Red and yellow GaAs series LED chip and preparation method thereof
A LED chip, red and yellow technology, applied in the semiconductor field, can solve the problem of low luminous efficiency of LED chips, achieve the effect of improving the universality and avoiding the overall impact
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Embodiment 1
[0030] see figure 1 , is the red-yellow GaAs-based LED chip provided in the first embodiment of the present invention, the red-yellow GaAs-based LED chip includes a GaAs substrate 1, an epitaxial layer 2, a highly doped GaP layer 3 and a reflective layer 4 that are stacked in sequence, wherein :
[0031] The epitaxial layer 2 includes an N layer 21 , a quantum well layer 22 and a P layer 23 grown in sequence.
[0032] The high-doped GaP layer 3 includes a first carbon-doped GaP layer 31, a second carbon-doped GaP layer 32, a third carbon-doped GaP layer 33, and a fourth carbon-doped GaP layer 34, which are arranged in sequence. On the side close to the epitaxial layer 2, a plurality of transition GaP layers ( not shown).
[0033] By way of example but not limitation, in this embodiment, the carbon doping concentration of the first carbon-doped GaP layer 31 is 3e16cm -3 , the doping concentration of the second carbon-doped GaP layer 32 is 3e17cm -3 , the doping concentrati...
Embodiment 2
[0039] see figure 2 , is a method for preparing a red-yellow GaAs-based LED chip provided in the second embodiment of the present invention, which is used to prepare the LED chip in the above-mentioned first embodiment, and the method includes steps S20-S23:
[0040] Step S20, providing a GaAs substrate;
[0041] Step S21, growing an epitaxial layer on the GaAs substrate;
[0042] By way of example and not limitation, as an embodiment of the epitaxial layer, wherein:
[0043] Grow GaAs as a buffer layer on the GaAs substrate layer;
[0044] Grow GaInP on the buffer layer as a cutoff layer;
[0045] growing GaAs on the cutoff layer as an N-contact layer;
[0046] Growth of GaInP on the N-contact layer as the N-transition layer;
[0047] Growth of AlxGaInP on the N-transition layer as the N-current spreading layer;
[0048] growing N-AlInP on the N-current spreading layer to provide electrons;
[0049] Growth of AlGaInP on the N-AlInP layer as an N-barrier layer;
[005...
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