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MTJ and memory

A memory and magnetic layer technology, applied in the field of memory, can solve the problem of poor data storage capacity of the memory, and achieve the effects of alleviating poor data storage capacity, good storage capacity, and improving data storage capacity

Pending Publication Date: 2022-07-01
ZHEJIANG HIKSTOR TECHOGY CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The main purpose of the present application is to provide an MTJ and memory to solve the problem of poor memory data storage capacity in the prior art

Method used

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Experimental program
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Effect test

Embodiment 1

[0048] like image 3 As shown, the material of the barrier layer 10 of the MTJ is MgO, and also includes the first magnetic layer 20, the material of the first coupling layer 30 is Mo, the first structure layer 41 is Co, and the second structure layer 42 is Pt. Co and 2 pieces of Pt form an alternate part, 1 piece of Co is a non-alternate part, the material of the second coupling layer 50 is Ru, and also includes a third magnetic layer 60 and a cover layer 70, and the material of the cover layer 70 is MgO.

Embodiment 2

[0050] like Figure 4 As shown, the material of the barrier layer 10 of the MTJ is MgO, and also includes the first magnetic layer 20, the material of the first coupling layer 30 is Ir, the first structural layer 41 is Co, and the second structural layer 42 is Ni. Co and one Ni form an alternating part, one Co is a non-alternating part, the material of the second coupling layer 50 is Ir, and also includes a third magnetic layer 60 and a cover layer 70, and the material of the cover layer 70 is MgO.

[0051] From the above description, it can be seen that the above-mentioned embodiments of the present application achieve the following technical effects:

[0052] 1) In the MTJ of this application, the thickness of the magnetic film of the free layer is increased on the traditional MTJ. By increasing the thickness, the energy barrier height is larger, which ensures the better preservation ability of the MTJ, and can improve the data preservation of the MTJ. Therefore, the proble...

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Abstract

The invention provides an MTJ and a memory. The MTJ comprises a reference layer, a barrier layer and a free layer which are stacked in sequence. The free layer comprises a first magnetic layer, a first coupling layer, a second magnetic layer, a second coupling layer and a third magnetic layer which are stacked in sequence. According to the scheme, on the basis of a traditional MTJ, the thickness of the free layer magnetic film is increased, the height of the energy barrier is large by increasing the thickness, it is guaranteed that the storage capacity of the MTJ is good, then the data storage capacity of the MTJ can be improved, and therefore the problem that in the prior art, the data storage capacity of a memory is poor is well solved.

Description

technical field [0001] The present application relates to the field of memory, and in particular, to an MTJ and a memory. Background technique [0002] STT-MRAM (Spin Torque Transfer Magnetic Random Access Memory, spin transfer torque random access memory) has the advantages of simple circuit design, fast read and write speed, and non-volatility. Its basic structure is a magnetic tunnel junction (MTJ), which consists of a free layer, a reference layer, and a barrier layer sandwiched between them. Among them, the magnetization direction of the reference layer is fixed and does not flip during the operation of the device; the magnetization direction of the free layer is collinear (parallel or anti-parallel) with the reference layer. By using the spin torque of electrons, the magnetization direction of the free layer is reversed, so that the magnetization direction of the reference layer and the free layer are parallel (lower resistance) or antiparallel (higher resistance), so...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/10
CPCH10N50/85H10N50/10
Inventor 孙一慧孟凡涛简红宫俊录
Owner ZHEJIANG HIKSTOR TECHOGY CO LTD
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