surface; a lithium diffusion electrode layer formed by diffusing lithium ions on one end face of the planar high-purity germanium crystal and a portion of the side surface connected to the end face, for achieving a stable connection between the planar high-purity germanium crystal and a crystal mechanical fixture; an amorphous barrier layer located on the other end face of the planar high-purity germanium crystal; a guard ring located on the amorphous barrier layer; and a plurality of independent electrodes spaced apart and located within the guard rings. The multi-electrode high-purity germanium detector provided by the present disclosure, by using both amorphous coating and lithium diffusion layer processes, simplifies electrode fabrication, improves yield, reduces dead zone range, reduces assembly and maintenance difficulty, and improves detector reliability.

A preparation method for growing a germanium sulfide (GeS2) single-crystal thin film on a SiO2 substrate includes: cleaning a surface of a substrate with acetone, ethanol and deionized water, where the substrate is a Si / SiO2 substrate or a SiO2 glass substrate; photoetching the substrate, spin-coating a photoresist, and performing photoetching and dry etching or wet etching to obtain a groove pattern; depositing a germanium (Ge)-crystal layer in the groove pattern of the substrate to obtain a treated substrate; and putting the treated substrate into a chemical vapor deposition (CVD) device for growth, a growth source being high-purity sulfur (S) powder and high-purity Ge powder, thereby obtaining a GeS2 single-crystal thin film on the SiO2 substrate. The preparation method can grow GeS2 single crystals on the SiO2 substrate. The GeS2 single crystals have a high crystalline quality and a small surface roughness.

An integrated circuit transistor structure is disclosed that reduces diffusion of n-type dopants, such as phosphorus or arsenic, from source and drain regions of a germanium n-MOS device into adjacent shallow trench isolation (STI) regions during fabrication. The n-MOS transistor device may include at least 75 atomic percent germanium. In an example embodiment, the STI is doped with n-type impurities in regions of the STI adjacent to the source and / or drain regions to provide dopant diffusion reduction. In some embodiments, the STI regions are doped with n-type impurities including phosphorus at a concentration between 1 atomic percent and 10 atomic percent. In some embodiments, the doped STI regions may have a thickness ranging from 10 to 100 nanometers.

The invention provides a germanium crystal machining method and device, and relates to the field of semiconductor detectors, the germanium crystal machining method comprises the steps that a first cutter and grinding slurry are used for cutting a milling surface of a germanium crystal to form a cutting surface, the grinding slurry comprises grinding powder and a liquid carrier, a plurality of first abrasive particles are embedded in the first cutter, and the first abrasive particles are arranged on the first cutter; under the rotary cutting state of the first cutter, the first abrasive particles can drive the grinding powder in the grinding slurry to cut the milling surface of the germanium crystal; the second cutter and the polishing slurry are used for polishing the cutting face, and the concentration of powder particles in the grinding slurry is larger than that of powder particles in the polishing slurry; the problem that an existing high-purity germanium crystal surface is insufficient in machining efficiency and machining precision is solved.

The application discloses a kind of germanium crystal dead layer thickness automation photon scanning collimator and measuring method, wherein the germanium crystal dead layer thickness automation photon scanning collimator includes the plexiglass plate being set in the top of lead chamber and being rotatable relative to lead chamber, the pose adjustable measuring component is arranged on the plexiglass plate, the upper surface of lead chamber is provided with the openable and closable lead cover for covering the plexiglass plate and pose adjustable measuring component.The application can realize the measurement of high-purity germanium crystal dead layer thickness, solve the problem that dead layer related parameters cannot be measured.The whole device is easy to process and install, and can realize measurement in multiple directions;The method creatively uses photon scanning method, which can further reduce cost, and the accurate measurement of dead layer can be realized without disassembling the detector to expose high-purity germanium crystal.

The invention provides a germanium crystal pulling growth device and method. The germanium crystal pulling growth device comprises a furnace body, a graphite crucible and a heater, the graphite crucible is arranged in the furnace body, and the graphite crucible is used for containing melt formed by germanium ingots; the heater is used for heating the graphite crucible so that the germanium ingot in the graphite crucible can form melt. The part, close to the top, of the whole circumference of the inner circumferential wall of the graphite crucible is a downward arc surface which is concave outwards in the radial direction; the germanium crystal lifting growth device further comprises a scum removing mechanism; and the scum removing mechanism is used for driving the scum of the melt in the graphite crucible from the liquid level of the melt in the graphite crucible to the arc surface of the graphite crucible and adhering the scum to the arc surface of the graphite crucible by utilizing airflow of non-oxidizing gas after the liquid level of the melt rises to the bottom edge of the arc surface of the graphite crucible before the lifting crystal grows. Therefore, effective separation of the germanium melt and the dross and removal of the dross can be achieved, and germanium crystal growth in the pulling process is prevented from being affected by the dross.

A slag removal device for germanium single crystal growth comprises a furnace body, a guide cylinder, a heat preservation cylinder, a scum container, a control part and a graphite crucible, the furnace body comprises a main chamber and an auxiliary chamber, the auxiliary chamber is arranged at the top of the main chamber, and a suspended seed crystal clamp penetrates through the auxiliary chamber from top to bottom to enter the main chamber; the bottom of the main chamber is provided with a console, a graphite crucible and a heat preservation cylinder; a control piece is arranged on a slope surface on one side of the upper part of the main chamber and connected with one end of a control rod extending into the main chamber, a sealing ring is arranged at an opening of the control rod extending into the main chamber, and a scum container is suspended at the other end of the control rod; an observation window is formed in the slope surface of the other side of the main chamber. The device can remove slag floating on the surface of a melt in the crystal growth process, and prevents the floating slag from entering a solid-liquid interface to cause crystal change of growing germanium crystals; in the single crystal growth process, the auxiliary chamber does not need to be opened, so that the germanium melt is prevented from being secondarily polluted or oxidized.

The invention discloses a germanium crystal dead layer thickness automatic photon scanning collimator and a measurement method, the germanium crystal dead layer thickness automatic photon scanning collimator comprises an organic glass plate which is arranged on the top of a lead chamber and can rotate relative to the lead chamber, and the organic glass plate is provided with a pose adjustable measurement assembly. The upper surface of the lead chamber is provided with an openable and closable lead cover used for covering the organic glass plate and the pose-adjustable measuring assembly. The thickness of the dead layer of the high-purity germanium crystal can be measured, and the problem that relevant parameters of the dead layer cannot be measured is solved. The whole device is convenient to process and install, and can realize measurement in multiple directions; according to the method, a photon scanning method is creatively adopted, so that the cost can be further reduced, and accurate measurement of the dead layer can be realized without disassembling the detector to expose the high-purity germanium crystal.

The invention discloses a multi-revolution mirror coaxial composite long-wave infrared monitoring optical system, and belongs to the technical field of monitoring optics. The prior art is not suitable for long-wave infrared imaging and is high in processing cost. According to the invention, a multi-revolution mirror surface coaxial composite lens group and a subsequent meniscus lens are arranged along the optical axis of the system; the multi-rotation mirror surface coaxial composite mirror group is composed of six mirror surfaces with a system optical axis as a rotation axis. The six mirror surfaces are a convex aspheric light inlet refracting mirror surface, a planar primary reflecting mirror surface, a planar secondary reflecting mirror surface, a planar tertiary reflecting mirror surface, a convex aspheric quartic reflecting mirror surface and a convex aspheric light outlet refracting mirror surface in sequence along a light inlet path and a light outlet path; the plane three-time reflecting mirror surface retracts for a certain distance d towards the interior of the mirror body relative to the plane one-time reflecting mirror surface; the overall dimension of the subsequent meniscus lens is matched with the indentation distance d and the outer diameter D of the plane tertiary reflection mirror surface; the subsequent meniscus lens is embedded in the middle of the rear end of the lens body of the multi-revolution mirror surface coaxial composite lens group; the device is made of germanium crystals.

The utility model provides equipment for smelting and purifying germanium in a seed crystal induction zone. The equipment comprises a smelting furnace assembly and a heating assembly, through the seed crystal groove and the transition groove in the first end of the material loading boat body, in the zone melting process, seed crystals can effectively induce germanium to grow in a single crystal form, dislocation in the crystal growth process and generation of polycrystalline crystals are reduced through rotation of the seed crystals, the stability of the germanium single crystal growth process is improved, a certain stirring effect on a melting zone is achieved, and the growth efficiency of the germanium single crystal is improved. The impurity diffusion rate is improved, the thickness of the diffusion layer is reduced, and the influence of the change of the cross section of the germanium crystal on the crystal growth form and the temperature gradient is avoided through the buffer effect of the transition section; through the combination of the main heater and the auxiliary heater, a stable temperature gradient distribution and heat preservation interval can be formed, the influence of external environment change on the zone melting purification process is reduced, the stability of a melting zone is maintained, the stable growth of crystals is also facilitated, the quality of high-purity germanium single crystals is ensured, and the stability of the process is maintained.

The processing method for improving the utilization rate of the high-purity germanium crystal comprises the following steps: S1, respectively carrying out sheet taking and Hall testing on the head part and the tail part of the high-purity germanium crystal obtained by a czochralski method to obtain a purity qualified section; s2, taking wafers from the head part and the tail part with qualified purity, and carrying out dislocation defect and deep-energy-level impurity tests; s3, according to the dislocation defects of the head part and the tail part of the purity qualified section, rounding from the diameter with the qualified dislocation defect of the tail part to the middle part of the purity qualified section, wherein the diameter is not smaller than the minimum diameter of the plane detector; s4, according to the deep-energy-level impurity content of the head and the tail of the purity qualified section, the diameter of the head with the qualified deep-energy-level impurity content is rolled towards the middle part of the purity qualified section from the position where the diameter is not smaller than the minimum diameter of the plane detector; s5, the inverted circular truncated cone of the tail part, the circular truncated cone of the head part and the cylinder between the inverted circular truncated cone of the tail part and the circular truncated cone of the head part are qualified high-purity germanium crystals; and S6, cutting.

The preparation method of the N-type ultra-high-purity germanium single crystal comprises the following steps: S1, carrying out zone melting on ultra-high-purity germanium by adopting a zone melting method, and carrying out low-temperature Hall detection to select a qualified product A of which the conduction type is P type and the net carrier concentration NA-ND is less than or equal to 1E10cm <-3 >; s2, adopting a normal czochralski method to grow an ultra-pure germanium crystal, carrying out a low-temperature Hall test, and selecting a region-melting dopant Y of which the conduction type is N type and the net carrier concentration NA-ND is in the range of E11-E13cm <-3 >; s3, secondary zone melting is carried out, the zone melting product A in the step S1 and the zone melting dopant Y in the step S2 are put into a quartz boat together for multiple times of zone melting, a high-purity germanium polycrystalline rod is obtained, a low-temperature Hall test is carried out, and a part with the conduction type being N type and the net carrier concentration being smaller than or equal to 2E10cm <-3 > is selected as a crystal dopant W; and S4, preparing the N-type ultra-high-purity germanium single crystal, putting the zone-melting product A in the step S1 and the crystal doping agent W in the step S3 into a crucible together, carrying out normal Czochralski crystal growth, and carrying out low-temperature Hall test to obtain the N-type ultra-high-purity germanium single crystal of which the NA-ND is less than or equal to 2E10cm <-3 >.

The high-purity germanium detector electrode mask tool comprises a base, a mounting sleeve and a sealing module, the mounting sleeve is mounted on the base, a connecting plate at the bottom of the mounting sleeve is connected with the base through a fastening bolt, and the sealing module is mounted at the top of the mounting sleeve; according to the electrode mask tool for the high-purity germanium detector, the high-purity germanium crystal is placed in the mounting sleeve, the high-purity germanium crystal is pushed by the base in the mounting and fixing process of the mounting sleeve and the base, so that the top of the high-purity germanium crystal is tightly attached to the sealing attaching ring, and then the sealing gasket penetrates through the opening in the top of the mounting sleeve through the screw rod; the top of the high-purity germanium crystal is pressed and attached to the top of the high-purity germanium crystal, partial area of the top of the high-purity germanium crystal is sealed under the action of the sealing attaching ring and the sealing gasket, then the tool is placed in etching liquid, and the high-purity germanium crystal can be etched. And the etching effect of the high-purity germanium crystal is enhanced.