Semiconductor structure and forming method thereof

Abstract

The invention provides a semiconductor structure and a forming method thereof. The forming method comprises the steps: a base is provided, wherein the base comprises a substrate, fin parts protrudingout of the substrate, a gate structure stretching across the fin parts and source and drain epitaxial layers located in the fin parts on the two sides of the gate structure; a protective layer is formed on the substrate exposed out of the gate structure, wherein the protective layer at least covers part of the side wall of the source and drain epitaxial layers and exposes the top of the source anddrain epitaxial layer; and ion doping processing is carried out on the source and drain epitaxial layer exposed out of the protective layer. According to the embodiment of the invention, the protective layer can be used in the step of carrying out ion doping processing on the source and drain epitaxial layer, the side wall of the source and drain epitaxial layer is protected, so that the latticedamage of the source and drain epitaxial layer is reduced, the stress release problem of the source and drain epitaxial layer is correspondingly improved, the carrier mobility is further improved, andthe electrical performance of the semiconductor structure is further improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the gradual development of semiconductor process technology, the development trend of semiconductor process nodes following Moore's Law continues to decrease. In order to adapt to the reduction of process nodes, the channel length of MOSFET field effect transistors is also continuously shortened accordingly. However, with the shortening of the channel length of the device, the distance between the source and the drain of the device is also shortened, so the control ability of the gate to the channel becomes worse, and the difficulty of pinching off the channel by the gate voltage also decreases. The larger and larger the subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) is more likely to occur. [0003] Therefore, in ord...

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Problems solved by technology

However, as the channel length of the device shortens, the distance between the source and the drain of the device also shortens, so the control ability of the gate to the channel becomes worse, and the difficulty of pinching off the channel by the gate voltage also increases. It is getting bigger and bigger, making subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) more likely to occur

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