Polishing liquid for germanium crystal chemical and mechanical polishing and use method thereof

A crystal chemical and mechanical polishing technology, applied in the field of CMP polishing liquid, can solve the problems of high cost of germanium materials, inability to guarantee processing quality, waste of raw materials, etc.

Inactive Publication Date: 2019-05-21
青岛凯玉盈商贸有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cost of germanium materials is relatively high. If traditional grinding and polishing methods are used for processing, it will not only waste raw materials but also fail to guarantee the processing quality; the research and development and wide application of germanium materials are driving the demand for

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Prepare 3000g germanium single crystal coarse polishing liquid and 500g fine polishing liquid and perform two-step polishing

[0025] Get 1500g abrasive particle diameter 15-20 nanometer SiO2 sol, add 1235g deionized water while stirring, then add 30g FA / OI type surfactant respectively while stirring, 45gFA / OII type chelating agent, 60g concentration 20% four Hydroxyethylethylenediamine solution, 30g of oxidizing agent hydrogen peroxide, and stir well to prepare a coarse throwing liquid; then take 2.5g of FA / OI type surfactant and stir and add it to 497.5g of deionized water to prepare a fine throwing liquid. Then carry out two-step polishing, rough polishing process 300g / min flow rate, pressure 27.58KPa, temperature 35°C, speed 60 / 65rpm, rough polishing 10min and then fine polishing, flow rate 500g / min, pressure 13.79KPa, temperature 25°C Rotate at 90 / 95rpm, polish for 1min. The final polishing rate was 1.04 μm / min, and the surface roughness was 14.7 nm.

Embodiment 2

[0027] Prepare 2000g germanium single crystal coarse polishing liquid and 400g fine polishing liquid and perform two-step polishing

[0028] Get 500g abrasive particle diameter 60-70 nanometer SiO sol, add 1430g deionized water while stirring, then add 10g FA / OI type surfactant respectively while stirring, 20gFA / OII type chelating agent, 20g concentration 20% four Hydroxyethylenediamine solution, 20g of oxidant hydrogen peroxide, stirred evenly to prepare a coarse throwing liquid; finally, take 1.2g of FA / OI type surfactant and add to 398.8g of deionized water after stirring to prepare a fine throwing liquid. Then carry out two-step polishing, the rough polishing process is 200g / min, the pressure is 13.79KPa, the temperature is 30°C, and the speed is 60 / 65rpm. After rough polishing for 10 minutes, fine polishing is carried out. The flow rate is 400g / min, the pressure is 6.895KPa, and the temperature is 25°C. Rotate at 80 / 85rpm, polish for 1min. The final polishing rate was 1....

Embodiment 3

[0030] Prepare 1000g germanium single crystal coarse polishing liquid and 300g fine polishing liquid and perform two-step polishing

[0031] Get 100g abrasive particle diameter 100-110 nanometer SiO sol, add 890g deionized water while stirring, then add 1g of FA / OI type surfactant respectively while stirring, 2gFA / OII type chelating agent, 5g concentration of 20% four Hydroxyethylenediamine solution, 2g of oxidizing agent hydrogen peroxide, stirred evenly to prepare a coarse throwing liquid; finally, take 0.3g of FA / OI type surfactant and stir and add it to 399.7g of deionized water to prepare a fine throwing liquid. Then carry out two-step polishing, rough polishing process 100g / min flow rate, pressure 6.895KPa, temperature 25°C, speed 40 / 45rpm, rough polishing 10min and then fine polishing, flow rate 300g / min, pressure 0KPa, temperature 25°C speed 60 / 65rpm, polishing for 1min. The final polishing rate was 1.001 μm / min, and the surface roughness was 14.1 nm.

[0032] The FA...

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PUM

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Abstract

The invention relates to polishing liquid for germanium crystal chemical and mechanical polishing and a use method thereof. The polishing liquid comprises coarse polishing liquid and fine polishing liquid, wherein the coarse polishing liquid is mainly prepared from the following raw materials in percentage by weight: 10 to 50 percent of SiO2 hydrosol abrasive grinding materials with the grinding material particle diameter being 15 to 110nm, the concentration being higher than or equal to 40 weight percent and the hardness being smaller than or equal to 7Mohs, 0.2 to 1.5 percent of oxidizing agents, 0.5 to 2 percent of pH regulating agents, 0.2 to 1.5 percent of chelating agents and 0.1 to 1 percent of surfactants; the fine polishing liquid is mainly prepared from 0.1 to 0.5 percent of surfactants and the balance deionized water. A two-step polishing method is used for chemical mechanical polishing; coarse polishing liquid is selected in the first step; the fine polishing liquid is selected in the second step; the two steps of polishing are completed on the same polishing machine. The polishing liquid has the beneficial effects that the problems of low speed, high roughness, metal ion and particle staining and the like of the germanium crystal materials in the chemical and mechanical polishing process can be solved.

Description

technical field [0001] The invention belongs to a CMP polishing liquid, in particular to a polishing liquid for germanium crystal chemical mechanical polishing and a use method. Background technique [0002] Germanium (Ge) is not only a rare metal, but also an extremely important semiconductor material. The relative atomic mass of germanium is 72.59, and the density is 5.35g / cm3; the melting point and boiling point of germanium are relatively high, which are 937.4°C and 2830°C respectively. The surface of germanium is silver-gray, and the lattice is diamond-type. [0003] Germanium plays an irreplaceable role in the guarantee of national security and the construction of the national economy. It is considered a very important strategic resource. At present, it has become a new type of clean energy material. Germanium single crystals have been widely and successfully used in the field of solar cells. Solar cells can convert light energy into electrical energy, which is of ...

Claims

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Application Information

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IPC IPC(8): C09G1/02
Inventor 宋丛恺
Owner 青岛凯玉盈商贸有限公司
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