Photomask exposure method
An exposure method and photomask technology, applied in the field of photomask exposure, can solve the problems of long exposure time, waste of exposure time, and high cost ratio, and achieve the effects of reducing costs, avoiding stacking errors, and reducing exposure time
Pending Publication Date: 2022-07-29
广州新锐光掩模科技有限公司
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Problems solved by technology
[0003] Due to the high cost of the electron beam exposure machine, the electron beam exposure process accounts for the highest cost in the photomask manufacturing process. The exposure time is long and the cost is very high.
The same high-end photomask contains extremely precise and complex patterns, but there may also be patterns with wider critical dimensions and slightly looser precision. A typical mask layer with a high-end negative photoresist substrate is useful around the main pattern Shielding area border (full shading graphics) graphics to prevent light leakage around the periphery, there is no graphic change, only complete coverage
Graphics with loose precision, on the same photomask, if the processing method that requires the same high-precision graphics is used to expose and write, it will obviously cause a waste of exposure time
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[0029] The embodiments of the present application will be described in detail below with reference to the accompanying drawings.
[0030] The embodiments of the present application are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. The present application can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments may be combined with each other under the condition of no conflict. Based on the embodiments ...
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The invention provides a photomask exposure method, and belongs to the technical field of electron beam exposure, and the method comprises the following steps: carrying out pattern recognition on a preprocessed pattern; the preprocessed graph is divided into a first graph area and a second graph area according to the graph size, the first graph area is a large-size graph, and the second graph area is a precise graph; cutting the first pattern area and the second pattern area; exposing the first pattern area in a non-full laying and non-overlapping manner; and performing precise exposure on the second pattern area. According to the treatment scheme, the exposure time is effectively shortened, and the production cost is reduced.
Description
technical field [0001] The present application relates to the technical field of electron beam exposure, and in particular, to a photomask exposure method. Background technique [0002] Electron beam exposure is the most critical part of the pattern composition of the photomask. The exposure file is generated from the original data, and the pattern is written on the photoresist to avoid coating, and then the image is fixed by developing and etching. The traditional single electron beam exposure is directly related to the original data. The more complex the data composition, the longer the exposure time will be, generally ranging from several to dozens of hours. [0003] Due to the high cost of electron beam exposure machines, the electron beam exposure process is the most costly part of the photomask manufacturing process. The exposure time is long and the cost is very high. The same high-end photomask contains extremely precise and complex patterns, but there may also be p...
Claims
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IPC IPC(8): G03F7/20
CPCG03F7/70466G03F7/7045
Inventor 施维郑怀志
Owner 广州新锐光掩模科技有限公司