MTJ and memory
A memory and magnetic layer technology, applied in the field of memory, can solve the problem of poor data storage capacity of the memory, and achieve the effects of alleviating poor data storage capacity, good storage capacity, and improving data storage capacity
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Embodiment 1
[0048] like image 3 As shown, the material of the barrier layer 10 of the MTJ is MgO, and also includes the first magnetic layer 20, the material of the first coupling layer 30 is Mo, the first structure layer 41 is Co, and the second structure layer 42 is Pt. Co and 2 pieces of Pt form an alternate part, 1 piece of Co is a non-alternate part, the material of the second coupling layer 50 is Ru, and also includes a third magnetic layer 60 and a cover layer 70, and the material of the cover layer 70 is MgO.
Embodiment 2
[0050] like Figure 4 As shown, the material of the barrier layer 10 of the MTJ is MgO, and also includes the first magnetic layer 20, the material of the first coupling layer 30 is Ir, the first structural layer 41 is Co, and the second structural layer 42 is Ni. Co and one Ni form an alternating part, one Co is a non-alternating part, the material of the second coupling layer 50 is Ir, and also includes a third magnetic layer 60 and a cover layer 70, and the material of the cover layer 70 is MgO.
[0051] From the above description, it can be seen that the above-mentioned embodiments of the present application achieve the following technical effects:
[0052] 1) In the MTJ of this application, the thickness of the magnetic film of the free layer is increased on the traditional MTJ. By increasing the thickness, the energy barrier height is larger, which ensures the better preservation ability of the MTJ, and can improve the data preservation of the MTJ. Therefore, the proble...
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