Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method

A production method and pre-doping technology, applied in the direction of single crystal growth, self-zone melting method, chemical instruments and methods, etc., can solve the problems affecting the development of zone melting single crystal industry, high production cost, long production cycle, etc., to achieve The effect of shortening the channel occupation time and irradiation doping processing production cycle, reducing accuracy and improving production capacity

Inactive Publication Date: 2006-06-21
TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD +1
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Problems solved by technology

For a long time, since zone melting silicon single crystals have traditionally been doped with neutron irradiation in large quantities, the production cycle is long, the production cost is high, and the production scale is limited by the production capacity of nuclear reactors, which greatly limits and Affected the industrial development of zone melting single crystal

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  • Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method
  • Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method
  • Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method

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Embodiment Construction

[0033] Specific embodiments are given below to further illustrate how the present invention is implemented.

[0034] 1. First carry out gas phase pre-doping, examples of the gas-phase pre-doping part are as follows:

[0035] 1) The main equipment and raw materials for the production of fused silicon single crystal in the vapor phase doping area:

[0036] Zone Furnace: Model: FZ-14-1, FZ-30; Doping Controller: Model: 0154E

[0037] Polysilicon: first-class material: base boron ≥ 9000.cm base phosphorus ≥ 900Ω.cm

[0038] CFZ material: base boron≥600Ω.cm base phosphorus≥400Ω.cm

[0039] 2) The specific steps of the production method of the molten silicon single crystal in the gas phase pre-doped region:

[0040] (1) Furnace installation, evacuation, and argon filling:

[0041] The operator cleans the furnace chamber and coil, reflector and crystal holder with a vacuum cleaner, and adjusts the level of the coil and reflector. Remove the polycrystalline rod from the c...

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Abstract

The invention discloses a method for producing a zone-melting silicon single crystal combined with gas-phase pre-doping and neutron irradiation doping. 2) Silicon rod preheating; (3) chemical material; (4) doping; (5) welding seed crystal; (6) seeding; (7) growing thin neck; (8) shouldering; (9) equal diameter Growth; (10) ending and breaking; (11) stop gas; (12) stop and dismantle the furnace. 2. Neutron irradiation doping: the silicon single crystal produced by gas phase pre-doping is then subjected to neutron irradiation doping, (1) calculation of neutron irradiation doping fluence; (2) neutron irradiation Device design; (3) selection of neutron irradiation doping irradiation conditions; (4) control of neutron irradiation doping irradiation conditions; the present invention has the following obvious effects: (1) the radiation of nuclear reactor is doubled; According to the output, (2) Effectively reduce the lattice damage of neutron radiation doping to silicon single crystal.

Description

technical field [0001] The present invention relates to a method for producing a zone fused silicon single crystal, in particular to a method for producing a zone fused silicon single crystal which combines gas phase pre-doping and neutron irradiation doping. Background technique [0002] As we all know, the core of modern information technology and modern electronic technology is semiconductor technology, and semiconductor silicon single crystal material is the most important semiconductor material (according to statistics in 2000: semiconductor silicon single crystal material accounts for more than 95% of global semiconductor materials). In the production process of semiconductor silicon single crystal, the Czochralski method or the zone melting method are mainly used for production. Among them, the silicon single crystal produced by the Czochralski method causes thermal instability and reversibility of resistivity due to the high oxygen content in the single crystal. The...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B13/12C30B31/20
Inventor 沈浩平郭丽华高树良李颖辉刘为刚王振东刘凤林赵喜君
Owner TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
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