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All-SiC CMOS operational amplifier with temperature stability

An operational amplifier and stability technology, applied in the electronic field, can solve problems such as poor temperature stability, and achieve the effect of solving poor temperature stability

Pending Publication Date: 2022-06-07
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above technical problems, an embodiment of the present invention provides a full SiC CMOS operational amplifier with temperature stability to solve the problem of poor temperature stability of the gain of the existing operational amplifier made of SiC material

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  • All-SiC CMOS operational amplifier with temperature stability
  • All-SiC CMOS operational amplifier with temperature stability
  • All-SiC CMOS operational amplifier with temperature stability

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Embodiment Construction

[0040] The following will be combined with the accompanying drawings in the embodiments of the present invention, the technical solution in the embodiments of the present invention will be described clearly and completely, it is clear that the embodiments described are only a part of the embodiment of the present invention, not all embodiments. Embodiments of the present invention, all other embodiments obtained by those skilled in the art without the premise of creative labor, are within the scope of protection of the present invention.

[0041] See Figure 1 , embodiments of the present invention provided based on SiC CMOS having a temperature stability of the full SiC CMOS operational amplifier comprising an input stage 10, a bias circuit 20, an output stage 30, a compensation circuit 40 and an attenuation circuit 50; The input stage 10 is connected to the bias circuit 20 and the output stage 30, the output stage 30 is connected to the bias circuit 20, the compensation circuit 4...

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Abstract

The embodiment of the invention discloses a full SiCCMOS operational amplifier with temperature stability, which is characterized in that a first bias voltage is generated through an input stage, a first input signal and a second input signal are subjected to differential amplification to output a first amplified voltage, and the gain of the input stage is regulated and controlled according to an adjustable voltage; the bias circuit outputs a second amplification voltage and a second bias voltage according to the first bias voltage, the first input signal and the second input signal; the output stage generates an output voltage according to the first amplified voltage, the second amplified voltage and the second bias voltage; the attenuation circuit performs voltage value attenuation on the output voltage to output attenuation voltage, and the biasing circuit stabilizes a working point according to the attenuation voltage; and the compensation circuit reversely amplifies the attenuation voltage and then outputs compensation voltage to the output stage so as to adjust the magnitude of the output voltage. The gain of the input stage is irrelevant to temperature-sensitive process parameters, and the problem that the temperature stability of the gain of an existing full-SiCCMOS operational amplifier is poor is solved.

Description

Technical field [0001] The present invention relates to the field of electronic technology, in particular to a full SiC CMOS operational amplifier having temperature stability. Background [0002] Ordinary Si (silicon) CMOS (complementary metal oxide semiconductor) integrated circuits can work normally at room temperature, if the ambient temperature rises will make the internal carrier of the MOS tube increase rapidly, resulting in an increase in current, easy to burn devices and even circuits; Therefore, Si CMOS integrated circuits need to increase the cooling device when working in a high temperature environment, so that although the processed circuit can work, the circuit is large and the thermal stability is poor, and it is not easy to integrate; This instability at high temperatures is determined by the properties of semiconductor materials. [0003] As the most basic analog circuit unit, the operational amplifier is widely used in various integrated circuits, and can be com...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/30H03F3/45
CPCH03F1/301H03F3/45179H03F2200/447
Inventor 李浩刘莉马海伦常帅军钟铭浩郭建飞欧树基
Owner XIDIAN UNIV
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