Monocrystal-like crystal quality evaluation method and system

Abstract

The invention discloses a monocrystal-like crystal quality evaluation method and a monocrystal-like crystal quality evaluation system. The monocrystal-like crystal quality evaluation method comprises the following steps: obtaining head materials and tailings of a plurality of crystal blocks obtained after the monocrystal-like crystal is squared; performing PL detection on the cross sections of the plurality of obtained head materials and the plurality of obtained tailings; performing original position splicing on the PL detection results corresponding to the plurality of head materials and the plurality of tailings according to a preset direction to correspondingly obtain a head detection result and a tail detection result of the crystal block; and evaluating the quality of the monocrystal-like crystal according to the head detection result and the tail detection result. The quality of the monocrystal-like crystal is evaluated by adopting the detection results of the cross sections of the head position and the tail position of the crystal block, so that the quality of the monocrystal-like crystal can be accurately and efficiently represented, and the dependence on the size of a seed crystal is effectively avoided.

Description

technical field [0001] The present invention relates to the technical field of single-crystal-like product design, in particular to a method and system for evaluating the quality of a single-crystal-like crystal. Background technique [0002] At present, the area ratio of defects is mainly used as one of the main basis for characterizing the quality of quasi-single-crystal crystals. It is a single-crystal-like crystal. For example, after the silicon ingot is squared, PL measurement is performed on the side of the single-crystal-like silicon block, and then the quality of the silicon ingot is evaluated according to the average value of the PL test data. [0003] However, the above-mentioned quality characterization method is limited by the position of the seed crystal, and requires that the position of the lower knife to cut the silicon block must correspond to or be adjacent to the seed crystal gap, so that the size of the silicon block to be cut is limited by the size of th...

AI Technical Summary

Problems solved by technology

Therefore, the current quality characterization method using longitudinal detection has large errors and cannot accurately characterize the quality of quasi-single crystal crystals, such as silicon ingots. At the same time, it is more dependent on the seed crystal

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