The invention relates to the technical field of
semiconductor preparation, in particular to a method for adhering dirty materials in the growth process of
germanium crystals, which comprises the following steps: calcining
germanium materials; inserting seed crystals into an obtained
germanium melt, setting the pulling speed of the first
crystal after
welding is stable, and carrying out seeding; starting and stopping the second
crystal pulling speed in an inching mode, controlling the edge of the dirty material to be separated from the liquid level of the germanium melt, connecting the center area of the dirty material with the germanium melt, carrying out
necking down growth, then adjusting the second
crystal pulling speed to the first crystal pulling speed, carrying out shouldering, and carrying out crystal growing continuously; when the
diameter of the crystal reaches a target
diameter, adjusting the pulling speed of the first crystal to the pulling speed of the second crystal, and repeating the above operation until the
dross on the surface of the germanium melt is completely stuck, so that the time for sticking out the dirty material is shortened, the weight of the stuck dirtymaterial is small, and the loss of the dirty material caused by
processing and purification is greatly reduced.