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Chip of ink-jet head

An inkjet head and chip technology, applied in printing and other directions, can solve problems such as cracks or holes in the protective layer, poor step coverage, infiltration, etc., and achieve the effects of improving quality, eliminating step phenomenon, and simplifying manufacturing procedures

Inactive Publication Date: 2005-08-31
MICROJET TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the existing chip structure, the large-scale integrated circuit (LSI) manufacturing process shown in Figure 1 is to first coat the silicon substrate of the chip with SiO 2 A layer of thermal barrier film is formed, and then the resistance layer (TaAl) and the conductive layer (Al) are successively plated by sputtering, and the required size is limited by the manufacturing process of yellow light and etching, and then the sputtering device is used to or a chemical vapor deposition (CVD) device coated with a protective layer (Si 3 N 4 / SiC), in this manufacturing method, because the conductive layer and the resistive layer are upper and lower layers, when the size is limited, a slope will be formed due to the erosion effect, so the protective layer will form a step at the junction of the conductive layer and the resistive layer ( Step) phenomenon, such as figure 2 Shown in the middle circle; this kind of step phenomenon is likely to cause stress concentration, poor step coverage (Step Coverage) or loose structure when the subsequent protective layer is formed
And the same situation is also arranged in the making of the ink-jet head chip, in the ink-jet head film manufacturing method disclosed in No. image 3 and Figure 4 As shown, it can be seen that there is still a ladder phenomenon between the conductive layers 20, 22 and the resistive layer 34 during the manufacture of the inkjet head chip film; and when the inkjet head is printing, the resistive layer in contact with the heating plate needs to withstand high current, In the environment of high temperature, mechanical shock and chemical corrosion, under this condition, the protective layer is very easy to produce cracks or holes in the step part, and then cause rupture, so that the ink in the box penetrates into the resistive layer and conductive layer of the chip film, causing damage to the components phenomenon occurs

Method used

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Embodiment Construction

[0018] see Figure 5 and Figure 6 As shown, it can be seen from the cross-sectional view and the top view that after the film layer of the inkjet head chip of the present invention is manufactured, the resistance region layer 12 and the first conductive region layer 11 are located on the same plane, and the thickness is the same, so the resistance region layer 12 and the first conductive region layer 11 are on the same plane, and the thickness is the same. The junction of the zone layer 12 and the first conductive zone layer 11 does not form a step, so the protective layer 16 plated on it can be evenly and evenly distributed to ensure the flatness of the heating plate area.

[0019] In order to obtain a complete inkjet head chip, the manufacturing process of the present invention is to form a thermal barrier layer 15 thin film (SiO 2 ) on the thermal barrier layer 15 with CVD or other processing methods to form a layer of polycrystalline silicon (Polycrystalline Silicon) mat...

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Abstract

A chip of ink jet head is composed of a substrate, a heat barrier layer, which is a resistance-type polycrystalline silicon layer on the substrate and is divided into the electric resistor area of heating plate and the electrically conductive area formed by doping, and a protecting layer on said polycrystalline layer.

Description

technical field [0001] The invention relates to an inkjet head chip. Background technique [0002] In the existing chip structure, the large-scale integrated circuit (LSI) manufacturing process shown in Figure 1 is to first coat the silicon substrate of the chip with SiO 2 A layer of thermal barrier film is formed, and then the resistance layer (TaAl) and the conductive layer (Al) are successively plated by sputtering, and the required size is limited by the manufacturing process of yellow light and etching, and then the sputtering device is used to or a chemical vapor deposition (CVD) device coated with a protective layer (Si 3 N 4 / SiC), in this manufacturing method, because the conductive layer and the resistive layer are upper and lower layers, when the size is limited, a slope will be formed due to the erosion effect, so the protective layer will form a step at the junction of the conductive layer and the resistive layer ( Step) phenomenon, such as figure 2 As shown...

Claims

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Application Information

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IPC IPC(8): B41J2/14B41J2/16
Inventor 林富山周沁怡张英伦
Owner MICROJET TECH