Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical mechanical polishing solution for tungsten polishing

A chemical-mechanical and polishing liquid technology, applied in polishing compositions containing abrasives, etc., can solve the problems of high static corrosion rate of tungsten surface, inability to protect tungsten surface well, and deep erosion defects, etc. The effect of improving erosion defects and increasing the static corrosion rate ratio

Pending Publication Date: 2022-07-01
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] A common problem with the above polishing solutions is that the tungsten surface cannot be well protected while ensuring the removal rate of tungsten, resulting in a high static corrosion rate of the tungsten surface.
When the polishing liquid protects the tungsten surface well and is not corroded by the etchant, the polishing speed of the tungsten material is affected by the corrosion inhibitor, and the removal rate is slow
Moreover, the erosion defect (Erosion) of these polishing fluids in the graphics chip will be relatively deep

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical mechanical polishing solution for tungsten polishing
  • Chemical mechanical polishing solution for tungsten polishing
  • Chemical mechanical polishing solution for tungsten polishing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The advantages of the present invention are further described below with reference to the accompanying drawings and specific embodiments.

[0029] Table 1 shows the formulations of chemical mechanical polishing solutions of the present invention for Examples 1 to 17 and Comparative Examples 1 to 6. According to the components and their contents listed in Table 1, they are evenly mixed in deionized water, and the pH regulator nitric acid is used to mix them evenly. Alternatively, potassium hydroxide can be adjusted to the required pH value, and then the chemical mechanical polishing liquid examples or comparative examples of the present invention can be prepared.

[0030] Table 1 The formula of chemical mechanical polishing liquid embodiment 1-17 of the present invention and comparative example 1-6

[0031]

[0032]

[0033]

[0034] The tungsten wafers were polished with the polishing solution mixed with the formula in Table 1 according to the following experim...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a chemical mechanical polishing solution for tungsten polishing. The chemical mechanical polishing solution comprises water, grinding particles, a tungsten polishing accelerant, a stabilizer, peroxide, a first tungsten corrosion inhibitor and a second tungsten corrosion inhibitor. The synergistic effect of the two corrosion inhibitors in the chemical mechanical polishing solution can significantly reduce the static corrosion rate of tungsten, improve the ratio of the polishing speed to the static corrosion speed of tungsten, improve erosion defects in graphic chips, and significantly improve the yield of products.

Description

technical field [0001] The invention relates to the field of chemical reagents for semiconductor manufacturing, in particular to a chemical mechanical polishing liquid for tungsten polishing. Background technique [0002] With the continuous development of semiconductor technology and the continuous increase of interconnect layers in large-scale integrated circuits, the planarization technology of conductive layers and insulating dielectric layers has become particularly critical. In the 1980s, chemical mechanical polishing (CMP) technology pioneered by IBM is considered to be the most effective method for global planarization. [0003] Chemical Mechanical Polishing (CMP) consists of chemical action, mechanical action, and a combination of both. It usually consists of a grinding table with a polishing pad, and a grinding head for carrying the chip. The grinding head fixes the chip, and then presses the front side of the chip on the polishing pad. When performing chemical ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C23F3/06
CPCC09G1/02C23F3/06
Inventor 何华锋王晨史经深郁夏盈李星孙金涛顾钦源
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com