Germanium-doped crystalline silicon solar cell capable of suppressing light attenuation and preparation thereof

A technology of solar cells and crystalline silicon, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of incompatibility of cell structure and process, cost increase, etc., and achieve the effects of suppressing light attenuation, low cost, and simple preparation methods

Active Publication Date: 2011-04-06
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The pn junction must be formed by diffusing boron during battery preparation, which is incompatible with the current conventional battery structure and process
In addition, the use of magnetron Czochralski single crystal silicon can significantly reduce the concentration of oxygen, but it will cause a significant increase in cost

Method used

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  • Germanium-doped crystalline silicon solar cell capable of suppressing light attenuation and preparation thereof
  • Germanium-doped crystalline silicon solar cell capable of suppressing light attenuation and preparation thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) Doping 69.8g germanium and 4.2×10 into 270Kg polysilicon raw material -2 g boron, the concentration of germanium is 5×10 18 cm -3 , The concentration of boron is 2×10 16 cm -3 , (Ie per cm 3 The number of atoms of germanium in the polysilicon raw material is 5×10 18 Per cm 3 The number of boron atoms in the polysilicon raw material is 2×10 16 A) Then in a polycrystalline ingot furnace, under an argon protective atmosphere, the pressure is 500 torr, and the furnace temperature is increased to 1480°C, germanium and boron are melted into the polycrystalline silicon solution to grow germanium-doped cast polycrystalline silicon.

[0024] (1') Using the same polycrystalline silicon raw material and doping amount of boron, in the same polycrystalline ingot furnace, the same growth parameters, growing ordinary cast polycrystalline silicon not doped with germanium as a control.

[0025] (2) After squared the germanium-doped cast polysilicon obtained in step (1) and the ordinary cas...

Embodiment 2

[0033] (1) Doping 2.33Kg germanium and 1.7×10 into 450Kg polysilicon raw material -2 g boron, the concentration of germanium is 1×10 20 cm -3 , The concentration of boron is 5×10 15 cm -3 Then, in a polycrystalline ingot furnace, under an argon protective atmosphere, the pressure is 600torr, the furnace temperature is increased to 1440°C, germanium and boron are melted into the polycrystalline silicon solution to grow germanium-doped cast polycrystalline silicon.

[0034] (1') Using the same polycrystalline silicon raw material and doping amount of boron, in the same polycrystalline ingot furnace, the same growth parameters, growing ordinary cast polycrystalline silicon not doped with germanium as a control.

[0035] (2) After squared the germanium-doped cast polysilicon obtained in step (1) and the ordinary cast polysilicon ingot obtained in step (1'), cut into 160 micron silicon wafers by wire cutting. After cleaning, the germanium-doped cast polysilicon Silicon wafers are package...

Embodiment 3

[0043] (1) Add 56.9g germanium and 2.1×10 into 55Kg polysilicon raw material -3 g boron, the concentration of germanium is 2×10 19 cm -3 , The concentration of boron is 5×10 15 cm -3 Then, in a single crystal furnace, under an argon protective atmosphere, the pressure is 10torr, the furnace temperature is increased to 1420°C, germanium and boron are melted into the polysilicon solution to grow germanium-doped Czochralski single crystal silicon.

[0044] (1') Using the same polycrystalline silicon raw material and boron doping amount, in the same single crystal furnace, the same growth parameters, and growing ordinary Czochralski single crystal silicon without germanium as a control.

[0045] (2) After slicing the germanium-doped Czochralski single crystal silicon obtained in step (1) and the ordinary Czochralski single crystal silicon ingot obtained in step (1′), cut into 180 micron silicon wafers by wire cutting. After cleaning , Germanium-doped Czochralski silicon wafers are packa...

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Abstract

The invention discloses a germanium-doped crystalline silicon solar cell capable of suppressing light attenuation and preparation thereof. The preparation method comprises the following steps of: doping germanium and boron into a polycrystalline silicon raw material, wherein the concentration of the germanium is 1,018-1,021cm<-3>, and the concentration of the boron is 1,015-1,017cm<-3>; growing germanium-doped crystalline silicon under a protection atmosphere; and slicing the obtained crystalline silicon for the preparation of the solar cell, wherein the preparation of the solar cell comprises the flows of: carrying out cleaning and wool making on an obtained silicon wafer; carrying out phosphorous diffusion after wool making; etching and depositing an anti-reflecting film; and finally, preparing an electrode and sintering to obtain the germanium-doped crystalline silicon solar cell. The invention has the advantages of simple method and low cost, realizes the compatibility of the whole solar cell preparation and conventional processes and prepares the germanium-doped crystalline silicon solar cell capable of suppressing light attenuation.

Description

Technical field [0001] The invention relates to the technical field of silicon solar cells, in particular to a germanium-doped crystalline silicon solar cell capable of inhibiting light attenuation and its preparation. Background technique [0002] Solar energy is inexhaustible and is an important renewable clean energy. Solar cells prepared by the photovoltaic effect directly convert light energy into electrical energy, which has a very attractive prospect. Since the 1990s, the photovoltaic industry has grown rapidly at a rate of 30-40% every year. Among them, crystalline silicon solar cells account for 80-90% of the market share, and will still occupy a dominant position for a long time in the future. At present, the cost of crystalline silicon solar cells is still high, which limits their large-scale application. Therefore, continuously improving the conversion efficiency of silicon solar cells and reducing costs have always been the goals of the industry and the research co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/04H01L31/0288H01L31/068
CPCY02E10/50Y02E10/546Y02P70/50
Inventor 杨德仁王朋余学功阙端麟
Owner ZHEJIANG UNIV
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