Chemical mechanical polishing solution for tungsten polishing

Abstract

The invention aims to provide a chemical mechanical polishing solution for tungsten polishing. The chemical mechanical polishing solution comprises a quinine base corrosion inhibitor, water, grinding particles, a catalyst, a stabilizer, an oxidant and a pH regulator. The chemical mechanical polishing solution provided by the invention can obviously reduce the static corrosion rate of tungsten while ensuring a good polishing rate of tungsten.

Description

technical field [0001] The invention relates to the field of chemicals for semiconductor manufacturing, in particular to a chemical mechanical polishing liquid for tungsten polishing. Background technique [0002] Modern semiconductor technology has made highly miniaturized devices a reality. Hundreds of millions of components can be integrated on an integrated circuit silicon substrate. These elements form interconnect structures through wires and multi-layer interconnects. Techniques such as Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), and Electrochemical Plating (ECP) are used to deposit wires or interconnect structures on integrated circuit silicon substrates, and The excess uneven material surface formed after deposition needs to be removed. As multiple layers of material are deposited and removed, the uppermost surface of the wafer becomes uneven, and these unevennesses can lead to various defec...

AI Technical Summary

Problems solved by technology

Although the corrosion inhibitor does not affect the polishing speed and has an inhibitory effect on the defects on the substrate surface, it can only inhibit the corrosion of tungsten by about 20%.

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