Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method

A production method and pre-doping technology, applied in the direction of single crystal growth, self-zone melting method, chemical instruments and methods, etc., can solve the problems affecting the development of the zone melting single crystal industry, long production cycle, high production cost, etc., and achieve shortening Channel occupancy time and radiation doping processing production cycle, the effect of increasing production capacity and reducing accuracy

Inactive Publication Date: 2003-11-12
TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD +1
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AI Technical Summary

Problems solved by technology

For a long time, since zone melting silicon single crystals have traditionally been doped with neutron irradiation in large quantities, the production cycle is long, the production cost is high, and the production scale is limited by the production capacity of nuclear reactors, which greatly limits and Affected the industrial development of zone melting single crystal

Method used

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  • Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method
  • Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method
  • Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method

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Embodiment Construction

[0033] Specific examples are given below to further illustrate how the present invention is realized.

[0034] 1. First carry out gas phase pre-doping, the example of gas phase pre-doping part is as follows:

[0035] 1) The main equipment and raw materials for the production of molten silicon single crystal in the gas phase doping area:

[0036] Zone Furnace: Model: FZ-14-1, FZ-30; Doping Controller: Model: 0154E

[0037] Polysilicon: primary material: base boron ≥ 9000Ω·cm base phosphorus ≥ 900Ω·cm

[0038] CFZ material: base boron≥600Ω·cm, base phosphorus≥400Ω·cm

[0039] 2) The specific steps of the production method of the gas-phase pre-doped region molten silicon single crystal:

[0040] (1) Furnace loading, evacuation, and argon filling:

[0041] The operator cleans the furnace chamber and coils, reflectors and crystal holders with a vacuum cleaner. Remove the polycrystalline rod from the clean vinyl film and secure the polycrystalline rod in the crystal hol...

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Abstract

The zone molten-silicon monocrystal production method by utilizing combination of gas phase predope and neutron radiation doping process includes 1. gas phase predoping; (1) charging furnace, vacuum-pumping and charging argon gas; (2) preheating silicon rod; (3) smelting material; (4) doping; (5) joining seed crystal by fusion; (6) leading crystal; (7) growing thin neck; (8) shouldering; (9) isodiametric growing; (10) ending and draw-breaking; (11) stopping gas; and (12) stopping furnace and removing furnace, and 2. neutron radiation doping; (1) calculating neutron radiation doping dose; (2) designing neutron radiation equipment; (3) selecting radiation condition; and (4) condition control. Said invention has the obvious effect.

Description

technical field [0001] The invention relates to a method for producing a zone-melting silicon single crystal, in particular to a production method for a zone-melting silicon single crystal which combines vapor phase pre-doping and neutron irradiation doping. Background technique [0002] As we all know, the core of modern information technology and modern electronic technology is semiconductor technology, and semiconductor silicon single crystal material is the most important semiconductor material (according to statistics in 2000: semiconductor silicon single crystal material accounts for more than 95% of global semiconductor materials). In the production process of semiconductor silicon single crystal, the Czochralski method or zone melting method is mainly used for production. Among them, the silicon single crystal produced by the Czochralski method has thermal instability and reversibility of the resistivity due to the high oxygen content in the single crystal, which cau...

Claims

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Application Information

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IPC IPC(8): C30B13/12C30B31/20
Inventor 沈浩平郭丽华高树良李颖辉刘为刚王振东刘凤林赵喜君
Owner TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
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