Flash memory device and preparation method thereof

Abstract

The invention provides a flash memory device and a preparation method thereof, and the flash memory device comprises a substrate which comprises a storage region and a logic region, and a plurality of fin structures which extend along the X direction and are arranged along the Y direction are formed on the substrate of the storage region; the plurality of gate line groups extend along the Y direction and are arranged along the X direction, the gate line groups are located in the storage area, each gate line group comprises two floating gate lines, two control gate lines and a word line gate line, the control gate lines are located on the corresponding floating gate lines, and the word line gate line is located on the corresponding control gate lines. The word line grid lines are located between the two floating grid lines and between the two control grid lines; the source electrode lines and the drain electrode lines extend in the X direction and are arranged in the Y direction, and the source electrode lines and the drain electrode lines are located in the fin structure of the storage area at intervals; the electrical performance of the flash memory device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and in particular, to a flash memory device and a preparation method thereof. Background technique [0002] As a kind of non-volatile memory, the flash memory device controls the switch of the gate channel by changing the threshold voltage of the transistor or the memory cell to achieve the purpose of storing data, so that the data stored in the memory will not disappear due to power interruption. And flash memory, as a special structure of electrically erasable and programmable read-only memory, has now occupied most of the market share of non-volatile semiconductor memory and has become the fastest growing non-volatile semiconductor memory. [0003] figure 1 is a cross-sectional schematic diagram of a flash memory device, please refer to figure 1 , the flash memory device in the prior art generally has a planar structure, and the floating gate 20 ′ and the control gate 30 ′ are both lo...

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Problems solved by technology

[0003] figure 1 is a cross-sectional schematic diagram of a flash memory device, please refer to figure 1 , flash memory devices in the prior art generally have a planar structure, and the floating gate 20' and the control gate 30' are located on the substrate 10'. When the size of the floating gate 20' is reduced, the short channel effect will cause the floating gate 20 'The lower channel leakage current increases, resulting in reduced electrical performance of flash memory devices, such as reduced programming efficiency of flash memory devices, increased programming crosstalk

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