Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for mfg. Y-direction antomatic oriented mask ROM

A read-only memory and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as inability to improve memory cell margins, avoid tailing bit effects, prevent ion diffusion, and improve storage. Effect of Cell Margin

Inactive Publication Date: 2006-11-22
MACRONIX INT CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, it will not be possible to increase the storage unit margin in the memory component (Cell Window)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for mfg. Y-direction antomatic oriented mask ROM
  • Method for mfg. Y-direction antomatic oriented mask ROM
  • Method for mfg. Y-direction antomatic oriented mask ROM

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] figure 2 , which is a top view of a Y-direction self-aligned mask ROM device according to a preferred embodiment of the present invention; Figure 3A to Figure 3I As shown, it is a schematic cross-sectional view of the manufacturing process of a Y-direction self-aligned mask read-only memory according to a preferred embodiment of the present invention, which is figure 2 The cross-sectional schematic diagram of X-X' and Y-Y' in the middle.

[0038] Please refer to figure 2 and Figure 3A , Figure 3A for figure 2 The cross-sectional schematic diagram of X-X' in the middle. The Y-direction self-aligned mask read-only memory manufacturing method of the present invention firstly provides a substrate 200, wherein the substrate 200 has a memory cell area 300 and a peripheral circuit area 302, and an isolation circuit has been formed in the peripheral circuit area 302 structure 201 to define an active area 204 . Here, the isolation structure 201 may be a field oxida...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for manufacturing a Y-direction self-aligned mask-type read-only memory. The method firstly forms a buried bit line in a substrate, and then forms a gate oxide layer on the surface of the substrate. Next, form a strip-shaped silicon nitride layer on the gate oxide layer in a direction perpendicular to the buried bit line, and then form a patterned photoresist layer on the gate oxide layer and the strip-shaped silicon nitride layer, and use this light The resistance layer is a mask, and a code implantation step is performed to form several code storage units. After removing the photoresist layer, a polysilicon layer is formed on the gate oxide layer and the striped silicon nitride layer, and the polysilicon layer is etched back until the striped silicon nitride layer is exposed. Finally, the silicon nitride layer is removed.

Description

technical field [0001] The present invention relates to a method for manufacturing a memory component, and in particular to a method for manufacturing a Y-direction self-aligned mask read-only memory (Mask ROM). Background technique [0002] Masked ROM is the most basic type of ROM. It mainly adjusts its threshold voltage (Threshold Voltage) through the ion implantation process, so as to achieve the purpose of controlling the memory cell to be turned on (On) or turned off (Off). When the product of the mask-type ROM is changed, its manufacturing process does not need to be greatly modified, but only a set of photomasks used is changed, so it is very suitable for mass production, and even part of the manufacturing process can be made first. When the finished semi-finished products are ordered to the factory, these semi-finished products can be quickly programmed (Programming), which can effectively shorten the delivery time. [0003] Figure 1A to Figure 1C As shown, it is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8246H10B20/00
Inventor 潘仁泉
Owner MACRONIX INT CO LTD