Super radiative light emitting transistor with self organized quantum spot as active region

A technology of self-organized quantum dots and quantum dot active regions, applied in phonon exciters, lasers, laser parts and other directions, can solve the problems of limited output power, high operating current, obvious thermal effects of devices, etc., to suppress lasing , the effect of wide spectral output

Inactive Publication Date: 2005-10-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0004] (1) The single quantum well structure is used as the active region of the superluminescent tube, and the high operating current is designed so that n=1 (ground state transition) and n=2 (first excited state transition) are introduced simultaneously and equally. , to get a wider output spectrum, the disadvantage is that the operating current is high, the thermal effect of the device is obvious, which limits the increase of output power

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  • Super radiative light emitting transistor with self organized quantum spot as active region
  • Super radiative light emitting transistor with self organized quantum spot as active region
  • Super radiative light emitting transistor with self organized quantum spot as active region

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Embodiment Construction

[0026] Please refer to figure 2 , image 3 , a kind of self-organized quantum dot of the present invention is the superluminescent light-emitting tube of active region, comprises:

[0027] an upper restricted layer 7;

[0028] An upper graded-index waveguide layer 8, which is fabricated under the upper confinement layer 7;

[0029] A self-organized quantum dot active region 9, the self-organized quantum dot active region 9 is fabricated under the upper graded index waveguide layer 8; said self-organized quantum dot is indium arsenic, indium gallium arsenic, indium aluminum arsenic or InGaAlAs self-organized quantum dots.

[0030] A lower graded index waveguide layer 10, the lower graded index waveguide layer 10 is fabricated below the quantum dot active region 9;

[0031] A lower confinement layer 11, the lower confinement layer 11 is fabricated under the lower graded index waveguide layer 10;

[0032] A substrate 12, which is fabricated under the lower confinement layer...

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Abstract

A superradiance light emission tube whose self-organizing quantum dots is active area, includes: a upper limit layer, a upper graded index wave-guide layer,, it is set under the upper limit layer; a self-organizing quantum dots active area, it is set under the upper graded index wave-guide layer, a lower graded index wave-guide layer, it is set under the self-organizing quantum dots active area; a lower limit layer, it is set under the lower graded index wave-guide layer; a substrate layer, it is set under the lower limit layer; a layer of medium film, it is deposited on the upper limit layer; on the medium film corrupts gradient strip-shaped current injected area. Thereinto the self-organizing quantum dots active area includes: the quantum dots with five period; on this InAs quantum dots with five period has a stress buffer layer, on each stress buffer layer has a spacer layer.

Description

Technical field: [0001] The invention relates to a semiconductor device, in particular to a superluminescent light-emitting tube with self-organized quantum dots as active regions. Background technique [0002] Superluminescent tube is a semiconductor optoelectronic device developed in the past ten years. It is an incoherent light source with internal gain. Its optical characteristics are between semiconductor lasers and light-emitting diodes. Compared with lasers, superluminescent The luminescent tube has a wider luminescence spectrum and a shorter coherence length, which can significantly reduce the noise caused by Rayleigh backscattering and nonlinear optical Kerr effect in the fiber circle, as well as the mode distribution noise of fiber transmission; and the SLD The temperature characteristics are relatively good. Compared with general light-emitting diodes, the output power of superluminescent light-emitting tubes is higher; the divergence angle is smaller and the coup...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/12H01S5/00
Inventor 张子旸王占国徐波金鹏刘峰奇
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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