Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for adhering dirty materials in growth process of germanium crystals

A crystal growth and crystal technology, applied in the field of semiconductor preparation, can solve the problems of heavy dirt weight, prolonged crystal growth cycle, low efficiency, etc.

Active Publication Date: 2020-10-23
GRINM GUOJINGHUI NEW MATERIALS CO LTD
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It takes about 8 hours to completely stick out the dirty material once, and 16-20 hours for two times, which greatly prolongs the crystal growth cycle
The scum is generally in the form of flakes, and it is difficult to bond to the equal-diameter parts of the dirty material after being equal in diameter. The efficiency is very low, and the weight of the sticky dirty material is relatively large. loss

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for adhering dirty materials in growth process of germanium crystals
  • Method for adhering dirty materials in growth process of germanium crystals
  • Method for adhering dirty materials in growth process of germanium crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1. After the calcination of the germanium material is completed, the temperature is slowly lowered to the vicinity of the seeding temperature, and the crucible is rotated 1r / min, and the crystal is rotated 1r / min, and the seed crystal is slowly lowered to 10mm above the liquid surface of the melt, and baked for 15min;

[0030] 2. Lower the seed crystal to contact with the melt and continue to lower it by 2mm. After the welding is stable, set a slow pulling speed of 0.1mm / min to start seeding;

[0031] 3. The seeding length is 4mm, and the power is reduced to shoulder, so that the shoulder angle is about 120°;

[0032] 4. When the diameter of the crystal grows close to the opening diameter of the upper heat preservation channel, switch the automatic slow pulling speed to the manual fast pulling speed. The preset fast pulling speed is 1mm / s, and control the edge of the dirty material from the melt liquid by jogging The surface is 3mm, the central area of ​​the dirty mater...

Embodiment 2

[0036] 1. After the calcination of the germanium material is completed, the temperature is slowly lowered to the vicinity of the seeding temperature, and the crucible is rotated 1r / min, the crystal is rotated 1r / min, the seed crystal is slowly lowered to 10mm above the melt liquid level, and baked for 20min;

[0037] 2. Lower the seed crystal to contact with the melt and continue to lower it by 3mm. After the welding is stable, set a slow pulling speed of 0.1mm / min to start seeding;

[0038] 3. The length of the seeding is 5mm. After the seeding is completed, the power is reduced and the shouldering is started, so that the shouldering angle is about 150°;

[0039] 4. When the diameter of the crystal grows close to the opening diameter of the upper heat preservation channel, switch the automatic slow pulling speed to the manual fast pulling speed. The preset fast pulling speed is 1mm / s, and control the edge of the dirty material from the melt liquid by jogging The surface is 2m...

Embodiment 3

[0043] 1. After the calcination of the germanium material is completed, the temperature is slowly lowered to the vicinity of the seeding temperature, and the crucible is rotated at 2r / min, and the crystal is rotated at 2r / min, and the seed crystal is slowly lowered to 15mm above the melt surface, and baked for 10min;

[0044] 2. Lower the seed crystal to contact with the melt and continue to lower it by 2mm. After the welding is stable, set a slow pulling speed of 0.2mm / min to start seeding;

[0045] 3. The length of the seeding is 5mm. After the seeding is completed, the power is reduced and the shouldering is started, so that the shouldering angle is about 150°;

[0046] 4. When the diameter of the crystal grows close to the opening diameter of the upper heat preservation channel, switch the automatic slow pulling speed to the manual fast pulling speed. The preset fast pulling speed is 2mm / s, and control the edge of the dirty material from the melt liquid by jogging The surf...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of semiconductor preparation, in particular to a method for adhering dirty materials in the growth process of germanium crystals, which comprises the following steps: calcining germanium materials; inserting seed crystals into an obtained germanium melt, setting the pulling speed of the first crystal after welding is stable, and carrying out seeding; starting and stopping the second crystal pulling speed in an inching mode, controlling the edge of the dirty material to be separated from the liquid level of the germanium melt, connecting the center area of the dirty material with the germanium melt, carrying out necking down growth, then adjusting the second crystal pulling speed to the first crystal pulling speed, carrying out shouldering, and carrying out crystal growing continuously; when the diameter of the crystal reaches a target diameter, adjusting the pulling speed of the first crystal to the pulling speed of the second crystal, and repeating the above operation until the dross on the surface of the germanium melt is completely stuck, so that the time for sticking out the dirty material is shortened, the weight of the stuck dirtymaterial is small, and the loss of the dirty material caused by processing and purification is greatly reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a method for sticking out dirt during germanium crystal growth. Background technique [0002] When germanium single crystals are drawn by Czochralski (CZ method), especially large-diameter single crystals and electrical-grade low-dislocation germanium single crystals, a large amount of germanium raw materials needs to be added. After the germanium material is melted, the trace scum on the surface of the zone melting germanium ingot, the trace amount of germanium oxide on the surface of the redrawing material, and the second phase compound introduced by the presence of trace oxygen in the Ar atmosphere in the single crystal furnace, in the rotating melting In the body, all will float and gather in the center of the melt. During the crystal pulling process, new crystal nuclei are inevitably generated to form polycrystals (crystal transformation). The scum is the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/08C30B15/00
CPCC30B15/00C30B29/08
Inventor 张路于洪国林泉杜长岭赵哲
Owner GRINM GUOJINGHUI NEW MATERIALS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com