Chemical mechanical polishing size

Abstract

A chemical mechanical polishing slurry for use in copper, comprising at least a phosphate ester surfactant as well as grinding particles, a complexing agent and an oxidizing agent. Using the slurry in the present invention can decrease the static erosion rate of copper, suppress the removing rate of copper at low pressures and reduce the disc-shaped depressions after polishing.

Description

technical field [0001] The present invention relates to a chemical mechanical polishing slurry for copper. Background technique [0002] With the development of microelectronics technology, the integration of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, Substrates and media must undergo chemical mechanical planarization. VLSI wiring is being transformed from traditional Al to Cu. Compared with Al, Cu wiring has low resistivity, high electromigration resistance, and short RC delay time. The advantages of Cu wiring have made it replace Al as an interconnect metal in semiconductor manufacturing. However, there is no known technology for effectively plasma etching or wet etching copper material to fully form copper interconnections in integrated circuits, so chemical mechanical polishing of c...

AI Technical Summary

Problems solved by technology

However, the above-mentioned polishing slurry for copper has insufficient polishing speed, and there are defects, scratches, stains and copper residues on the substrate surface after use, or the depression of the copper block after polishing is too large, or there are defects in the polishing process. Problems such as local or overall corrosion and high static corrosion rate of copper at room temperature and polishing temperature (such as 50°C)

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