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Semiconductor device

A semiconductor and device technology, applied in the field of vertical power semiconductor devices, can solve problems such as hindering electron injection efficiency, IGBT turn-on voltage cannot be reduced, etc., and achieve the effects of improving electrical isolation effect, increasing breakdown voltage, and stabilizing breakdown voltage

Inactive Publication Date: 2006-01-11
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This hinders the improvement of the electron injection efficiency on the cathode side, that is, the turn-on voltage of the IGBT cannot be reduced

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0165] 1 to 3, this embodiment shows an example including a pin diode. The pin diode includes a second conductivity type p + Anode (collector) region 1, an n-type buffer zone 3, a n-type semiconductor substrate of the first conductivity type with low impurity concentration - Region 5, a first conductivity type n formed on the first main surface + Cathode area (n + emitter region) 7, insulating films 11 and 15, a gate electrode layer 13 as a control electrode layer, a cathode electrode 17 as a first electrode layer, and an anode electrode 19 as a second electrode layer.

[0166] Form groove 9 on the first main surface of having done cathode region 7, it passes n + After the cathode region 7 reaches the substrate n - District 5.

[0167] As shown in FIG. 1, the groove 9 has a planar shape approximately enclosing a rectangle, and within the rectangle there are several portions extending parallel to each other.

[0168] no + The cathode region is formed entirely on the firs...

Embodiment 2

[0197] refer to Figures 11 to 13 , compared with the semiconductor device according to Embodiment 1, the semiconductor device of this embodiment is different in having a p + The impurity region 23 is isolated.

[0198] p + isolation impurity region 23 in the n - Formed on the surface of the region 5, a planar region surrounding the diode forming region, and in contact with the trench 9. In addition, p + The isolation impurity region 23 is made deeper than the trench 9 .

[0199] Except for this point, this embodiment is the same as Embodiment 1. Therefore, corresponding parts are labeled with the same characters, and their descriptions will not be repeated.

[0200] A method of manufacturing the semiconductor device according to the present embodiment will be described below.

[0201] The method of manufacturing the semiconductor device according to the present embodiment first includes the same steps as in Embodiment 1 shown in FIG. 4 . Next, refer to Figure 14 , b...

Embodiment 3

[0208] refer to Figures 17 to 19 , the semiconductor device of this embodiment is different from the semiconductor device of Embodiment 1 in that it has a p + High concentration region 31 (hereinafter referred to as p + contact area)

[0209] p + Contact region 31 is formed in the diode forming region of the first main surface across trenches 9b and 9c and n + The cathode regions are adjacent. p + The contact region 31 is formed on the surface area sandwiched between the trenches 9b and 9c extending parallel to each other, as Figure 18 shown. p + The contact region 31 is electrically connected to the cathode electrode 17 . p + The surface impurity concentration of the contact region 31 is at least 1×1017 cm -3 . p + Contact area 31 and n + The cathode regions 7 are alternately arranged with grooves in between. The number of grooves 9a and 9b... can be selected arbitrarily.

[0210] Except for this point, this embodiment is almost the same as Embodiment 1. Acc...

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Abstract

A pin diode is formed by a p<+> collector region (1), an n type buffer region (3), an n<-> region (5) and an n<+> cathode region (7). A trench (9) is formed from the surface of n<+> cathode region (7) through n<+> cathode region (7) to reach n<-> region (5). An insulating film (11) is formed along an inner wall surface of trench (9). A gate electrode layer (13) is formed to oppose to the sidewall of n<+> cathode region (7) with insulating film (11) interposed. A cathode electrode (17) is formed to be electrically connected to n<+> cathode region (7). An anode electrode (19) is formed to be electrically connected to p<+> collector region (1). The n<+> cathode region (7) is formed entirely over the surface between trenches (9) extending parallel to each other. Thus, a power semiconductor device in which gate control circuit is simplified and which has good on property can be obtained.

Description

[0001] (This application is a divisional application of the application whose title of invention and application number are respectively "semiconductor device and its manufacturing method" and "96102369.4" filed on July 17, 1996) technical field [0002] The invention relates to a vertical power semiconductor device with self-shutoff function. Background technique [0003] First, let's describe conventional semiconductors. [0004] Figure 96 is a cross-sectional view schematically showing the structure of the semiconductor device according to the first prior art example. refer to Figure 96 , the first prior art example is a SITh (Static Induction Semiconductor Switching Element). The SITh includes a pin diode part, a p-type gate region 307 , a gate electrode layer 309 , a cathode electrode 311 and an anode electrode 313 . [0005] A pin diode is partly stacked and consists of a p + anode area 301, a n - region 303 and a cathode region (n + launch area) 305 . The p-ty...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/745H01L29/74H01L21/331H01L21/332H01L29/06H01L29/749H01L29/76H01L29/78H01L29/861H01L29/868H01L29/94H01L31/111H01L31/113
CPCH01L29/7391H01L29/66378H01L29/7397H01L29/0696H01L29/66348H01L29/7455H01L29/0692H01L29/749H01L29/868H01L29/66356H01L2924/0002H01L2924/00H01L29/73
Inventor 高桥彻雄中村胜光凑忠玄原田真名
Owner MITSUBISHI ELECTRIC CORP