The invention discloses a process for making masking type read-only memory

Abstract

The invention discloses a process for making masking type read-only memory wherein a substrate is provided, and a doping conductor layer is formed on the substrate. Then a plurality of bar shape doping conductor layers are formed by figuring the doping conductor layer, and a dielectric layer is formed on the substrate and the bar shape doping conductor layer, at the same time, a plurality of diffusion zones are formed on the substrate under the bar shape doping conductor layer. Later, the figured conductor layer is formed on the dielectric layer.

Description

technical field [0001] The present invention relates to a method for manufacturing a read-only memory (Read Only Memory, ROM), and in particular to a method for manufacturing a mask-type read-only memory (Mask ROM). Background technique [0002] Since the read-only memory has the non-volatile characteristic that the data stored therein will not be lost due to power interruption, many electrical products must have this type of memory to maintain the normal operation of the electrical product when it is turned on. The most basic type of read-only memory is masked read-only memory. The commonly used masked read-only memory uses channel transistors as memory cells, and selectively implants ions into In the specified channel area, the purpose of controlling the memory cell to be turned on (On) or turned off (Off) during the read operation is achieved by changing the threshold voltage (Threshold Voltage). [0003] The structure of a general masked read-only memory is that the pol...

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Problems solved by technology

However, although the source / drain regions of shallow junctions or ultra-shallow junctions can improve the problem of short channel effects caused by device shrinkage, but due to the shallow depth / junction of buried bit lines, it will lead to buried The resistance of the in-line bit line increases

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