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Power device with vertical structure, preparation method and electronic equipment

A power device and vertical structure technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve the problem of low reverse withstand voltage and achieve the effect of improving reverse withstand voltage

Pending Publication Date: 2022-07-22
天狼芯半导体(成都)有限公司
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] The purpose of this application is to provide a vertical structure power device, preparation method and electronic equipment, aiming to solve the problem of low reverse withstand voltage still existing in vertical multilayer structure technology

Method used

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  • Power device with vertical structure, preparation method and electronic equipment
  • Power device with vertical structure, preparation method and electronic equipment
  • Power device with vertical structure, preparation method and electronic equipment

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Embodiment Construction

[0044] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application clearer, the present application will be described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, but not to limit the present application.

[0045] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0046] It is to be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top" , "bottom", "inside", "outside", etc. indicate t...

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Abstract

The invention belongs to the technical field of semiconductor devices, and provides a vertical structure power device, a preparation method and electronic equipment, and the vertical structure power device comprises a drain doping layer, a drift layer, an inversion super junction, a doped semiconductor column, surface work function metal, a dielectric layer and a source doping layer. The reverse withstand voltage of the power device is improved by the lower doped drift layer, and then the inverted super junction is arranged in the drift layer, so that the electric field distribution in the drift layer is changed, the maximum electric field of an interface between a channel and the drift layer is reduced, and the problem that the reliability of the device is reduced due to an avalanche effect caused by a high electric field when reverse bias voltage is accessed is avoided.

Description

technical field [0001] The present application belongs to the technical field of semiconductor devices, and in particular relates to a vertical structure power device, a preparation method and an electronic device. Background technique [0002] With the advancement of technology and horizontal three-dimensional structure field effect transistors (such as Fin Field-Effect Transistor (FinFET), Gate-all-around (GAA) and nanosheets (Fin Field-Effect Transistor, FinFET) After the popularity of Nano-sheet), power devices with vertical three-dimensional structure, such as tunneling field effect transistors, were proposed. [0003] However, there is still a problem of low reverse withstand voltage using the vertical multilayer structure process. SUMMARY OF THE INVENTION [0004] The purpose of the present application is to provide a vertical structure power device, a preparation method and an electronic device, which are aimed at solving the problem of low reverse withstand volta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/739H01L21/331H01L29/78H01L21/336
CPCH01L29/0634H01L29/7395H01L29/66333H01L29/7827H01L29/66666
Inventor 曾健忠
Owner 天狼芯半导体(成都)有限公司
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