Chemical mechanical polishing solution

Abstract

The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises grinding particles, a catalyst, a stabilizer, a corrosion inhibitor simultaneously containing amino sugar and cyclic alcohol structures, an oxidizing agent, water and a pH regulator. The chemical mechanical polishing solution provided by the invention can reduce the static corrosion rate of tungsten while ensuring the high polishing rate of tungsten and the medium polishing rate of silicon oxide, so that the surface condition of polished metal is improved, and the yield is increased.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid. Background technique [0002] With the continuous development of modern semiconductor technology, the miniaturization of electronic components has become an inevitable trend in the preparation of high-performance semiconductor materials. An integrated circuit consists of a silicon substrate and millions of components on it. These elements form an interconnect structure through multilayer interconnects. Layers and structures include materials such as single crystal silicon, silicon dioxide, tungsten and various other conductive, semiconductive and dielectric materials. Techniques such as Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) are used to prepare thin layers of these materials, after which excess material needs to be removed. As layers of material are deposited and removed, the uppermost surface of the wafer ...

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Problems solved by technology

[0006] In order to solve the problem that the chemical mechanical polishing fluid in the above-mentioned prior art cannot suppress the static corrosion of metal tungsten while maintaining a high tungsten polishing rate and a medium silicon oxide polishing rate during the tungsten polishing process

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