MTJ and memory
A memory and magnetic layer technology, applied in the field of memory, can solve the problem of poor data storage capacity of the memory, and achieve the effects of alleviating poor data storage capacity, good storage capacity, and improving data storage capacity
Pending Publication Date: 2022-07-01
ZHEJIANG HIKSTOR TECHOGY CO LTD
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Abstract
The invention provides an MTJ and a memory. The MTJ comprises a reference layer, a barrier layer and a free layer which are stacked in sequence. The free layer comprises a first magnetic layer, a first coupling layer, a second magnetic layer, a second coupling layer and a third magnetic layer which are stacked in sequence. According to the scheme, on the basis of a traditional MTJ, the thickness of the free layer magnetic film is increased, the height of the energy barrier is large by increasing the thickness, it is guaranteed that the storage capacity of the MTJ is good, then the data storage capacity of the MTJ can be improved, and therefore the problem that in the prior art, the data storage capacity of a memory is poor is well solved.
Application Domain
Magnetic-field-controlled resistorsGalvano-magnetic material selection
Technology Topic
Magnetic layerMechanical engineering +4
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