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Semiconductor device

A technology of semiconductors and devices, which is applied in the field of semiconductor devices of field effect transistors, and can solve problems such as the degradation of the working characteristics of semiconductor devices

Pending Publication Date: 2022-06-28
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Scaling of MOSFETs can degrade operating characteristics of semiconductor devices

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

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Embodiment Construction

[0019] figure 1 A plan view illustrating a semiconductor device according to some embodiments of the inventive concepts. Figure 2A , Figure 2B , Figure 2C and Figure 2D shown along the figure 1 Cross-sectional views taken along lines A-A', BB', CC' and D-D'.

[0020] refer to figure 1 , Figure 2A , Figure 2B , Figure 2C and Figure 2D , the logic unit LC may be provided on the substrate 100 . In this specification, the language "logic unit" may mean a logic device (eg, inverter, flip-flop, etc.) that performs one or more specific functions. For example, the logic cell LC may include transistors constituting a logic device and wirings connecting the transistors to each other.

[0021] The substrate 100 may include a first active region PR and a second active region NR. As an example embodiment of the inventive concept, the first active region PR may be a PMOSFET region, and the second active region NR may be an NMOSFET region. The substrate 100 may be a comp...

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Abstract

Disclosed is a semiconductor device including: a substrate; a first interlayer dielectric layer on the substrate; a plurality of first vias in the first interlayer dielectric layer; a second interlayer dielectric layer on the first interlayer dielectric layer; and a first power line and a first lower line in the second interlayer dielectric layer electrically connected to respective ones of the first vias. A first width of the first power line in the first direction is larger than a second width of the first lower line in the first direction. The first power line includes a first metal material. The first lower line includes a second metal material. The first via includes a third metal material. The first metal material, the second metal material, and the third metal material are different from each other.

Description

technical field [0001] The inventive concept relates to semiconductor devices, and more particularly, to semiconductor devices including field effect transistors. Background technique [0002] Semiconductor devices include integrated circuits including metal oxide semiconductor field effect transistors (MOSFETs). As the size and design rules of semiconductor devices gradually decrease, the size of MOSFETs can be scaled down. The scaling down of MOSFETs may degrade the operating characteristics of semiconductor devices. Therefore, various researches have been conducted to develop methods of fabricating semiconductor devices with excellent performance while overcoming limitations caused by high integration of semiconductor devices. SUMMARY OF THE INVENTION [0003] Some embodiments of the inventive concept provide a semiconductor device having improved electrical characteristics. [0004] According to some embodiments of the present inventive concept, a semiconductor devi...

Claims

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Application Information

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IPC IPC(8): H01L23/528H01L23/532H01L27/092
CPCH01L23/528H01L23/5283H01L23/5286H01L23/53209H01L27/092H01L23/5226H01L27/0886H01L29/41791H01L29/7848H01L29/66545H01L29/41766H01L29/42376H01L29/0673H01L29/775H01L21/823871H01L23/485H01L21/76885H01L23/53238H01L23/53242H01L23/53257H01L23/525H01L23/481H01L21/76834H01L21/76843H01L29/7851
Inventor 李义福金洛焕金完敦南瑞祐卢宣颖朴基澈辛宗灿李民主李贤培河承锡
Owner SAMSUNG ELECTRONICS CO LTD
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