Power semiconductor module
A technology of power semiconductors and semiconductors, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as expensive, high manufacturing costs, and deteriorated thermal resistance
Inactive Publication Date: 2006-06-14
SEMIKRON ELECTRONICS GMBH & CO KG
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Problems solved by technology
This causes another problem: air is therefore not included between the pieces - this again reduces heat transfer, so the multilayer structure has to be squeezed after bonding
[0010] Another method of die-casting around multilayer structures is also an expensive manufacturing process that drives up manufacturing costs
[0011] The general conclusion is that the various methods described above deteriorate the thermal resistance of the structure, reduce the stability of low-speed load changes, increase the risk of cracking power semiconductors, and / or be very expensive
Method used
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Embodiment Construction
[0033] figure 1 A cross-section of the inventive frame-type centering device 9 is shown before it is installed in a power semiconductor module. The centering device 9 consists of two identical split bodies 1 . These partial bodies, preferably made of plastic, have lugs 2 which prevent the first flat metal body 12 , a molybdenum disc, from falling out of the connection of the centering device. The semiconductor component 11 , which has a larger diameter than the two molybdenum disks 10 , 12 , is located on the central recess 3 of the centering device. The second molybdenum disk 10 is mounted loosely on the semiconductor component 11 before it is inserted into the power semiconductor module. By means of the centering device 9 , the components 10 , 11 , 12 forming the multilayer structure are centered with one another prior to assembly, and up to this point no materially bonded or materially constrained connections have necessarily taken place.
[0034] The distance between t...
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A power semiconductor module consists of a ground plate, at least one electrical connecting element separated from the ground plate by a first electrically isolating substrate and at least one overlying sandwich composed of a semiconductor element (11) sandwiched between two flat metal bodies (10, 12), preferably made of molybdenum. At least one pressure element and at least a second electrical connecting element and a housing are also included. <??>The sandwich is centralized on the electrical connection element using a centralizing frame (9) preferably composed of non-conducting plastic so that the second flat metal body (10) is secured against falling out using lugs. The semiconductor element is held by a groove which runs central and parallel to the surface of the centralizing frame (9). <??>The centralizing frame ensures that all the components of the sandwich are centralized in a pressure-free manner.
Description
technical field [0001] The invention relates to a power semiconductor module, which has a constant voltage of the internal structure under the most different temperature loads in the pressure contact of at least one power connection of the semiconductor components therein and is therefore suitable for the highest currents in the high power range. Safe operation under density. Background technique [0002] The invention describes a power semiconductor module, in particular a rectifier module, whose pressure contact design is suitable for very high power requirements. Pressure contact connections are sufficiently known as connection technology from the manufacturing technology of semiconductor modules. A kind of such power semiconductor module is known by DE 196 51 632 A1, and wherein realize pressure contact structure by means of telescopic screw, the present invention proceeds from this, constitutes the power as known by DE 33 08 661 similar disc box form The semiconductor...
Claims
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IPC IPC(8): H01L23/051H01L23/10H01L25/07H01L21/52H01L23/16
CPCH01L23/051H01L23/16H01L2924/0002H01L2924/00
Inventor 克里斯蒂安·克罗奈德
Owner SEMIKRON ELECTRONICS GMBH & CO KG