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Epitaxial growth apparatus

A technology of epitaxial growth and pedestal, which is applied in the direction of single crystal growth, crystal growth, climate sustainability, etc., can solve the problem of low output efficiency of epitaxial layer, and achieve the effect of improving production efficiency and output efficiency

Pending Publication Date: 2022-08-05
ZHEJIANG QIUSHI SEMICON EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide an epitaxial growth device to solve the problem that the output efficiency of the epitaxial layer of the existing epitaxial furnace is too low

Method used

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  • Epitaxial growth apparatus
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  • Epitaxial growth apparatus

Examples

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Effect test

Embodiment 1

[0065] like image 3 and Figure 4 As shown, the operating table 300 includes a first operating area 310 and a second operating area 320, a plurality of epitaxial growth devices 100, a second operating area 320 and a loading and unloading table 200 are respectively disposed on different sides of the first operating area 310, and many The epitaxial growth devices 100 are disposed on different sides of the second operation region 320 , that is, other side surfaces of the second operation region 320 that are not adjacent to the first operation region 310 are provided with a plurality of epitaxial growth devices 100 . The robotic arm assembly 400 includes a first transfer arm 410 and a second transfer arm 420 . The first transfer arm 410 is disposed in the first operation area 310 , and the second transfer arm 420 is disposed in the second operation area 320 . Also, the first transfer arm 410 can move up and down in a direction perpendicular to the first operation area 310 for tr...

Embodiment 2

[0074] like Image 6 As shown, the operating table 300 is polygonal, the loading and unloading table 200 and a plurality of epitaxial growth devices 100 are distributed in different side regions of the operating table 300 , and the robotic arm assembly 400 can be transferred between the epitaxial growth device 100 and the loading and unloading table 200 Wafer 500. Specifically, in one embodiment, the operation table 300 is in an octagonal shape, the loading and unloading table 200 is disposed on one side of the operation table 300 , and five epitaxial growth devices 100 are respectively disposed on five sides away from the loading and unloading table 200 . In this way, the epitaxial deposition apparatus can simultaneously grow 10 epitaxial layers of the silicon wafers 500, which greatly improves the yield of the silicon wafers 500 of the epitaxial deposition apparatus.

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Abstract

The invention relates to an epitaxial growth device which comprises a furnace body, the furnace body is provided with a reaction cavity, a first reaction base and a second reaction base which are horizontally arranged are arranged in the reaction cavity, and the first reaction base and the second reaction base are arranged in a spaced mode in the horizontal direction. The furnace body is further provided with a first gas inlet part, a second gas inlet part and a gas outlet part which are respectively communicated with the reaction cavity, the first reaction base is arranged between the first gas inlet part and the gas outlet part, and the second reaction base is arranged between the second gas inlet part and the gas outlet part; the reaction medium can enter the reaction cavity through the first gas inlet part and the second gas inlet part respectively, and leaves the reaction cavity through the gas outlet part. According to the epitaxial growth device provided by the invention, the problem that the epitaxial layer output efficiency of an existing epitaxial furnace is too low is solved.

Description

technical field [0001] The present application relates to the technical field of semiconductor epitaxial growth, and in particular, to an epitaxial growth device. Background technique [0002] Epitaxial growth is an important part of the semiconductor industry chain. The quality of epitaxial films directly restricts the performance of subsequent devices. With the increasing industrial demand for high-quality semiconductor devices, high-efficiency and high-quality epitaxial equipment has been obtained. more and more attention. [0003] Epitaxial growth mainly refers to the growth of a high-quality thin film on the substrate of a silicon wafer. There are many methods for growing epitaxial layers, but the most widely used is chemical vapor deposition (CVD). Chemical vapor deposition refers to chemical gas or chemical vapor deposition. A method for the synthesis of coatings or nanomaterials by the reaction of steam on the surface of a substrate. The chemical vapor deposition m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/12C30B25/14C30B25/16C30B25/08
CPCC30B25/12C30B25/14C30B25/16C30B25/08Y02P70/50
Inventor 王树林曹建伟
Owner ZHEJIANG QIUSHI SEMICON EQUIP CO LTD
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