MTJ and memory

A memory and magnetic layer technology, applied in the field of memory, can solve the problem of poor data storage capacity of the memory, and achieve the effects of alleviating poor data storage capacity, good storage capacity, and improving data storage capacity

Pending Publication Date: 2022-07-01

ZHEJIANG HIKSTOR TECHOGY CO LTD

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AI-Extracted Technical Summary

Problems solved by technology

[0008] The main purpose of the present application is to provide an MTJ and me...

Method used

1), the MTJ of the present application, on traditional MTJ, increased the thickness of free-layer magnetic film, makes energy barrier height bigger by increasing thickness, has guaranteed that the preservation ability of MTJ is better, and then can improve MTJ The data storage capacity is high, thereby better alleviating the problem of poor data storage capacity of the memory in the prior art.

[0036] In yet another embodiment of the present application, the above-mentioned first magnetic layer is not the above-mentioned stacked stru...

Abstract

The invention provides an MTJ and a memory. The MTJ comprises a reference layer, a barrier layer and a free layer which are stacked in sequence. The free layer comprises a first magnetic layer, a first coupling layer, a second magnetic layer, a second coupling layer and a third magnetic layer which are stacked in sequence. According to the scheme, on the basis of a traditional MTJ, the thickness of the free layer magnetic film is increased, the height of the energy barrier is large by increasing the thickness, it is guaranteed that the storage capacity of the MTJ is good, then the data storage capacity of the MTJ can be improved, and therefore the problem that in the prior art, the data storage capacity of a memory is poor is well solved.

Application Domain

Magnetic-field-controlled resistorsGalvano-magnetic material selection

Technology Topic

Magnetic layerMechanical engineering +4

Image

Examples

Experimental program(2)

Example Embodiment

[0047] Example 1

[0048] like image 3 As shown, the material of the barrier layer 10 of the MTJ is MgO, and also includes the first magnetic layer 20, the material of the first coupling layer 30 is Mo, the first structure layer 41 is Co, and the second structure layer 42 is Pt. Co and 2 pieces of Pt form an alternate part, 1 piece of Co is a non-alternate part, the material of the second coupling layer 50 is Ru, and also includes a third magnetic layer 60 and a cover layer 70, and the material of the cover layer 70 is MgO.

Example Embodiment

[0049] Example 2

[0050] like Figure 4 As shown, the material of the barrier layer 10 of the MTJ is MgO, and also includes the first magnetic layer 20, the material of the first coupling layer 30 is Ir, the first structural layer 41 is Co, and the second structural layer 42 is Ni. Co and one Ni form an alternating part, one Co is a non-alternating part, the material of the second coupling layer 50 is Ir, and also includes a third magnetic layer 60 and a cover layer 70, and the material of the cover layer 70 is MgO.

[0051] From the above description, it can be seen that the above-mentioned embodiments of the present application achieve the following technical effects:

[0052] 1) In the MTJ of this application, the thickness of the magnetic film of the free layer is increased on the traditional MTJ. By increasing the thickness, the energy barrier height is larger, which ensures the better preservation ability of the MTJ, and can improve the data preservation of the MTJ. Therefore, the problem of poor data storage capacity of the memory in the prior art is better alleviated.

[0053] 2), the memory of the present application, due to including any of the above-mentioned MTJs, in the MTJ, the thickness of the free layer magnetic film is increased, and the energy barrier height is larger by increasing the thickness, ensuring that the MTJ has a better storage capacity. , and then the data storage capability of the MTJ can be improved, thereby better alleviating the problem of poor data storage capability of the memory in the prior art.

PUM

Description & Claims & Application Information

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