Film thickness monitoring method and substrate temperature detecting method

Abstract

The film thickness monitoring method of the present invention viewed from one side is configured as follows. When a thin film is formed on a substrate in the reaction furnace using a CVD (Chemical Vapor Deposition) apparatus having a reaction furnace, the radiation light from the reaction furnace is measured outside the reaction furnace to obtain the emissivity of the radiation light. The relationship between the change and the film thickness change of the thin film formed on the above-mentioned substrate. When a thin film is formed on a substrate using the CVD apparatus after obtaining the relationship between the change in emissivity and the change in film thickness, the change in emissivity of the radiated light is measured. The film thickness of the thin film formed on the substrate in the reaction furnace is estimated from the measured change in the emissivity of the radiated light based on the obtained relationship between the emissivity change and the film thickness change.

Description

Technical field [0001] The invention relates to a film thickness monitoring method for monitoring the film thickness on a substrate in a reaction furnace of a CVD device on site, and a film thickness control adopting a method for measuring the substrate temperature in a diffusion furnace. Background technique [0002] Next, the conventional film thickness monitoring method (first prior art) for monitoring the film thickness of the film formed in the furnace of the CVD apparatus on site will be described. [0003] In the past, in the manufacture of semiconductor devices, a CVD (Chemical Water Vapor Deposition) device was used to form a thin film on a semiconductor substrate (sheet). [0004] However, a high-temperature thermal process is required in the CVD apparatus, and when a thin film is formed by the CVD apparatus, there is no method for monitoring the film thickness on site. Therefore, under the current situation, the film thickness is generally measured by the following met...

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Problems solved by technology

[0007] However, in the above-mentioned first prior art, the film thickness cannot be known on-site during film formation, but the film thickness can only be confirmed after film formation.

For this reason, even if a film thickness different from the target film thickness is formed for some reason during film formation, the formation of a different film thickness cannot be avoided in advance.

[0008] In addition, in the above-mentioned second prior art, in the batch diffusion furnace generally used for the formation of the gate oxide film, since dummy substrates are provided above and below the substrate for manufacturing semiconductor devices, there is no actual Possibility of extracting radiated light from the substrate through glass fibers

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