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Semiconductor structure and forming method thereof

A technology of semiconductor and gate structure, applied in the field of semiconductor structure and its formation, can solve the problem that the gate structure needs to be improved, and achieve the effects of reducing the risk of insufficient filling, improving performance and good blocking

Pending Publication Date: 2022-07-29
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the existing gate structure still needs to be improved

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Embodiment Construction

[0032] As mentioned in the background art, the existing gate structures still need to be improved. The following will be described in detail with reference to the accompanying drawings.

[0033] It should be noted that the "surface" in this specification is used to describe the relative positional relationship in space, and is not limited to whether it is in direct contact.

[0034] Figure 1 to Figure 5 It is a schematic structural diagram of each step of a method for forming a semiconductor structure.

[0035] Please refer to figure 1 , a substrate 100 is provided, and the substrate 100 has a plurality of mutually discrete fin structures 101; an isolation dielectric layer 110 is formed on the substrate 100, and the isolation dielectric layer 110 is also located on a part of the side of the fin structure 101 wall.

[0036] Please refer to figure 2 and image 3 , image 3 Yes figure 2 Schematic top view of the structure, figure 2 Yes image 3 In the schematic cros...

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Abstract

The invention discloses a semiconductor structure and a forming method thereof, and the semiconductor structure comprises a substrate which is provided with a plurality of fin structures which are separated from one another; the plurality of gate structures are located on the surface of the substrate, the gate structures stretch across the plurality of fin structures, and each gate structure comprises a work function layer located on the substrate and a first barrier layer located on the surface of the work function layer, the material of the first barrier layer comprises metal element atoms, second element atoms and third element atoms, the second element atoms are in an amorphous state, or the second element atoms and the third element atoms are in an amorphous state. Therefore, the performance and the reliability of the semiconductor structure are improved.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a method for forming the same. Background technique [0002] Complementary Metal-Oxide-Semiconductor (CMOS) is one of the basic semiconductor devices constituting an integrated circuit. Complementary metal oxide semiconductor transistors include P-type metal oxide semiconductor (PMOS) and N-type metal oxide semiconductor (NMOS). [0003] In the prior art, in order to control the short-channel effect while reducing the gate size, high-K dielectric materials are usually used to replace conventional materials such as silicon oxide as the gate dielectric layer of transistors, and metal materials are used to replace conventional polysilicon and other materials. as the gate electrode layer of the transistor. Not only that, in order to adjust the threshold voltages of the PMOS transistors and the NMOS transistors, a work function layer i...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/423H01L21/336
CPCH01L29/66803H01L29/785H01L29/42356
Inventor 周真王步雪
Owner SEMICON MFG INT (SHANGHAI) CORP
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