Semiconductor memory cell fabrication method

Abstract

A semiconductor memory element preparation method comprises that: a field oxide film with predetermined thickness is formed on a semiconductor substrate with an active region to cover the active region; partial field oxide film is taken out; at least one gate electrode is formed on the predetermined position of the active region; a first source region and a gate electrode region are formed on the first side of the substrate internal gate electrode; an interlayer dielectric film is formed on the substrate which contains a gate electrode; the interlayer dielectric film is etched to form a contact hole; a bit-line is formed on the required region of the substrate and in the contact hole; the interlayer dielectric film is etched to form a node contact hole to expose partial first source region and partial field region nearby the first source region; a node electrode is formed on the interlayer dielectric film and in the node contact hole which is connected to the interlayer dielectric film.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor unit, in particular to an improved method of manufacturing a semiconductor unit for growing a field oxide film to a certain thickness, eliminating part of the field oxide film with a certain thickness and overlapping it on an active region to get a sufficient active area in it. Background technique [0002] 1A to 1E are cross-sectional views for explaining successive manufacturing steps of a conventional semiconductor memory cell. [0003] Referring now to Figure 1A. On the semiconductor substrate 1 there is a well not shown. An oxide film 2 and a nitride film 3 are sequentially deposited in the well to define a field region and an active region in part of the substrate 1, and an active pattern is formed thereon by an etching process. [0004] As shown in FIG. 1B, using the active pattern as a mask, the semiconductor substrate 1 is oxidized to form a field oxide film 4, and t...

AI Technical Summary

Problems solved by technology

As a result, there is generally a disadvantage that the thinning of the field oxide film due to the increasing integration will jeopardize the device isolation characteristics

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