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Manufacture of film integral sound resonator

An integral acoustic and resonator technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive devices, impedance networks, etc., can solve FBAR defects, complex manufacturing processes, difficult to form deep air gap and other issues, to achieve the effect of improving performance, simplifying manufacturing process, reducing time and cost

Inactive Publication Date: 2006-02-08
SAMSUNG ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Then, if the etched part is deep, it will take a lot of time to make the sacrificial layer, and it is difficult to form a deep air gap
[0022] Furthermore, an additional process for planarizing the sacrificial layer is necessary, which results in a long and complicated manufacturing process, and it is difficult to planarize the sacrificial layer precisely as desired
[0023] In particular, in the step of removing the sacrificial layer, the thin film for fabricating the FBAR may be etched, or the waste liquid remaining in the air gap after sacrificial layer etching may cause defects in the FBAR

Method used

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  • Manufacture of film integral sound resonator
  • Manufacture of film integral sound resonator
  • Manufacture of film integral sound resonator

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Embodiment Construction

[0039] The present invention will be described in detail by describing preferred embodiments of the invention with reference to the accompanying drawings. In the figures, the same reference numerals designate the same elements.

[0040] 2A to 2L show a method for fabricating an air-gap type FBAR according to an embodiment of the present invention.

[0041] To manufacture the FBAR, a semiconductor substrate 21 such as silicon or gallium arsenide (GaAs) is prepared as shown in FIG. 2A. A conductive electrode such as aluminum (Al) is stacked on the semiconductor substrate 21 to form the lower electrode 23, as Figure 2B shown. The lower electrode is patterned by photo process, such as Figure 2C shown. In the photo process, a photoresist 22 is coated on the lower electrode 23, and a mask of a desired patterned structure is placed on the photoresist 22. Then, exposure and development are performed.

[0042] Figure 2DThe lower electrode 23 patterned by a photo process is sh...

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Abstract

The present invention discloses a method of fabricating an air gap type Film Bulk Acoustic Resonator (FBAR). The FBAR fabrication method includes: (a) depositing and patterning a sub-electrode on a semiconductor substrate; (b) depositing and patterning a piezoelectric material layer on the sub-electrode; (c) depositing and patterning an upper electrode on the piezoelectric material layer; (d) forming a hole which passes through the upper electrode, the piezoelectric material layer and the sub-electrode; and (e) injecting a fluorine compound into the hole so that an air gap can be formed on the semiconductor substrate, and non-plasma etching the semiconductor substrate. Since the FBAR fabrication method does not include forming and eliminating the sacrificial layer in the fabrication process, the fabrication process is simplified. In addition, the air gap having the limitless frequency selectivity can be formed and the performance of the FBAR can be enhanced.

Description

technical field [0001] The present invention relates to a method of manufacturing a film bulk acoustic resonator (FBAR), and more particularly, to a method of manufacturing an air gap type FBAR. Background technique [0002] For ultra-high frequency bands, dielectric resonators, metal cavity resonators, and piezoelectric thin film resonators (FBARs) are used. These resonators are superior in small insertion loss, frequency characteristics, or temperature stability. However, they are too large to be fabricated as compact, lightweight integrated circuits on semiconductor substrates. When compared with dielectric resonators or metal cavity resonators, FBARs can be fabricated compact and can be fabricated on silicon substrates or gallium arsenide (GaAs) substrates with small insertion loss. [0003] Filters using dielectric resonators, metal cavity resonators and FBAR resonators are a core component required in mobile communication systems. Filter manuf...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04Q7/32H01L41/08H01L41/09H01L41/22H03H3/02H03H9/00H03H9/17
CPCY10T29/49155H03H9/173H03H2003/021Y10T29/49128Y10T29/42H03H3/02H03H9/00
Inventor 徐五权全灿凤朴万金
Owner SAMSUNG ELECTRONICS CO LTD