Polishing liquid for germanium crystal chemical and mechanical polishing and use method thereof
A crystal chemical and mechanical polishing technology, applied in the field of CMP polishing liquid, can solve the problems of high cost of germanium materials, inability to guarantee processing quality, waste of raw materials, etc.
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Embodiment 1
[0024] Prepare 3000g germanium single crystal coarse polishing liquid and 500g fine polishing liquid and perform two-step polishing
[0025] Get 1500g abrasive particle diameter 15-20 nanometer SiO2 sol, add 1235g deionized water while stirring, then add 30g FA / OI type surfactant respectively while stirring, 45gFA / OII type chelating agent, 60g concentration 20% four Hydroxyethylethylenediamine solution, 30g of oxidizing agent hydrogen peroxide, and stir well to prepare a coarse throwing liquid; then take 2.5g of FA / OI type surfactant and stir and add it to 497.5g of deionized water to prepare a fine throwing liquid. Then carry out two-step polishing, rough polishing process 300g / min flow rate, pressure 27.58KPa, temperature 35°C, speed 60 / 65rpm, rough polishing 10min and then fine polishing, flow rate 500g / min, pressure 13.79KPa, temperature 25°C Rotate at 90 / 95rpm, polish for 1min. The final polishing rate was 1.04 μm / min, and the surface roughness was 14.7 nm.
Embodiment 2
[0027] Prepare 2000g germanium single crystal coarse polishing liquid and 400g fine polishing liquid and perform two-step polishing
[0028] Get 500g abrasive particle diameter 60-70 nanometer SiO sol, add 1430g deionized water while stirring, then add 10g FA / OI type surfactant respectively while stirring, 20gFA / OII type chelating agent, 20g concentration 20% four Hydroxyethylenediamine solution, 20g of oxidant hydrogen peroxide, stirred evenly to prepare a coarse throwing liquid; finally, take 1.2g of FA / OI type surfactant and add to 398.8g of deionized water after stirring to prepare a fine throwing liquid. Then carry out two-step polishing, the rough polishing process is 200g / min, the pressure is 13.79KPa, the temperature is 30°C, and the speed is 60 / 65rpm. After rough polishing for 10 minutes, fine polishing is carried out. The flow rate is 400g / min, the pressure is 6.895KPa, and the temperature is 25°C. Rotate at 80 / 85rpm, polish for 1min. The final polishing rate was 1....
Embodiment 3
[0030] Prepare 1000g germanium single crystal coarse polishing liquid and 300g fine polishing liquid and perform two-step polishing
[0031] Get 100g abrasive particle diameter 100-110 nanometer SiO sol, add 890g deionized water while stirring, then add 1g of FA / OI type surfactant respectively while stirring, 2gFA / OII type chelating agent, 5g concentration of 20% four Hydroxyethylenediamine solution, 2g of oxidizing agent hydrogen peroxide, stirred evenly to prepare a coarse throwing liquid; finally, take 0.3g of FA / OI type surfactant and stir and add it to 399.7g of deionized water to prepare a fine throwing liquid. Then carry out two-step polishing, rough polishing process 100g / min flow rate, pressure 6.895KPa, temperature 25°C, speed 40 / 45rpm, rough polishing 10min and then fine polishing, flow rate 300g / min, pressure 0KPa, temperature 25°C speed 60 / 65rpm, polishing for 1min. The final polishing rate was 1.001 μm / min, and the surface roughness was 14.1 nm.
[0032] The FA...
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