Manufacturing method of electron emitter, electron source and image formation equipment

Abstract

To provide a manufacturing method of an electron emission element which comprises a conductive thin film that includes an electron-emitting region disposed between a pair of electrodes arranged on a substrate. The method comprises the process wherein an organometal solution containing component elements for the conductive thin film is sprayed to the substrate through the nozzle while potential being kept different between the electrodes. This invention also involves a manufacture method of an electron source and a manufacture method of imaging device.

Description

technical field [0001] This application is a divisional application of the Chinese patent application with the application number 95117385.5 and the invention title "Electron emission device and its manufacturing method, electron source and imaging device" submitted by the applicant on September 22, 1995. [0002] The present invention relates to a novel electron-emitting device, and also relates to an image forming apparatus and an electron source including such an electron-emitting device. Background technique [0003] There are two types of electron-emitting devices in the prior art: thermionic cathode devices and cold cathode devices. Cold cathode devices refer to field emission type (hereinafter referred to as FE type), metal / insulation layer / metal type (hereinafter referred to as MIM type), surface conduction type, etc. > Examples of FE type devices include: W.P.Dyke and W.W.Dolen in the article entitled "Field Emis-sion" (Advance in Electron Physics, 8, 89 (1956))...

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Problems solved by technology

[0015] On the other hand, as a result of the above-mentioned energization forming process, the electron-emitting region produced in the surface conduction type electron-emitting device may become curved, especially when the distance between the device electrodes is large, thus reducing the Convergence of electron beams emanating from there

Thus, the energization forming process in the manufacture of surface conduction type electron-emitting devices is likely to lose accuracy in the position and cross-sectional facet of the electron-emitting region, resulting in devices with poor operability

[0016] Thus, in an electron source comprising a large number of surface conduction type electron-emitting devices with device electrodes separated by a large distance, and in an image forming apparatus using such an electron source, the electron-emitting operation of the electron-emitting devices is not uniform, Therefore, the distribution of brightness is also uneven, and the electron beams they emit cannot be converged in the desired way.

Since the device can only provide a blurry image, its image display performance must be poor

[0017] In addition, in the energization forming process for producing electron-emitting regions of surface conduction type electron-emitting devices, the power consumed by each device is generally between several tens of milliwatts and several hundred milliwatts. A single electron source for , or an imaging device using such an electron source requires a huge amount of power

Therefore, during the energization forming process, the voltage applied to each device produces a significant voltage drop, with additional loss of uniformity in the performance of the resulting devices

In some cases, the substrate may be cracked during actuation as a result of the lack of uniformity

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