Flip-chip semiconductor device with stress absorption layer made of resin and its manufacture method

Abstract

In a flip-chip type semiconductor device, a plurality of pad electrodes are formed on a semiconductor substrate. An insulating stress-absorbing resin layer made of thermosetting resin is adhered to the substrate as a composite layer in conjunction with a first conductive layer and has openings corresponding to the pad electrodes. A plurality of metal bumps are formed on the conductive layer.

Description

technical field [0001] The present invention relates to a flip-chip type semiconductor device and its manufacturing method, and in particular to reducing stress strain in a flip-chip type semiconductor device. Background technique [0002] In recent years, flip-chip type semiconductor devices have been developed to meet the demands of higher performance, smaller and lighter size, and higher speed of electronic equipment. [0003] Generally speaking, a flip-chip semiconductor device with metal bumps is directly mounted on a motherboard with corresponding metal bump electrodes. That is, if the metal bumps are solder balls, the solder balls are reflowed and soldered to the motherboard. In this case, due to the difference in thermal expansion coefficient between the semiconductor device and the motherboard, stress strain is generated, which will degrade the reliability of the semiconductor device. It will be explained in detail later. [0004] To minimize the differences in t...

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Problems solved by technology

Multiple flexible conductive member injection openings

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