Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor light emitting element

A technology of light-emitting elements and semiconductors, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., and can solve the problems of inability to inject light-emitting elements and fully luminous light-emitting elements

Inactive Publication Date: 2004-04-21
SHARP KK
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the current from the pad electrode 700 cannot be efficiently injected into the P-type layer 300 through the light-transmitting electrode 600 on the side wall portion of the current blocking layer 400, and there is a problem that the light-emitting element cannot be fully illuminated and the light can be effectively extracted. , That is, the problem that it cannot function as a light-emitting element

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor light emitting element
  • Semiconductor light emitting element
  • Semiconductor light emitting element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] 1( a ) and ( b ) show the electrode structure of the gallium nitride-based compound semiconductor light-emitting device of the present invention.

[0041] This light-emitting device is a p-type gallium nitride that forms a light-emitting surface by sequentially stacking a buffer layer 2, an n-type gallium nitride-based compound semiconductor layer 3, and a p-type gallium nitride-based compound semiconductor layer 4 on an insulating substrate. A current blocking layer 6 and a light-transmitting electrode 5 are formed on the compound semiconductor layer 4, and a pad electrode 7 having an electrode connection portion connected to the light-transmitting electrode 5 is formed on the current blocking layer 6. The n-type gallium nitride-based compound semiconductor An n-type electrode 8 is formed on layer 3 .

[0042] Next, a method of manufacturing the above-mentioned light-emitting element will be described.

[0043] First, an AlGaN buffer layer 2 , an n-type gallium nitrid...

Embodiment 2

[0053] Another GaN-based compound semiconductor light-emitting element of the present invention is shown in figure 2 .

[0054] This light-emitting element is formed by sequentially laminating an AlGaN buffer layer 2, a p-type gallium nitride-based compound semiconductor layer 4, and an n-type gallium nitride-based compound semiconductor layer 3 on an insulating substrate 1 to form an n-type nitrogen oxide layer on the light-emitting surface. A current blocking layer 6 made of silicon nitride, a light-transmitting electrode 5 made of titanium, and a pad electrode 7 are formed on the gallium-based compound semiconductor layer 3 .

[0055] A method of manufacturing such a light-emitting element will be described below.

[0056] First, an AlGaN buffer layer 2 , a p-type gallium nitride-based compound semiconductor layer 4 , and an n-type gallium nitride-based compound semiconductor layer 3 are stacked on a sapphire substrate 1 .

[0057] Next, a silicon nitride current blockin...

Embodiment 3

[0065] 3( a ) and ( b ) show yet another gallium nitride-based compound semiconductor light-emitting device of the present invention.

[0066] In Example 3, the n-type gallium nitride-based compound semiconductor layer 3 and the p-type gallium nitride-based compound semiconductor layer 4 are sequentially stacked on the n-type conductive substrate 60 to form the p-type gallium nitride-based compound semiconductor layer 4 on the light emitting surface. A current blocking layer 6 made of titanium oxide and a light-transmitting electrode 5 are formed on the compound semiconductor layer 4, and a pad electrode 7 having an electrode connection portion in contact with the light-transmitting electrode 5 is formed on the upper surface of the current blocking layer 6 and its peripheral portion, An n-type electrode 8 is also formed on the back surface of the n-type conductive substrate 60 .

[0067] Next, a method of manufacturing the above-mentioned light-emitting element will be describ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor light emitting element comprising a semiconductor layer which gives rise to a current blocking area and a current injecting area to the surface, a current blocking layer which is formed on the semiconductor layer for constituting the current blocking area, a pad electrode formed on the current blocking layer, and a light-transmissive electrode formed on the semiconductor layer for constituting the current injecting area, characterized in that the pad electrode has an electrode connecting section which is connected to the light-transmissive electrode. Since the occurrence of the cases where the injection of an electric current into the light emitting element becomes impossible due to the disconnection of the light-transmissive electrode and the increase of the resistance value of the light-transmissive electrode can be prevented, it becomes possible to produce a light emitting element which can operate excellently in a high yield.

Description

technical field [0001] The present invention relates to a semiconductor light-emitting element, more specifically, to a light-emitting element with the surface of a semiconductor layer as a light-emitting and light-transmitting surface. Background technique [0002] A semiconductor light-emitting element with a current blocking function on the surface of the element, for example, proposed in Japanese Patent Laid-Open No. 8-250760, such as Figure 11 As shown, an N-type semiconductor layer 200 and a P-type semiconductor layer 300 are stacked on a sapphire substrate 100 , and a current blocking region and a current injection region are provided on the P-type semiconductor layer 300 . [0003] In this semiconductor light emitting element, the current blocking region is a current blocking layer (SiO 2 ) 400, on the current blocking layer 400, a barrier layer 500 (Ti, Cr, etc.) with a film thickness of about 300 nanometers, a light-transmitting electrode 600, and a liner ( pad) ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/12H01L33/20H01L33/32H01L33/38H01L33/42
CPCH01L33/32H01L33/38H01L33/145H01L33/42
Inventor 幡俊雄
Owner SHARP KK
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com