Unlock instant, AI-driven research and patent intelligence for your innovation.

Thin film transistor planar display

A flat-panel display, thin-film transistor technology, used in static indicators, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as damage to LCD reliability and inability to provide protective circuits, to reduce production costs, improve display quality, The effect of preventing electrostatic discharge

Inactive Publication Date: 2005-03-30
AU OPTRONICS CORP
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although the above-mentioned TFT manufacturing method has reduced the photolithography manufacturing process to four times, which can improve the production capacity and manufacturing cost of the TFT manufacturing process, but considering that Electrostatic Static Discharge (hereinafter referred to as ESD) damages the reliability of LCD, now The existing technology does not allow the first metal layer to be electrically connected to the second metal layer, that is, it cannot provide a protective circuit to prevent electrostatic discharge

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor planar display
  • Thin film transistor planar display
  • Thin film transistor planar display

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0025] Please refer to Figure 3 and Figure 4, Figure 3A to Figure 3E It is a bottom view of the manufacturing method of the thin film transistor flat panel display of the present invention, Figure 4A to Figure 4E It is a schematic cross-sectional view along the tangent line I-I', II-II', III-III' of Fig. 3, wherein the I area in Fig. 4 is a schematic cross-sectional view along the tangent line I-I', and the II area is a schematic cross-sectional view along the tangent line II-II', Region III is a schematic cross-sectional view along the line III-III'. First, a substrate 41 is provided, on which a transistor region (hereinafter referred to as TFT region, I region), a capacitor region (II region) and a gate pad region (III region) are disposed. Then, as in Figure 3A and Figure 4A As shown, a first metal layer is deposited on the substrate...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A plane display of film transistor comprises a base plate which has transistor zone and connection pad zone as well as grid electrode and grid pad formed on it. The first area of grid electrode and grid pad will be covered by the insulation layer, and the first semi-conducting layer covers on the insualtion layer, the second semi-conducting layer is set on one area of the first semi-conducting layer, the metal layer is set on the second semi-conducting layer to form a channel of source pole and leakage pole in interval. The first transparent conducting layer with be formed at the surface of base plate and electrodes of source pole and leakage pole but not be cover grid pad. The protection layer will cover the first transparent conducting layer and the first area on the electrodes of source pole and leakge pole. The second transparent conducting layer will be set on the uncovered area and connected with the first transparent conducting layer to let the grid pad connect with metal layer.

Description

technical field [0001] The present invention relates to a thin film transistor (thin film transistor, TFT), in particular to a thin film transistor of a flat panel display. Background technique [0002] Liquid crystal display (hereinafter referred to as LCD) is the most widely used flat-panel display at present. It has the characteristics of low power consumption, thin and light weight, and low-voltage drive. It can be used in personal computers, word processors, navigation, etc. Systems, game consoles, projectors, viewfinders, and portable machines in daily life, such as watches, computers, and televisions. [0003] The display principle of LCD is to use the dielectric anisotropy and conductive anisotropy of liquid crystal molecules. When an electric field is applied, the arrangement state of liquid crystal molecules will be converted, resulting in various photoelectric effects of liquid crystal films. The thin film transistor (thin film transistor, hereinafter referred to...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/133H01L21/70
Inventor 翁嘉璠
Owner AU OPTRONICS CORP