Method and device for growing germanium crystal

Abstract

The invention discloses a method and a device for growing a germanium crystal. The method comprises the following steps of: loading a first Ge raw material into a crucible which is provided with a crystal seed mixer with crystal seeds placed therein; loading a second Ge raw material into a loading container which is to be arranged in a quartz ampoule and is used for replenishing the Ge material; sealing the crucible and the loading container in the quartz ampoule; putting the quartz ampoule sealed with the crucible and the loading container into a crystal growing melting furnace provided with a movable ampoule supporting seat which supports the quartz ampoule; melting the first Ge raw material in the crucible to generate a molten mass; melting the second Ge raw material in the container and adding the second Ge raw material into the molten mass; controlling the crystallization temperature gradient of the molten mass so that the molten mass is crystallized when contacting the crystal seeds to form a monocrystalline germanium crystal bar; and cooling the monocrystalline germanium crystal bar. The invention also provides the device which can be used for implementing the method and comprises the loading container, wherein a process for forming the monocrystalline germanium crystal bar includes bluidling 0.3-2.5DEG / cm of temperature gradient in a crystal bar growing zone.

Description

technical field [0001] The invention relates to a method and a device for growing a germanium (Ge) single crystal material. Background technique [0002] Manufacturers of electrical and optoelectronic devices usually require semiconductor single crystal materials with large size and uniform electrical properties, and the single crystal materials are sliced ​​and polished to serve as substrates for producing microelectric devices. For the growth of semiconductor crystals, the process involves melting polycrystalline feedstock (typically in excess of 1,200°C) to produce a polycrystalline feedstock melt, contacting the melt with seeds made of the material, and exposing the melt to Crystallization occurs on the seed contact surface. There are many methods used to accomplish this purpose, which can be found in the literature: Czochralski (Cz) method and its derivative Liquid Encapsulated Czochralski (LEC) method, horizontal Bridgman and The crucible descent (Horizontal Bridgman...

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Problems solved by technology

However, for VGF and VB technologies where the crucible is encapsulated in ampoules, the method described does not work

In addition, the special requirements for the growth of specially doped germanium single crystals also limit the use of the above-mentioned general methods, such as the doping process of arsenic (As) as a dopant, and the toxicity and volatility of arsenic make the growth of germanium single crystals difficult. Arsenic doping process is limited

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