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Process for making mask type read-only memory

A technology of read-only memory and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as the increase of the resistance value of the buried bit line, avoid short channel effect, and avoid the increase of resistance value Effect

Inactive Publication Date: 2005-12-21
MACRONIX INT CO LTD
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  • Description
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Problems solved by technology

However, although the source / drain regions of shallow junctions or ultra-shallow junctions can improve the problem of short channel effects caused by device scaling, but due to the shallow depth / junction of buried bit lines, it will cause Increased resistance of buried bit lines

Method used

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  • Process for making mask type read-only memory
  • Process for making mask type read-only memory
  • Process for making mask type read-only memory

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Embodiment Construction

[0024] The invention provides a method for manufacturing a mask type read-only memory. Figure 1A to Figure 1D Shown is a cross-sectional view of the manufacturing process of a mask-type ROM according to a preferred embodiment of the present invention.

[0025] First, please refer to Figure 1A , providing a substrate 100, such as a semiconductor silicon substrate. Next, a doped conductor layer 102 is formed on the substrate 100 . The material of the doped conductive layer 102 is, for example, polysilicon doped with ions. The method of forming the doped conductive layer 102 is, for example, to form a layer of doped polysilicon on the substrate 100 by doping ions on site by chemical vapor deposition. layer. The doped ions are, for example, phosphorus ions, and the doped dose is, for example, 0.5*10 19 to 0.5*10 21 cm -3 about. Doped ions can also use arsenic ions, and the doped dose is, for example, 0.5*10 19 to 0.5*10 21 cm -3 about. Then, a patterned mask layer 104 ...

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Abstract

A manufacturing method of a mask-type read-only memory, the method provides a substrate, and then forms a doped conductor layer on the substrate. Then, the doped conductor layer is patterned to form a plurality of strip-shaped doped conductor layers, and then a dielectric layer is formed on the substrate and the strip-shaped doped conductor layer by thermal oxidation, and simultaneously under the strip-shaped doped conductor layer Multiple diffusion regions are formed in the substrate. Then, a patterned conductor layer is formed on the dielectric layer.

Description

technical field [0001] The present invention relates to a method for manufacturing a read-only memory (Read Only Memory, ROM), and in particular to a method for manufacturing a mask-type read-only memory (Mask ROM). Background technique [0002] Since the read-only memory has the non-volatile characteristic that the data stored therein will not be lost due to power interruption, many electrical products must have this type of memory to maintain the normal operation of the electrical product when it is turned on. The most basic type of read-only memory is masked read-only memory. The commonly used masked read-only memory uses channel transistors as memory cells, and selectively implants ions into The specified channel region can achieve the purpose of controlling the memory cell to be turned on (On) or turned off (Off) in the read operation by changing the threshold voltage (Threshold Voltage). [0003] The structure of a general masked read-only memory is that the polysilic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8246
Inventor 范左鸿叶彦宏詹光阳刘慕义
Owner MACRONIX INT CO LTD
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