Tunneling junction oxidation aperture mixed type short-wavelength VCSEL (Vertical Cavity Surface Emitting Laser) grown by MOCVD (Metal Organic Chemical Vapor Deposition) and preparation method
A tunneling junction and hybrid technology, applied to laser components, semiconductor lasers, electrical components, etc., can solve problems affecting performance uniformity, loss of VCSEL yield, affecting oxidation rate, oxidation aperture size, etc., to achieve good repeatability , the effect of improving reliability
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Embodiment 1
[0034] like figure 1 and figure 2 As shown, a MOCVD-grown tunnel junction oxide aperture hybrid short-wavelength VCSEL, the VCSEL chip is a material system with GaAs as the substrate 1, and the lasing wavelength is 980 nm. The VCSEL chip includes a substrate 1, and a buffer layer 2, a first N-type doping DBR3, an active region 4, an inversion confinement layer 5, and a second N-type doping layer are sequentially deposited on the surface of the substrate 1 by MOCVD process from bottom to top. DBR6 and ohmic contact layer 7; the inversion confinement layer 5 includes a tunnel junction 51 and an N-type doped oxide confinement layer 52 from bottom to top.
[0035] like figure 2 As shown, specifically, the tunnel junction 51 includes a P-type heavily doped layer and an N-type heavily doped layer from bottom to top. Preferably, the P-type heavily doped layer is an AlGaAs heavily doped C layer with a thickness of 20 nm and a doping concentration of 10 nm. 20 cm -3 order of mag...
Embodiment 2
[0050] like figure 1 and figure 2 As shown, the difference from the first embodiment is that the lasing wavelength of the VCSEL in this embodiment is 795 nm. The P-type heavily doped layer is an AlGaAs heavily doped C layer with a thickness of 50 nm and a doping concentration of 10 nm. 19 cm -3 order of magnitude; the N-type heavily doped layer is an AlGaAs heavily doped Te layer with a thickness of 50 nm and a doping concentration of 10 19 cm -3 Magnitude. The outer epoxide region of the N-type doped oxidation confinement layer 52 is Al 2 O 3 material and the middle unoxidized region is Al 0.98 Ga 0.02 As material, the pore diameter of the unoxidized area in the middle is 55 μm, the thickness of the N-type doped oxidation limiting layer is 40 nm, the doping atom is Si and the doping concentration is 10 17 cm -3 Magnitude. In addition, when preparing the VCSEL chip, the pressure of the reaction chamber was 55 mbar, the growth temperature of the epitaxial structure ...
Embodiment 3
[0052] like figure 1 and figure 2 As shown, the difference from the first embodiment is that the lasing wavelength range of the VCSEL chip in this embodiment is 1064 nm. The P-type heavily doped layer is an AlGaAs heavily doped C layer with a thickness of 8 nm and a doping concentration of 10 19 cm -3 order of magnitude; the N-type heavily doped layer is an AlGaAs heavily doped Te layer with a thickness of 10 nm and a doping concentration of 10 nm. 19 cm -3 Magnitude. The outer epoxide region of the N-type doped oxidation confinement layer 52 is Al 2 O 3 material and the middle unoxidized region is Al 0.98 Ga 0.02 As material, the pore diameter of the unoxidized area in the middle is 100 μm, the thickness of the N-type doped oxidation limiting layer is 50 nm, the doping atom is Si and the doping concentration is 10 17 cm -3 Magnitude. In addition, when preparing the VCSEL chip, the pressure of the reaction chamber was 50 mbar, the growth temperature of the epitaxia...
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