Rapid ultra-precision polishing sizing agent for aluminum nitride substrate and polishing cleaning processing method

A processing method and polishing slurry technology, which can be used in polishing compositions containing abrasives, metal processing equipment, grinding/polishing equipment, etc., and can solve the problems of slow polishing rate, large surface roughness, and residual impurities on the surface of substrates. , to achieve the effect of reducing indentation, cleaning the surface and high friction

Active Publication Date: 2014-11-26
JIANGSU HAIXUN IND GROUP SHARE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to solve the problems of slow polishing rate and large surface roughness after polishing in the existing aluminum nitride substrate processing process, provide a kind of polishing composition that does not corrode equipment, and avoid the erosion of acidic slurry on equipment. It is beneficial to prolong the service life of the equipment, and at the same time provide the selection requirements and finishing process of the polishing pad in different process steps, so as to ensure the surface quality of the aluminum nitride substrate processing and prolong the service life of the polishing pad
At the same time, the cleaning solution and cleaning process provided solve the problems of residual impurities on the surface of the substrate after aluminum nitride polishing. Sheet surface quality requirements

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] In the rapid ultra-precision polishing slurry of the aluminum nitride substrate of the present embodiment,

[0028] The preparation method of one-step polishing slurry is as follows:

[0029] Weigh 10kg of silica sol with a particle size of 130nm and a mass concentration of 35%, and add 0.5% tetramethylammonium hydroxide, 2% diethylenetriamine, 0.15% ethylene diethylene glycol in sequence according to the mass of the silica sol under stirring. Disodium amine tetraacetate, stir well and set aside.

[0030] The preparation method of the two-step polishing slurry is as follows:

[0031] Weigh 10kg of silica sol with a particle size of 50nm and a mass concentration of 35%, and add 0.3% tetramethylammonium hydroxide, 1.5% diethylenetriamine, 0.1% ethylene diethylene glycol in sequence according to the mass of the silica sol under stirring. Disodium amine tetraacetate, stir well and set aside.

[0032] The method of polishing and cleaning the aluminum nitride substrate wit...

Embodiment 2

[0038] In the rapid ultra-precision polishing slurry of the aluminum nitride substrate of the present embodiment,

[0039] The preparation method of one-step polishing slurry is as follows:

[0040] Weigh 10 kg of silica sol with a particle size of 150 nm and a mass concentration of 35%, and add 0.8% tetramethylammonium hydroxide, 2.5% hydroxyethylethylenediamine, 0.15% Sodium polyacrylate, stir well and set aside.

[0041] The preparation method of the two-step polishing slurry is as follows:

[0042] Weigh 10 kg of silica sol with a particle size of 60 nm and a mass concentration of 35%, and add 0.3% tetramethylammonium hydroxide, 2.0% hydroxyethylethylenediamine, 0.1% Sodium polyacrylate, stir well and set aside.

[0043] The method of polishing and cleaning the aluminum nitride substrate with the rapid ultra-precision polishing slurry of the present embodiment includes the following steps:

[0044] 1) Dilute the one-step polishing slurry and pure water at a ratio of 1:...

Embodiment 3

[0050] In the rapid ultra-precision polishing slurry of the aluminum nitride substrate of the present embodiment,

[0051] The preparation method of one-step polishing slurry is as follows:

[0052] Weigh 10 kg of silica sol with a particle size of 180 nm and a mass concentration of 35%, and add 0.8% tetramethylammonium hydroxide, 1.5% hydroxyethylethylenediamine, 1.5% Diethylenetriamine, 0.15% sodium polyacrylate, stir well and set aside.

[0053] The preparation method of the two-step polishing slurry is as follows:

[0054] Weigh 10 kg of silica sol with a particle size of 40 nm and a mass concentration of 35%, and add 0.5% tetramethylammonium hydroxide, 1.0% hydroxyethylethylenediamine, 1.0% Diethylenetriamine, 0.10% sodium polyacrylate, stir well and set aside.

[0055] The method of polishing and cleaning the aluminum nitride substrate with the rapid ultra-precision polishing slurry of the present embodiment includes the following steps:

[0056] 1) Dilute the one-st...

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Abstract

The invention provides a rapid ultra-precision polishing sizing agent for an aluminum nitride substrate. The rapid ultra-precision polishing sizing agent consists of a primary polishing sizing agent and a secondary polishing sizing agent, wherein the primary polishing sizing agent comprises 20 to 40 weight percent of large particle size silica sol, 0.05 to 5 weight percent of pH regulator and 0.1 to 0.8 weight percent of dispersing agent; and the secondary polishing sizing agent comprises 20 to 40 weight percent of small particle size silica sol, 0.02 to 3 weight percent of pH regulator and 0.1 to 1.0 weight percent of dispersing agent. The invention also provides a polishing cleaning processing method in which the rapid ultra-precision polishing sizing agent for the aluminum nitride substrate is applied. The rapid ultra-precision polishing sizing agent composition for the aluminum nitride substrate and a cleaning agent are environment-friendly and are harmless for a human body. The polishing cleaning processing method is simple and is easy to operate. Polishing equipment is not corroded. The depreciation speed of the equipment is reduced. The processing cost is reduced.

Description

technical field [0001] The invention relates to a fast and ultra-precise polishing slurry for an aluminum nitride substrate and a polishing cleaning processing method. It is mainly used in the rapid ultra-precision polishing process and subsequent cleaning process of aluminum nitride substrates. Background technique [0002] Aluminum nitride (AlN) is a new type of ceramic material with excellent comprehensive properties. It has excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxic, and a series of similar thermal expansion coefficients to silicon. With excellent properties, it is considered to be an ideal material for a new generation of integrated semiconductor substrates and electronic device packaging, and has been widely valued by researchers at home and abroad. Theoretically, the thermal conductivity of AlN is 320W.m -1 .K -1 , which is 5-10 times the thermal conductivity of the traditional substrate ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02B24B55/00
Inventor 李家荣马超唐会明
Owner JIANGSU HAIXUN IND GROUP SHARE
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