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Method for sticking out dirt during germanium crystal growth

A crystal growth and crystal technology, which is applied in the field of semiconductor preparation, can solve the problems of prolonging the crystal growth cycle, loss of raw materials and costs, and heavy weight of dirty materials, and achieve the effects of reduced loss, small weight, and tight scum arrangement

Active Publication Date: 2021-10-08
GRINM GUOJINGHUI NEW MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It takes about 8 hours to completely stick out the dirty material once, and 16-20 hours for two times, which greatly prolongs the crystal growth cycle
The scum is generally in the form of flakes, and it is difficult to bond to the equal-diameter parts of the dirty material after being equal in diameter. The efficiency is very low, and the weight of the sticky dirty material is relatively large. loss

Method used

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  • Method for sticking out dirt during germanium crystal growth
  • Method for sticking out dirt during germanium crystal growth
  • Method for sticking out dirt during germanium crystal growth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1. After the calcination of the germanium material is completed, the temperature is slowly lowered to the vicinity of the seeding temperature, and the crucible is rotated 1r / min, and the crystal is rotated 1r / min, and the seed crystal is slowly lowered to 10mm above the liquid surface of the melt, and baked for 15min;

[0030] 2. Lower the seed crystal to contact with the melt and continue to lower it by 2mm. After the welding is stable, set a slow pulling speed of 0.1mm / min to start seeding;

[0031] 3. The seeding length is 4mm, and the power is reduced to shoulder, so that the shoulder angle is about 120°;

[0032] 4. When the diameter of the crystal grows close to the opening diameter of the upper heat preservation channel, switch the automatic slow pulling speed to the manual fast pulling speed. The preset fast pulling speed is 1mm / s, and control the edge of the dirty material from the melt liquid by jogging The surface is 3mm, the central area of ​​the dirty mater...

Embodiment 2

[0036] 1. After the calcination of the germanium material is completed, the temperature is slowly lowered to the vicinity of the seeding temperature, and the crucible is rotated 1r / min, the crystal is rotated 1r / min, the seed crystal is slowly lowered to 10mm above the melt liquid level, and baked for 20min;

[0037] 2. Lower the seed crystal to contact with the melt and continue to lower it by 3mm. After the welding is stable, set a slow pulling speed of 0.1mm / min to start seeding;

[0038] 3. The length of the seeding is 5mm. After the seeding is completed, the power is reduced and the shouldering is started, so that the shouldering angle is about 150°;

[0039] 4. When the diameter of the crystal grows close to the opening diameter of the upper heat preservation channel, switch the automatic slow pulling speed to the manual fast pulling speed. The preset fast pulling speed is 1mm / s, and control the edge of the dirty material from the melt liquid by jogging The surface is 2m...

Embodiment 3

[0043] 1. After the calcination of the germanium material is completed, the temperature is slowly lowered to the vicinity of the seeding temperature, and the crucible is rotated at 2r / min, and the crystal is rotated at 2r / min, and the seed crystal is slowly lowered to 15mm above the melt surface, and baked for 10min;

[0044] 2. Lower the seed crystal to contact with the melt and continue to lower it by 2mm. After the welding is stable, set a slow pulling speed of 0.2mm / min to start seeding;

[0045] 3. The length of the seeding is 5mm. After the seeding is completed, the power is reduced and the shouldering is started, so that the shouldering angle is about 150°;

[0046] 4. When the diameter of the crystal grows close to the opening diameter of the upper heat preservation channel, switch the automatic slow pulling speed to the manual fast pulling speed. The preset fast pulling speed is 2mm / s, and control the edge of the dirty material from the melt liquid by jogging The surf...

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Abstract

The invention relates to the technical field of semiconductor preparation, in particular to a method for sticking out dirty material during the growth of germanium crystal, comprising the following steps: after calcining the germanium material; inserting a seed crystal into a germanium melt, and after the fusion is stabilized The first crystal pulling speed is set, and seeding is performed; the second crystal pulling speed is started and stopped in a jog type, and the edge of the dirty material is controlled to be separated from the liquid level of the germanium melt, and the central area of ​​the dirty material is connected with the germanium melt, Neck growth is carried out, and then the pulling speed of the second crystal is adjusted to the pulling speed of the first crystal for re-shouldering, and the crystal is continued to grow; when the diameter of the crystal grows to the target diameter, the pulling speed of the first crystal is adjusted to the first crystal pulling speed. The second crystal pulling speed is repeated in this way until the scum on the surface of the germanium melt is completely adhered. This method reduces the time required for sticking out the dirty material, and the weight of the sticking out dirty material is small, which greatly reduces the pollution caused by the processing and purification of the dirty material. loss.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a method for sticking out dirt during germanium crystal growth. Background technique [0002] When germanium single crystals are drawn by Czochralski (CZ method), especially large-diameter single crystals and electrical-grade low-dislocation germanium single crystals, a large amount of germanium raw materials needs to be added. After the germanium material is melted, a small amount of scum on the surface of the germanium ingot in the zone, a small amount of germanium oxide on the surface of the redrawing material, and a second-phase compound introduced by the presence of a small amount of oxygen in the Ar atmosphere in the single crystal furnace, in the rotating melting In the body, all will float and gather in the center of the melt. During the crystal pulling process, new crystal nuclei are inevitably generated to form polycrystals (crystal transformation). ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/08C30B15/00
CPCC30B15/00C30B29/08
Inventor 张路于洪国林泉杜长岭赵哲
Owner GRINM GUOJINGHUI NEW MATERIALS CO LTD
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