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Reflecting film structure and preparation method thereof

A thin-film structure and thin-film technology, applied in the field of reflective thin-film structure and its preparation, can solve the problems of unfavorable preparation and application, complex manufacturing process of DBR mirror, etc., and achieve the effect of simple process flow

Pending Publication Date: 2022-05-27
BEIJING BOE TECH DEV CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the embodiments of the present disclosure is to provide a reflective thin film structure and its preparation method to solve the problem in the prior art that the manufacturing process of the DBR reflector is complicated and unfavorable for large-area preparation and application

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  • Reflecting film structure and preparation method thereof
  • Reflecting film structure and preparation method thereof
  • Reflecting film structure and preparation method thereof

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Embodiment Construction

[0023] Reference herein to the drawings describe various embodiments and features of the present disclosure.

[0024] It should be understood that various modifications may be made to the embodiments requested herein. Therefore, the above specification should not be regarded as a limitation, but only as an example of an embodiment. Those skilled in the art will think of other modifications within the scope and spirit of the present disclosure.

[0025] The accompanying drawings contained in the specification and forming part of the specification illustrate embodiments of the present disclosure, and together with the general description of the present disclosure given above and the detailed description of the embodiments given below are used to explain the principles of the present disclosure.

[0026] By the following description of the preferred form of an embodiment given as a non-limiting example with reference to the accompanying drawings, these and other features of the present...

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Abstract

The invention provides a reflective thin film structure and a preparation method thereof. The reflective thin film structure comprises a preset number of reflective thin film units which are sequentially deposited on a substrate; wherein each reflecting thin film unit at least comprises a first thin film layer and a second thin film layer, the first thin film layer and the second thin film layer are made of the same phase change material, the first thin film layer is in a crystalline state of the phase change material, and the second thin film layer is in an amorphous state of the phase change material; the first refractive index of the first thin film layer is different from the second refractive index of the second thin film layer. According to the embodiment of the invention, the deposition of the same phase change material is used as the basic level of the reflective film structure, and the crystalline phase form of a part of film levels is changed to realize different refractive indexes among the levels, so that the technological process of the reflective film structure in the preparation process is simpler on the basis of ensuring the reflection efficiency of the reflective film structure, and the production cost is reduced. The method is more suitable for low-cost large-area preparation.

Description

Technical field [0001] The present disclosure relates to the field of optics and optoelectronic devices, in particular to a reflective thin film structure and a method for preparing it. Background [0002] At present, high-reflectance films are widely used in the field of optics and optoelectronic devices, such as in vertical cavity surface emitting lasers (VCSEL), using distributed Bragg mirrors (DBR, Distributed Bragg Reflection) as the reflector surface at one end of the resonator. Among them, the DBR mirror is a periodic structure composed of two materials with different refractive indexes alternately arranged in the form of A-B-A-B, when the light is shot from the photospolar medium n1 to the photosensitive medium n2, the reflected light is lost half-wave at the interface, and the corresponding phase difference is π. When the light is emitted to the DBR structure, the optical thickness of each layer of material is 1 / 4 of the central reflected wavelength, and the phase differ...

Claims

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Application Information

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IPC IPC(8): H01S5/183C23C14/04C23C14/06C23C14/35G02B5/08
CPCH01S5/18377G02B5/0816C23C14/35C23C14/042C23C14/0623Y02P70/50
Inventor 孟虎周健
Owner BEIJING BOE TECH DEV CO LTD
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