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Multiferroic auxiliary voltage controlled magnetic anisotropic memory device and method of manufacturing same

A technology of magnetic memory, equipment, applied in the direction of static memory, digital memory information, resistor controlled by magnetic field, etc.

Pending Publication Date: 2022-07-08
WESTERN DIGITAL TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, VCMA programming is non-deterministic and requires precise control of the timing of applied voltage pulses to obtain the desired magnetization direction of the free layer

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  • Multiferroic auxiliary voltage controlled magnetic anisotropic memory device and method of manufacturing same
  • Multiferroic auxiliary voltage controlled magnetic anisotropic memory device and method of manufacturing same
  • Multiferroic auxiliary voltage controlled magnetic anisotropic memory device and method of manufacturing same

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Embodiment Construction

[0027] Embodiments of the present disclosure relate to a voltage-controlled magnetic anisotropic memory device including a magnetoelectric multiferroic layer and a method of operation thereof, various aspects of which are described in detail below. The magnetoelectric multiferroic layer provides a deterministic VCMA programming mechanism (e.g., where the magnetization direction of the free layer does not depend on the duration of the programming voltage pulse) and / or provides precise control in-plane determined by the crystalline properties of the magnetoelectric multiferroic layer auxiliary magnetic field.

[0028] The drawings are not drawn to scale. Where a single instance of an element is shown, multiple instances of an element may be repeated unless explicitly described or otherwise clearly indicated that there is no repetition of the element. Items such as "first," "second," and "third" are used merely to identify similar elements, and different sequence numbers may be ...

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Abstract

A magnetic memory device includes a first electrode, a second electrode, and a stack between the first electrode and the second electrode. The stacked stack comprises a reference layer, a tunnel barrier layer, a free layer, and a magnetoelectric multiferroic layer comprising at least one crystal grain. The magnetization of the magnetoelectric multiferroic layer may be axial, roll or in-plane. For axial or roll magnetization of the magnetoelectric multiferroic layer, deterministic switching of the free layer may be achieved by coupling with an axial component of the magnetization of the magnetoelectric multiferroic layer. Alternatively, in-plane magnetization of the magnetoelectric multiferroic layer may be used to induce precession of the magnetization angle of the free layer.

Description

[0001] Related applications [0002] This application claims the benefit of priority from US Non-Provisional Patent Application No. 17 / 004,534, filed on August 27, 2020, and US Non-Provisional Patent Application No. 17 / 004,690, filed on August 27, 2020; The entire contents are incorporated herein by reference. technical field [0003] The present disclosure relates generally to the field of magnetic (eg, spin) memory devices, and in particular to magnetoresistive random access memory ("MRAM") devices including multiferroic layers and methods of making the same. Background technique [0004] A magnetoresistive memory device may store information on resistance differences in a first configuration in which the magnetization of the ferromagnetic free layer is parallel to the magnetization of the ferromagnetic reference layer and in a second configuration , the magnetization direction of the free layer is antiparallel to the magnetization of the reference layer. Programming a m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08
CPCG11C11/161G11C11/1673G11C11/1675G11C11/22H10N50/85H10N50/10
Inventor B·普拉萨德A·卡利佐夫N·史密斯
Owner WESTERN DIGITAL TECH INC
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