Superlattice phase change structure, manufacturing method thereof and phase change memory

A phase-change storage and superlattice technology, applied in semiconductor devices, electric solid-state devices, electrical components, etc., can solve the problems of large RESET current, less cycle times, and low SET speed

Pending Publication Date: 2022-07-26
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, phase change materials in the related art have problems such as low SET spe

Method used

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  • Superlattice phase change structure, manufacturing method thereof and phase change memory
  • Superlattice phase change structure, manufacturing method thereof and phase change memory
  • Superlattice phase change structure, manufacturing method thereof and phase change memory

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Embodiment Construction

[0030] The technical solutions of the present application will be further elaborated below with reference to the accompanying drawings and embodiments. While exemplary implementations of the present application are shown in the drawings, it should be understood that the present application may be implemented in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that a more thorough understanding of the present application will be provided, and will fully convey the scope of the present application to those skilled in the art.

[0031] Embodiments of the present application are described in more detail by way of example in the following paragraphs with reference to the accompanying drawings. Advantages and features of the present application will become apparent from the following description and claims. It should be noted that, the accompanying drawings are all in a very simplified form and use inaccurate sca...

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Abstract

The embodiment of the invention provides a superlattice phase change structure, a manufacturing method thereof and a phase change memory, and the superlattice phase change structure comprises phase change material layers and thermal barrier layers which are alternately stacked. The chemical general formula of the material of the phase change material layer is SbxTe1-x, and x is more than or equal to 0.7 and less than 1; the material of the thermal barrier layer comprises a titanium subgroup telluride.

Description

technical field [0001] The embodiments of the present application relate to the technical field of semiconductors, and in particular, to a superlattice (Super-Lattice Like, SLL) phase change structure, a method for manufacturing the same, and a phase change memory. Background technique [0002] Phase Change Memory (PCM) bridges the performance gap between Dynamic Random Access Memory (DRAM) and flash memory. , Small component size, low power consumption, strong vibration resistance and radiation resistance, and are widely used. [0003] Unlike DRAM and flash, which store data in the form of charges, phase change memory uses the crystalline and amorphous properties of phase change materials to store data. For example, phase change materials are induced by different electrical pulses. A fast and reversible phase transition occurs between the crystalline state. The use of electric current to convert the phase change material from an amorphous state to a crystalline state is c...

Claims

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Application Information

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IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/80H10N70/8616H10N70/011H10N70/8828
Inventor 杨红心周凌珺刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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