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Producing method and mechanical property testing method for metal film microbridge
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A metal thin film and a manufacturing method technology, which are applied in separation methods, chemical instruments and methods, manufacturing microstructure devices, etc., can solve the problems that metal thin films are difficult to withstand chemical solution wetting, difficult to prepare microbridge structures, etc., to avoid Fixed problem, retained effect of residual stress
Inactive Publication Date: 2007-01-10
SHANGHAI JIAOTONG UNIV
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Problems solved by technology
For metal thin film materials, it is difficult to prepare a micro-bridge structure. The main reason is that it is difficult to directly form a micro-bridge structure with a film thickness of several microns by dry etching or wet etching of metal thin films, and the process of etching silicon for a long time Medium metal thin films are difficult to withstand the wetting of chemical solutions
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Embodiment
[0033] Embodiment, specifically as follows:
[0034] 1. Wash the double-sided oxidized silicon wafer on one side (called A side) and cast the positive resist AZ4000 series, the thickness of the photoresist is 5 μm, and dry the photoresist at a temperature of 95 ° C for 1 hours; exposure and development;
[0035] 2. Wet etch silicon dioxide, remove photoresist, and obtain double-sided overlay alignment symbols and silicon etching windows;
[0036] 3. Deposit the Cr / M bottom layer on the other side of the silicon wafer (called the B side), with a thickness of 100nm, and the following processes are all carried out on the B side;
[0037] 4. Shake the positive resist, the thickness of the photoresist is 10 μm, dry the substrate substrate, the drying temperature is 95 ° C, and the drying time is 1 hour; expose and develop to obtain the micro-bridge photoresist mask pattern;
[0038] 5. Electroplating M film microbridge, such as Ni film thickness is 3.7μm;
[0039] 6. Remove the ph...
specific example
[0049] Concrete example: adopt Cr (30nm) to be protective film, bead size is 1000 μ m * 80 μ m * 50 μ m, the size, Young's modulus and residual stress of the electroplated metal film microbridge obtained by the present invention are as follows:
[0057] According to the present invention, the average Young's modulus and residual stress of the Cu film are 115.2GPa and 19.3MPa respectively; the Young's modulus and average residual stress of the electroplated Ni film are 190GPa and 175MPa respectively. The Young's modulus of the NiFe film is about 200G...
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Abstract
The invention is a manufacturing method for metal film mini bridge and testing method for its mechanical characters. The manufacturing method is: using photoetching and etching to form photoetching aiming symbol and silicon etching window, the symbol is aiming symbol for exposal. Then uses sputtering method to produce the bottom layer, forms plated metal film mini bride photoetching glue image on the silicon plate, then uses plating technology to plate the metal film mini bridge, and uses physical etching to eliminate the bottom layer, finally protects it with clamp, and uses humid etching technology for silicon to eliminate the lining material under the mini bridge. The testing method: places a hard pressing bar in the center of the bridge, ensures to apply a linear load in the center of the bridge, uses nanometer pressing meter to carry on curve measurement of bridge loading and unloading state, the pressure head is Berkovich triangular pyramid type, analyzes the curve with mini bridge theory model, acquires the young's modulus and residual stress.
Description
technical field [0001] The invention relates to a method for manufacturing a metal thin film microbridge and a method for testing its mechanical properties, which are used in the technical field of metal thin films. Background technique [0002] Microelectromechanical systems (MEMS) materials often exist in the form of thin films, based on a certain substrate or composite materials with other materials, and its properties have an extremely important impact on MEMS devices and microstructures. For thin film materials with a thickness of only a few microns, the mechanical properties of thin film materials will be different from those of bulk materials due to size effects, processing methods, and special microstructures. However, there is no standard test method that can measure the mechanical properties of MEMS materials very accurately. [0003] Early methods for measuring the mechanical properties of thin film materials include nano-indentation method, substrate bending met...
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