Temperature-stable modified NiO-Ta2O5-based microwave dielectric ceramic material and preparation method thereof

Abstract

The invention belongs to the field of electronic ceramics and manufacturing thereof, and relates to a temperature-stable modified NiO-Ta2O5-based microwave dielectric ceramic material and a preparation method thereof. Formation of a solid solution structure through ion doping modification is an important measure for adjusting microwave dielectric properties, especially for adjusting temperature stability. On the basis of a solid solution forming rule, cation doping with similar ion radiuses of Ni < 2 + > and Ta < 5 + > ions in the same coordination environment (coordination number CN is equal to 6) is introduced into NiTa2O6 ceramic, and the mode that the Ni < 2 + > ions are substituted by Cu < 2 + > ions and (Ni1 / 3Ta2 / 3) < 4 + > composite ions are substituted by composite ions [(Al1 / 2Nb1 / 2) ySn1-y] < 4 + > is designed, so that the ceramic material with the NiTa2O6 solid solution structure is obtained; and by adjusting the molar content of each doped ion, the microwave dielectric ceramic material with excellent temperature stability and low loss is finally prepared, and the microwave dielectric property is excellent.

Description

technical field [0001] The invention belongs to the field of electronic ceramics and its manufacture, and relates to a temperature-stable modified NiO-Ta 2 o 5 A microwave-based dielectric ceramic material and a preparation method thereof. Background technique [0002] The rapid development of 5G mobile communication technology puts forward strict requirements on the dielectric properties of high-frequency communication electronic components, such as resonators, filters, and dielectric antennas. Microwave dielectric ceramics refer to ceramic materials that are used as dielectric materials in circuits in the microwave frequency band (300MHz ~ 300GHz) and have certain functions. s concern. [0003] Among the existing microwave dielectric ceramic materials, NiTa 2 o 6 Ceramics are a system with a tetragonal structure. According to reports by researchers, the microwave dielectric properties of this system at the sintering temperature of 1400-1600°C are: ε r =25~27, Q×f=31...

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Problems solved by technology

[0005] In view of the problems or deficiencies mentioned above, in order to solve the existing NiTa 2 o 6 The problem of poor temperature stability of ceramics, the invention provides a modified NiO-Ta 2 o 5 The preparation method of the microwave-based dielectric ceramic material improves the temperature stability of this type of microwave dielectric ceramic material while maintaining low dielectric loss, so that it can be widely used in the field of electronic communication

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