A temperature-stable modified nio-ta 2 o 5 Microwave-based dielectric ceramic material and preparation method thereof

Abstract

The invention belongs to the field of electronic ceramics and its manufacture, and relates to a temperature-stable modified NiO-Ta 2 O 5 Microwave-based dielectric ceramic material and preparation method thereof. The formation of solid solution structure by ion doping modification is an important measure to adjust microwave dielectric properties, especially temperature stability. The present invention is based on the formation rule of solid solution, considering that in NiTa 2 O 6 Introducing Ni into Ceramics 2+ with Ta 5+ The cation doping of ions with similar ionic radii in the same coordination environment (coordination number CN=6), including the design of Ni 2+ ions are blocked by Cu 2+ Ionic substitution, (Ni 1 / 3 Ta 2 / 3 ) 4+ The compound ion is compounded by the compound ion [(Al 1 / 2 Nb 1 / 2 ) y Sn 1‑y ] 4+ way of substitution to obtain NiTa 2 O 6 A ceramic material with a solid solution structure, and by adjusting the molar content of each dopant ion, a microwave dielectric ceramic material with excellent temperature stability and low loss was finally prepared, and the microwave dielectric performance was excellent.

Description

technical field [0001] The invention belongs to the field of electronic ceramics and its manufacture, and relates to a temperature-stable modified NiO-Ta 2 O 5 Microwave-based dielectric ceramic material and preparation method thereof. Background technique [0002] The rapid development of 5G mobile communication technology places stringent requirements on the dielectric properties of electronic components for high-frequency communication, such as resonators, filters, and dielectric antennas. Microwave dielectric ceramics refer to ceramic materials that are used as dielectric materials in microwave frequency (300MHz ~ 300GHz) circuits and play a certain function. s concern. [0003] Among the existing microwave dielectric ceramic materials, NiTa 2 O 6 Ceramic is a system with a tetragonal structure. It has been reported by researchers that the microwave dielectric properties of the system at 1400-1600 ℃ sintering temperature are: ε r =25~27, Q×f=31200GHz, τ f = 26~35...

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Problems solved by technology

[0005] In view of the problems or deficiencies mentioned above, in order to solve the existing NiTa 2 o 6 The problem of poor temperature stability of ceramics, the invention provides a modified NiO-Ta 2 o 5 The preparation method of the microwave-based dielectric ceramic material improves the temperature stability of this type of microwave dielectric ceramic material while maintaining low dielectric loss, so that it can be widely used in the field of electronic communication

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